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Datasheet File OCR Text: |
TENTATIVE IGBT MODULE CIRCUIT Single 1200A 1200V OUTLINE DRAWING PHMB1200B12 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 1,200g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR M4 M8 PHMB1200B12 1200 +/ - 20 1200 2400 5600 -40 to +150 -40 to +125 2500 3 1.4 10.5 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 100000 0.25 0.40 0.25 1.00 Max. 24 1.0 2.4 8.0 0.45 0.70 0.35 1.50 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 1200 2400 Unit A Typ. 1.9 0.4 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=1200A,VGE=0V IF=1200A,VGE=-10V,di/dt=2400A/s Min. - Max. 2.4 0.5 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.022 0.043 TENTATIVE PHMB1200B12 TENTATIVE PHMB1200B12 |
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