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| PD411PI PD411PI s Features 1. High sensitivity (TYP. 1.0A/W at p=960 nm) 2. High speed response ( tr,tf:TYP. 200ns at RL= 1k ) Compact Package Type Photodiode with Condensing Lens s Outline Dimensions Detector center (Unit : mm) 4.0 0.2 R1.75 0.1 2.0 1.5 0.5 0.2 2.4 Rest of gate (2.5 ) MAX. 0.4 5.0 0.2 8 8 8 Transparent epoxy resin 0.8 1. Optoelectronic switches 2.54 g MIN. 0.5 17.15 + - 0.45 + - 0.2 0.1 1.5 1.0 s Applications 2.15 8 0.2 0.1 0.4 + - 1 2 3.75 0.2 1 Anode 2 Cathode * Tolerance : 0.15 * ( ) : Reference dimensions g Dimension at lead root 8 1 8 2 8 8 s Absolute Maximum Ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol Rating VR 32 P 150 - 25 to + 85 T opr - 40 to +100 T stg 260 T sol (Ta=25C) Unit V mW C C C Soldering area *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 2.15mm PD411PI s Electro-optical Characteristics Parameter Shortcircuit current Shortcircuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Response time Half intensity angle Rise Time Fall Time Symbol Isc T Id T Ct p K tr tf Conditions *2 EV = 100 lx *2 (Ta=25 C) MIN. 5.0 TYP. 7.5 0.2 0.5 3.5 20 960 1.0 200 200 45 MAX. 9.0 10 5.0 35 Unit A % /C nA times/10C pF nm A/W ns EV = 100 lx VR= 10V, Ee= 0 VR= 10V, Ee= 0 VR= 3V, f= 1MHZ l = 960nm RL= 1k VR= 10V *2 E V : Illuminance by CIE standard light source A (tungsten lamp) Fig. 1 Power Dissipation vs. Ambient Temperature 200 Fig. 2 Spectral Sensitivity 100 90 80 Ta=25C Power dissipation P (mW) Relative sensitivity (%) 0 25 50 75 85 100 150 70 60 50 40 30 20 10 100 50 0 - 25 0 300 400 500 600 700 800 900 1000 1100 Ambient temperature T a ( C) Wavelength (nm) PD411PI Fig. 3 Shortcircuit Current vs. Illuminance 1000 Ta=25C Fig. 4 Dark Current vs. Ambient Temperature 10 - 6 VR =10V 10 - 7 ( A) 100 (A) Dark current I 1 10 100 1000 10000 10 d Shortcircuit current I SC 10 - 8 10 - 9 1 10- 10 10- 11 10- 12 - 25 0.1 0.01 0 25 50 75 100 Illuminance E V (lx) Ambient temperature T a (C) Fig. 5 Dark Current vs. Reverse Voltage 10- 7 5 2 Ta= 25C Fig. 6 Terminal Capacitance vs. Reverse Voltage 60 f = 1MHz T a = 25C Dark current I d (A ) 10- 8 5 2 109 Terminal capacitance C t ( pF ) 5 10 -1 2 50 40 30 5 2 1010 20 5 2 1011 10 0 0.05 0.1 0.2 5 10 -2 2 5 1 2 5 10 2 5 0.5 1 2 5 10 20 50 Reverse voltage V R (V) Reverse voltage V R (V) Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538) 160 Test circuit 140 120 GL537/GL538 PD411Pl A Fig. 8 Radiation Diagram - 20 -10 0 100 - 30 80 + 10 (Ta = 25C ) + 20 + 30 Relative sensitivity (%) Relative output (%) 100 80 - 40 60 + 40 - 50 60 40 20 0 - 25 - 60 40 + 50 + 60 ( Fix PD and GL at position so that distance between them may be I SC =100 A at I F =20mA and Ta=25C. 0 25 50 75 ) 100 20 - 70 - 80 - 90 0 + 70 + 80 + 90 Ambient temperature T a (C) Angular displacement PD411PI Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) 100 GL538 Fig. 10 Response Time vs. Load Resistance 102 5 2 VR= 10V Ta= 25C ,t f ( m s ) 101 5 2 100 5 2 10 - 1 5 2 Relative output (%) 10 GL537 1 0.1 10 IF = 20mA T a = 25C -4 Response time t r 10 -3 10 -2 10 -1 10 - 2 10 2 5 10 2 2 5 10 3 2 5 10 4 2 5 105 Distance between emitter and detector d (mm) Load resistance R L ( ) Test Circuit for Response Time Semiconductor laser IOUT= 0.1mA PD411PI + Output RL 10V Input 90 % Output tr tf 10 % Pulse generator q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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