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| RB095B-30 Diodes Schottky barrier diode RB095B-30 Applications General rectification External dimensions (Unit : mm) 6.50.2 5.10.2 0.1 0.05 1.50.3 2.30.2 0.1 0.50.1 Land size figure 6.0 Features 1) Power mold type. (CPD) 2) Low VF 3) High reliability 5.50.3 0.1 9.50.5 1.5 0.75 0.9 1 2 3 0.650.1 0.550.1 0.55 1.20.2 2.5 1.2 0.8 1.5 2.30.2 2.30.2 2.2 2-R0.3 1.05 1.74 2.0 0.5 CPD 2.3 2.3 Construction Silicon epitaxial planar 1.35 ROHM : CPD JEITA : SC-63 0.15 0.16 2.55 1 2 3 R0.45 Structure 0.95 24.5 0.5 Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 2.70.2 Absolute maximum ratings (Ta=25C) Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current *1 Forward current s urge peak 60Hz 1cyc *1 J unction tem perature S torage tem perature (*1) Per chip : Io/2 Sym bol VRM VR Io IFSM Tj Ts tg Lim its 35 30 6 35 150 -40 to +150 Unit V V A A Electrical characteristic (Ta=25C) Param eter Forward voltage Revers e current Therm al im pedance Sym bol VF IR jc Min. Typ. Max. 0.425 200 6.0 Unit V A /W IF =3.0A VR =30V junction to cas e Conditions 13.50.2 Rev.A 16.00.2 3.0 2.0 1.6 1.6 6.0 1/3 RB095B-30 Diodes Electrical characteristic curves 10 Ta=150 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 1000000 100000 Ta=25 Ta=75 Ta=-25 10000 Ta=125 10000 f=1MHz f=1MHz Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 1 1000 100 10 1 0.1 0.01 Ta=-25 Ta=25 1000 0.1 100 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 440 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25 IF=3A n=30pcs 200 180 160 140 120 100 80 60 40 20 0 AVE:41.0uA Ta=25 VR=30V n=30pcs 2000 1950 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 430 1900 1850 1800 1750 1700 1650 1600 1550 1500 Ta=25 f=1MHz VR=0V n=10pcs 420 AVE:402.0mV 410 AVE:1617.3pF 400 390 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP RESERVE trr(ns) RECOVERY TIME:trr(ns) 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 8.3ms 1cyc 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP Mounted on epoxy board AVE:19.3ns 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:63.0A 100 50 0 10 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 100 1000 100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IM=100mA IF=3A 5 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 300us 4 Sin(180) D=1/2 10 Rth(j-c) 1 DC 3 100 2 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.1 10 1000 0 0 5 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 15 TIME:t(s) Rth-t CHARACTERISTICS Rev.A 2/3 RB095B-30 Diodes 10 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T VR D=t/T VR=15V Tj=150 20 0A 0V Io t T VR D=t/T VR=15V Tj=150 8 REVERSE POWER DISSIPATION:PR (W) Sin(180) D=1/2 DC 15 DC D=1/2 5 Sin(180) 15 DC 10 D=1/2 5 6 4 2 0 0 10 Sin(180) 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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