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RB050L-40
Diodes
Schottky barrier diode
RB050L-40
Applications For high-frequency rectification For switching power supplies External dimensions (Units : mm)
1.50.2
Features 1) Compact power-mold type. (PMDS) 2) IO=3A guaranteed at this size. 3) Low IR. ( IR=16A Typ. )
CATHODE MARK
4.50.2
1.20.3
3
1
5
2
0.1 +0.02 -0.1
2.00.2 2.60.2
Construction Silicon epitaxial planar
ROHM : PMDS EIAJ : - JEDEC : SOD-106
1
,
2
***Date of manufacture EX. 1999 Dec. =9, C
Absolute maximum ratings (Ta = 25C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak surge current
2 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 3.0 70 125 -40~+125
Unit V V A A C C
Junction temperature Storage temperature
1 When mounted on an alumina board (82x30x1.0mm), 180 Half sine wave 2 60Hz, 1
Electrical characteristics (Ta = 25C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR j-a Thermal resistance j-a j-l Max. 0.55 0.50 1.0 90 120 25 Unit V V mA C/W C/W C/W IF=3.0A IF=1.5A VR=40V When mounted on an alumina board. When mounted on a glass epoxy board. When mounted on an alumina board. Conditions
5.00.3
RB050L-40
Diodes
Electrical characteristic curves (Ta = 25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
10
10,000
Ta=125C
1000
REVERSE CURRENT : IR (A)
FORWARD CURRENT : IF (A)
1,000
1
C
100
Ta=75C
Ta =75 C
=1
25C
25
100
100m
Ta=
10
Ta=25C
Ta
1
10m 0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
35
40
10 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward temperature characteristics
Fig. 2 Reverse temperature characteristics
Fig. 3 Capacitance between terminals characteristics
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
5.0
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
IF IO T D=Tp / T VR=VRM / 2
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
DC D=0.8
Tp
IF IO T D=Tp / T VR=VRM / 2
5.0
5.0
IF IO T D=Tp / T VR=VRM / 2
4.0
D=0.5
4.0
DC
Tp
4.0
Tp
DC D=0.8
3.0
sin wave D=0.3 D=0.2
3.0
3.0
D=0.5 sine
D=0.8
2.0
D=0.1 D=0.05
2.0
D=0.3
D=0.5 sine
D=0.2
2.0
D=0.3 D=0.2
1.0
1.0
D=0.1 D=0.05
1.0
D=0.1 D=0.05
0 0
25
50
75
100
125
0 0
25
50
75
100
125
0 0
25
50
75
100
125
LEAD TEMPERATURE : TL (C)
AMBIENT TEMPERATURE : Ta (C)
AMBIENT TEMPERATURE : Ta (C)
Fig. 4 Derating curve
Fig. 5 Derating curve (when mounted on a glass epoxy board)
Fig. 6 Derating curve (when mounted on an alumina board)
2.5
FORWARD POWER DISSIPATION : PF (W)
DC
1.00
REVERSE POWER DISSIPATION : PR (W)
VR
DC
2.0
D=0.3 sine D=0.2 D=0.5
D=0.8
0.80
Tj=TjMax. 0
D=0.05 D=0.1
1.5
D=0.1 D=0.05
0.60
Tp
VR
D=0.2 D=0.3 D=0.5 sine
1.0
IF
0.40
T Tj=TjMax. D=Tp / T
0.5
IO
Tp
0.20
D=0.8
T D=Tp / T Tj=TjMax.
0 0
1.0
2.0
3.0
4.0
5.0
0 0
5
10
15
20
25
30
35
40
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
REVERSE VOLTAGE : VR (V)
Fig. 7 Power dissipation characteristics
Fig. 8 Reverse power dissipation

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