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PMN38EN
N-channel TrenchMOS logic level FET
Rev. 01 -- 13 January 2006 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level threshold s Low threshold voltage s Very fast switching s Surface-mounted package
1.3 Applications
s Battery powered motor control s Load switch in notebook computers s High-speed switch in set top box power s Driver FET in DC-to-DC converters supplies
1.4 Quick reference data
s VDS 30 V s RDSon 38 m s ID 5.4 A s Ptot 1.75 W
2. Pinning information
Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S)
1 2 3
mbb076
Simplified outline
6 5 4
Symbol
D
G S
SOT457 (TSOP6)
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2: Ordering information Package Name PMN38EN TSOP6 Description plastic surface mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; VGS = 10 V; see Figure 2 and 3 Tsp = 100 C; VGS = 10 V; see Figure 2 Tsp = 25 C; pulsed; tp 10 s; see Figure 3 Tsp = 25 C; see Figure 1 Conditions 25 C Tj 150 C Min -55 -55 Max 30 20 5.4 3.4 21.6 1.75 +150 +150 1.45 5.80 Unit V V A A A W C C A A
Source-drain diode
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
2 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 Tsp (C) 200
P tot P der = ------------------------ x 100 % P
tot ( 25 C )
ID I der = -------------------- x 100 % I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature
102 ID (A) 10 Limit RDSon = VDS / ID
Fig 2. Normalized continuous drain current as a function of solder point temperature
003aab227
tp = 10 s 100 s
1 DC 10-1
1 ms 10 ms 100 ms
10-2 10-1
1
10
VDS (V)
102
Tsp = 25 C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
3 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 4: Rth(j-sp)
[1]
Thermal characteristics Conditions see Figure 4
[1]
Symbol Parameter thermal resistance from junction to solder point
Min -
Typ -
Max 70
Unit K/W
Mounted on a metal clad board
102
03aj69
Zth(j-sp) (K/W)
= 0.5
0.2 10 0.1 0.05 0.02 single pulse 1 10-4 10-3 10-2 10-1
tp T t P = tp T
1
10
tp (s)
102
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
4 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = 30 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 3 A; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 2.8 A; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 1.7 A; VGS = 0 V; see Figure 13 VDS = 15 V; RL = 12 ; VGS = 4.5 V; RG = 6 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 14 ID = 5 A; VDS = 15 V; VGS = 4.5 V; see Figure 11 and 12 6.1 1.7 2.35 495 100 70 14 19 28 16 0.75 1.2 nC nC nC pF pF pF ns ns ns ns V 31 49.6 38 38 60.9 46 m m m 0.01 10 1.0 10 100 A A nA 1 0.6 1.5 2 2.2 V V V 30 27 V V Conditions Min Typ Max Unit
Source-drain diode
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
5 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
20 ID (A) 15
003aab228
10 6 4.5
3.9 3.5
60 RDSon (m)
003aab229
Tj = 25 C
VGS (V) = 3.1
3.5
3.9 3.1 40 4.5 6 10
10
2.9 2.7
20
5
2.5 2.3 VGS (V) = 2.1
0 0 0.2 0.4 0.6 0.8 VDS (V) 1
0 0 5 10 15 ID (A) 20
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
03aj73
Fig 6. Drain-source on-state resistance as a function of drain current; typical values
03af18
20 ID (A) 15
2 a 1.5
10
1
5 Tj = 150 C 25 C
0.5
0 0 1 2 3 VGS (V) 4
0 -60
0
60
120
Tj (C)
180
Tj = 25 C and 150 C; VDS > ID x RDSon
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
6 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
2.5 VGS(th) (V) 2 max
03aa33
10-1 ID (A) 10-2
03aa36
1.5
typ
10-3 min typ max
1
min
10-4
0.5
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature
03aj76
Fig 10. Sub-threshold drain current as a function of gate-source voltage
10 ID = 5 A VGS Tj = 25 C (V) 8 VDS = 15 V
VDS ID VGS(pl)
6
4
VGS(th)
2
VGS QGS1 QGS2 QGD QG(tot)
003aaa508
0 0 5 10 QG (nC) 15
QGS
ID = 5 A; VDS = 15 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Gate charge waveform definitions
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
7 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
20 IS (A) 15 VGS = 0 V
03aj74
103
03aj75
C (pF)
Ciss
10
102
Coss Crss
150 C 5
Tj = 25 C
0 0 0.5 1 VSD (V) 1.5
10 10-1
1
10
VDS (V)
102
Tj = 25 C and 150 C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain voltage; typical values
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
8 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
7. Package outline
Plastic surface mounted package (TSOP6); 6 leads
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC JEITA SC-74
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 05-11-07
Fig 15. Package outline SOT457 (TSOP6)
PMN38EN_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
9 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
8. Revision history
Table 6: Revision history Release date 20060113 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID PMN38EN_1
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
10 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
9. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PMN38EN_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 13 January 2006
11 of 12
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 January 2006 Document number: PMN38EN_1
Published in The Netherlands

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