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| QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.276 (7.0) MIN CATHODE 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) 0.019 (0.5) 0.012 (0.3) FEATURES * T-3/4 (2mm) Surface Mount Package * Tape & Reel Option (See Tape & Reel Specifications) * Lead Form Options: Gullwing, Yoke, Z-Bend 0.055 (1.4) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) * Narrow Emission Angle, 24 * Wavelength = 940 nm, GaAs * Pink Tinted Lens * Matched Photosensor: QSB363 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) SCHEMATIC NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. * High Radiant Intensity ANODE CATHODE ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature Reverse Voltage Power Dissipation(1) (Flow)(2,3) Continuous Forward Current (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Units C C C C mA V mW NOTES 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip at 1/16" (1.6mm) from housing ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) MIN. TYP. MAX. UNITS SYMBOL Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA, tP = 20 ms VR = 5 V IF = 100 mA, tP = 20 ms IF = 100 mA, tP = 20 ms !P " VF IR Ie tr tf -- -- -- -- 8 -- -- 940 12 -- -- -- 1 1 -- -- 1.6 100 -- -- -- nm Deg. V A mW/sr s s 1 of 4 100007C QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE TYPICAL PERFORMANCE CURVES Fig. 1 Maximum Forward Current vs. Temperature 200 Fig. 2 Relative Radiant Intensity vs. Wavelength 100 160 Relative Radiant Intensity (%) Forward Current IF (mA) IF = 20 mA TA = 25C 80 120 60 80 40 40 20 0 -25 0 25 50 75 85 100 0 880 900 920 940 960 980 1000 1020 1040 Ambient Temperature TA (C) Wavelengthl !#(nm) Fig. 3 Peak Emission Wavelength vs. Ambient Temperature Peak Emission Wavelength (nm) 980 500 Fig. 4 Forward Current vs. Forward Voltage 960 Forward Current IF (mA) 0 25 50 75 100 200 100 50 20 10 5 2 1 940 920 900 -25 Ambient Temperature TA (C) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 5 Relative Radiant Flux vs. Ambient Temperature 20 10 Forward Voltage VF (V) Relative Radiant Flux (%) Fig. 6 Relative Radiant Intensity vs. Angular Displacement 30 20 10 0 10 20 30 Relative Radiant Intensity 5 2 1 0.5 40 50 60 70 80 90 0.6 0.4 0.2 0 0.2 0.4 0.6 40 50 60 70 80 90 0.2 0.1 -25 0 25 50 75 100 Ambient Temperature TA (C) Ambient Temperature TA (C) 2 of 4 100007C SURFACE MOUNT OPTIONS T-3/4 PACKAGES GULL WING LEAD CONFIGURATION 0.166 (4.2) FEATURES * Three lead forming options: Gull Wing, Yoke and Z-Bend * Compatible with automatic placement equipment * Supplied on tape and reel or in bulk packaging 0.016 (0.4) * Compatible with vapor phase reflow solder processes 0.020 (0.51) ANODE 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.078 (2.0) 0.055 (1.4) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 0.005 (0.13) NOTES: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. YOKE LEAD CONFIGURATION Z-BEND LEAD CONFIGURATION 0.236 (6.0) 0.220 (5.6) 0.283 (7.2) 0.098 (2.5) 0.016 (0.4) 0.127 (3.25) 0.112 (2.85) 0.177 (4.5) 0.161 (4.1) 0.016 (0.4) ANODE 0.020 (0.5) 0.074 (1.9) 0.074 (1.9) 0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.087 (2.2) 0.071 (1.8) 0.020 (0.5) ANODE 0.087 (2.2) 0.071 (1.8) 0.055 (1.4) 0.024 (0.6) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.055 (1.4) 0.051 (1.3) 0.043 (1.1) 0.141 (3.6) 0.008 (0.2) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 3 of 4 100007C QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com (c) 2000 Fairchild Semiconductor Corporation 4 of 4 100007C |
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