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| ISO LINK 6 OLI 249 Radiation Tolerant Phototransistor Optocoupler For Hybrid Assembly .100".01" 5 4 Minimum Bonding pad size .005"X .010", 6 places 6 CATHODE 5 BASE 4 EMITTER Device color code* ANODE COLLECTOR 1 2 3 Max. .065" .110".01" .030" .006" Color Code - BLACK 1 3 SCHEMATIC PACKAGE OUTLINE Features Current transfer ratio guaranteed over 1500 Vdc electrical isolation Small foot print for hybrid device More Radiation tolerant than 4N49 4 High current transfer ratio at low input CTR comparable to darlington output Custom package available Call Factory 4 -55C to +100C ambient temp. range Description The OLI 249 is designed especially for hybrid application requiring optical isolation with high current transfer ratio and low saturation Vce. Each OLI 249 consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in a miniature custom ceramic package. The very low input current makes the OLI 249 well suited for direct CMOS to LSTTL / TTL interfaces. Electrical parameters are similar to the JEDEC registered 4N49 optocoupler but with much better CTR degradation characteristics due to radiation exposure. Device mounting is achieved by standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility . Special electrical parametric selections are available on request. current - 200% at IF =2mA over temperature High reliability and rugged construction but with low saturation VCE = 0.15v typ. Similar to 4N4X type optocouplers NOTES: 1. Measured between pins 1 and 6 shorted together and pins 2,3,4,and 5 shorted together. TA = 25C and duration = 1 second. 2. Derate linearly at 3.0 mW / C above 25 C 3. Value applies for Pw 1 S, PRR 300 pps. 4. Contact factory for more information Absolute Maximum Ratings Coupled Input to Output Isolation Voltage1 Storage Temperature Range Operation Temperature Range Mounting Temperature Range ( 3 minutes max. ) Input Diode Average Input Current Peak Forward Current ( 1mS duration ) Reverse Voltage Power Dissipation Output Detector Collector - Emitter Voltage Emitter - Collector Voltage Collector - Base Voltage Power Dissipation 1500 Vdc -65C to +150C -55C to +125C 240C 40 mA 60 mA 3.0 V 70 mW 40 V 7V 45 V 200 mW3 ELECTRICAL CHARACTERISTIC ( TA = 25 C, Unless Otherwise Specified ) Parameter On-State Collector Current Symbol IC (ON) Min 2.0 2.8 2.0 30 Max 12 Units mA mA mA A Test Conditions I F = 1 mA, VCE = 5.0V I F = 2 mA, VCE = 5.0V, TA = -55C I F = 2 mA, VCE = 5.0V, TA = 100C I F = 10 mA, VCB = 5.0V I F = 2mA, IC =2.0mA Fig. Note 2,3 On-State Coll.-Base Current Saturation Voltage Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Off-State Leakage Current Collector to Emitter Collector to Base Input Forward Voltage ICB(ON) VCE(SAT) 0.3 V BVCEO BVCBO BVEBO ICE(OFF) ICB(OFF) VF 40 45 7 100 100 10 1.8 1.4 1.2 2.2 1.8 1.6 100 10 11 5 25 25 V V V nA A nA V V V A pF S S I CE = 1 mA I CB = 100 A I EB = 100 A VCE = 20V VCE = 20V, TA =100 C VCB = 20V I F = 10mA, TA = -55C I F = 10mA I F = 10mA, TA = 100C V R = 2.0V V I-O = 1000Vdc V I-O = 0V, f = 1 MHz VCC = 10V, RL = 100 I F = 5mA 4 1 1 1 1 1 Input Reverse Current Input to Output Resistance Input to Output Capacitance Rise Time Fall Time IR rI-O c I-O tr tf TYPICAL PERFORMANCE CURVES 100 9 NORMALIZED COLLECTOR CURRENT I F - FORWARD CURRENT ( mA ) 8 7 6 5 4 3 2 1 0 0 1 NORMALIZED TO: I F = 1 mA VCE = 5V 125 C 25 C -55 C 10 TA = 25 C 1 .1 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2 3 4 5 6 7 8 9 10 V F - FORWARD VOLTAGE ( V ) I F = FORWARD CURRENT ( mA ) Fig. 1 - Diode Forward Characteristics 1.8 1.6 NORMALIZED TO: Fig. 2 - Normalized Ic vs. I F NORMALIZED CTRCE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 VCE = 5V TA = 25 C I F = 1 mA -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Fig. 3 - Normalized CTR vs. Temperature INPUT IF 0 VCC Pulse Width = 100S Duty Cycle = 1% IF VOUT 0 90 % 10 % tr tf 100 RL VOUT Fig. 4 - Switching Test Circuit |
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