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RB411D Diodes Schottky barrier diode RB411D Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.05 (3) 2.80.2 1.60.1 0.2 1.0MIN. 0.150.06 0.1 0.95 0.8MIN. 00.1 0.30.6 SMD3 (2) 0.95 0.95 1.90.2 (1) 0.80.1 1.10.2 0.01 Construction Silicon epitaxial planar Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 8.00.2 3.20.1 3.20.1 4.00.1 1.05MIN 00.5 5.50.2 3.20.1 1.350.1 Absolute maximum ratings (Ta = 25C) Param eter R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current *1 Forward current s urge peak 60Hz 1cyc *1 J unction tem perature S torage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 20 500 3 125 -40 to +125 Unit V V mA A Electrical characteristics (Ta = 25C) Param eter Forwarad voltage Revers e current Capacitance between term inal Sym bol VF 1 VF 2 IR 1 Ct1 Min. Typ. 20 Max. 0.50 0.30 30 Unit V V A pF IF =500m A IF =10m A VR =10V VR =10V , f=1MHz Conditions Rev.B 2.4 0.4 0.1 2.90.2 Each lead has same dimension 1/3 RB411D Diodes Electrical characteristic curves (Ta = 25C) 1000 Ta=25 Ta=75 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 1000 Ta=75 10000 Ta=125 100 f=1MHz 100 Ta=25 10 10 Ta=-25 10 1 1 Ta=-25 0.1 0 100 200 300 400 500 0.1 0 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 430 Ta=25 IF=500mA n=30pcs 250 Ta=25 IF=10mA n=30pcs 20 18 REVERSE CURRENT:IR(uA) 16 14 12 10 8 6 4 2 0 VF DISPERSION MAP IR DISPERSION MAP AVE:4.67uA Ta=25 VR=10V n=30pcs FORWARD VOLTAGE:VF(mV) 410 FORWARD VOLTAGE:VF(mV) 420 240 230 400 AVE:405.6mV 220 390 :3.0258mV 210 AVE:218.0mV 200 AVE:402.4mV 380 VF DISPERSION MAP 25 24 23 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:18.35pF Ta=25 f=1MHz VR=0V n=10pcs 20 RESERVE RECOVERY TIME:trr(ns) Ifsm 15 8.3ms 10 1cyc 30 25 20 15 10 5 AVE:6.20ns 0 IFSM DISRESION MAP trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 5 AVE:5.70A 0 10 Ifsm 8.3ms 8.3ms 15 Ifsm t 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 5 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA IF=10mA 5 1ms time 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 1000 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.B 2/3 RB411D Diodes 0.5 0.2 1.5 0A 0V 1 DC D=1/2 0.5 Sin(180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 Io t T VR D=t/T VR=10V Tj=125 D=1/2 0.3 Sin(180) 0.2 DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.15 0.1 DC 0.05 Sin(180) D=1/2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1.5 0A 0V t 1 DC D=1/2 0.5 Sin(180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) T Io VR D=t/T VR=10V Tj=125 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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