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| IGBT MODULE CIRCUIT Dual 100A 1200V OUTLINE DRAWING PDMB100B12C 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB100B12C 1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 3 2 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG= 10 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 8300 0.25 0.40 0.25 0.80 Max. 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 100 200 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=200A/s Min. - Max. 2.4 0.3 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.24 0.42 PDMB100B12C Fig.1- Output Characteristics (Typical) 200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 IC=50A 200A VGE=20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 100A Collector Current I C (A) 150 9V 100 8V 50 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 800 700 600 500 400 16 IC=50A 200A Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=6 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=600V 300 6 400V 200 4 200V 100 0 0 150 300 450 600 750 2 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 1.6 Fig.6- Collector Current vs. Switching Time (Typical) VCC=600V RG=10 VGE=15V TC=25 VGE=0V f=1MHZ TC=25 Cies 1.4 1.2 Switching Time t (s) Capacitance C (pF) 5000 2000 1000 500 200 1 0.8 0.6 0.4 tOFF Coes tf Cres 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0 tON tr 0 25 50 75 100 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PDMB100B12C Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 (Typical) 200 VCC=600V IC=100A VGE=15V TC=25 TC=25 TC=125 toff ton tr 2 1 tf 0.5 Forward Current I F (A) 200 150 Switching Time t (s) 100 0.2 0.1 0.05 50 5 10 20 50 100 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 100 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=100A TC=25 trr 200 RG=10 VGE=15V TC125 50 Collector Current I C (A) 200 300 400 500 600 100 50 20 10 5 2 1 0.5 20 10 5 IRrM 2 1 0 100 0.2 0.1 0 400 800 1200 1600 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 1 (/W) 5x10 -1 FRD IGBT Transient Thermal Impedance Rth (J-C) 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25 1 Shot Pulse 2x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) |
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