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| RB160A60 Diodes Schottky barrier diode RB160A60 Applications General rectification Dimensions (Unit : mm) CATHODEBAND 0.60.1 3 Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low VF. 4) High ESD. 291 3.00.2 291 2.50.2 ROHM : MSR Manufacture Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Standard dimension value(mm) B C L1 H1 F L2 D T-31 52.41.5 +0.4 T-32 26.0 0 T-31 5.00.5 B T-31 5.00.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A1.2 E T-32 1/2A0.4 T-31 0.7 T-32 0.2 max. T-31 H1 6.00.5 T-32 T-31 H2 5.00.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. H1(6mm)BROWN Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak t=100s Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 1 60 150 -55 to +150 Unit V V A A (*1) Mounted on epoxy board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.4 20 Typ. 0.5 7.00 Max. 0.55 50 Unit V A kV Conditions IF=1.0A VR=60V C=100pF,R=1.5k, forward and reverse : 1 times Rev.B 1/3 RB160A60 Diodes Electrical characteristic curves 1 Ta=75 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125 0.1 Ta=25 Ta=-25 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 100 10 1 0.1 0.01 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 10 20 30 40 50 60 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 100 Ta=125 1000 f=1MHz 0.01 Ta=-25 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 530 FORWARD VOLTAGE:VF(mV) Ta=25 IF=1A n=30pcs 100 90 REVERSE CURRENT:IR(uA) 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:6.966uA Ta=25 VR=20V n=30pcs 100 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 70 60 50 40 30 20 10 0 Ct DISPERSION MAP AVE:37.9pF Ta=25 f=1MHz VR=10V n=10pcs 520 510 500 490 AVE:495.1mV 480 150 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 1cyc 8.3ms 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 Ifsm 8.3ms 8.3ms 1cyc 50 50 AVE:85.0A AVE:11.7ns 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 1.5 Rth(j-a) Rth(j-l) FORWARD POWER DISSIPATION:Pf(W) IF=0.5A IM=1mA 100 time(s) td=300us 1 Sin(180) 0.5 D=1/2 DC 100 Rth(j-c) 10 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2 Rev.B 2/3 RB160A60 Diodes 0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 2 T 1.5 D=1/2 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 Sin(180) DC 0A 0V t Io VR D=t/T VR=30V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 REVERSE POWER DISSIPATION:PR (W) 0.15 D=1/2 0.1 DC 0A 0V t DC Io VR D=t/T VR=30V Tj=125 2 T 1.5 D=1/2 1 0.05 0.5 Sin(180) 0 0 10 Sin(180) 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:6.90kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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