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| QS043-402-203922/5 94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 1 48.0 16.0 14.0 2 3 2-O6.5 7 6 5(E1) 4(G1) 5 4 3-M5 23.0 23.0 17.0 14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5 7 30 +1.0 - 0 .5 LABEL 4 18.0 4 Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm) , . . ise urn-on all urn-off ime ime ime ime = 600V, = 0V = 20V,= 0V = 200A,= 15V = 5V,= 200mA = 10V,= 0V,= 1MH = = = = 300V 1.5 3.6 15V . . . . 10,000 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime = 200A,= 0V = 200A,= -10V i/t= 400A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 QS043-402-203923/5 Fig.1- Output Characteristics (Typical) 400 Fig.2- Output Characteristics (Typical) TC=25C 400 TC=125C VGE=20V 12V VGE=20V 350 300 250 200 150 100 50 0 12V 11V 15V 350 300 250 200 150 100 15V 11V Collector Current I C (A) Collector Current I C (A) 10V 10V 9V 9V 8V 8V 50 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=100A 200A 400A IC=100A 200A 400A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 30000 100000 RL=1.5 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 10000 VCE=300V 200V 100V 8 6 4 2 0 800 3000 Coes Cres 1000 300 0 200 400 600 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-203924/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=3.6 VGE=15V TC=25C Resistive Load 2 VCC=300V IC=200A VGE=15V TC=25C Resistive Load Switching Time t (s) Switching Time t (s) 0.6 1 0.5 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 50 100 150 200 250 300 0.02 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (s) Switching Time t (s) tOFF tON VCC=300V RG=3.6 VGE=15V TC=125C Inductive Load 2 1 0.5 VCC=300V IC=200A VGE=15V TC=125C Inductive Load 0.1 tf tr(Ic) toff ton tf 0.2 0.1 0.05 0.01 tr(IC ) 0.001 0 50 100 150 200 250 300 0.02 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 20 Fig.12- Series Gate Impedance vs. Switching Loss 300 Switching Loss ESW (mJ/Pulse) EOFF 12 Switching Loss ESW (mJ/Pulse) 16 VCC=300V RG=3.6 VGE=15V TC=125C Inductive Load 100 VCC=300V IC=200A VGE=15V TC=125C Inductive Load EON 30 EOFF EON 8 10 ERR 4 ERR 3 0 0 50 100 150 200 250 300 1 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-203925/5 400 350 300 250 200 150 100 50 0 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) TC=25C TC=125C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 IF=200A TC=25C TC=125C trr Forward Current I F (A) 200 100 50 IRrM 20 0 1 2 3 4 10 0 200 400 600 800 1000 1200 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 1000 500 200 RG=3.6 , VGE=15V, TC<125C Collector Current I C (A) 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) 1 FRD 3x10 -1 1x10 -1 IGBT 3x10 -2 1x10 -2 3x10 -3 1x10 -3 3x10 -4 10 -5 TC=25C 1 Shot Pulse 10-4 10-3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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