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RB420D
Diodes
Shottky barrier diode
RB420D
Application Low current rectification Dimensions (Unit : mm) Lead size figure (Unit : mm)
1.9
2.80.2
1.60.1
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
0.15 0.06 (3)
0.1
0.2
1.0MIN.
0.95
00.1 0.30.6
0.8MIN.
(2)
(1) 0.95 1.90.2
0.80.1 1.10.2 0.01
SMD3
Structure Silicon epitaxial planar
0.95
Structure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1
3.50.05
8.00.2
3.20.1
3.20.1
4.00.1
1.05MIN
00.5
5.50.2
3.20.1
1.350.1
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak60Hz1cyc*1 Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 100 1 125 -40 to +125
Unit V V mA A
(*1)Rating of per diode
Electrical characteristics (Ta=25C) Parameter Symbol VF1 Forward voltage
Min. -
Typ. 6
Max. 0.45 1 -
Unit V A pF
Conditions IF=10mA VR=10V VR=10V , f=1MHz
Reverse current Capacitance between terminals
I R1 Ct1
Rev.C
2.4
0.4 0.05
0.1
2.90.2 Each lead has same dimension
1/3
RB420D
Diodes
Electrical characteristic curves (Ta=25C)
100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=75 10 Ta=125 1 Ta=-25 Ta=25 100 10 1 0.1 Ta=-25 0.01 0.001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=125
100
f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75
Ta=25
10
0.1
0.01
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
400 FORWARD VOLTAGE:VF(mV) 390 380 370 360
AVE:425.2mV AVE:370.9mV Ta=25 Ta=25 IF=1A IF=10mA n=30pcs n=10pcs
500 REVERSE CURRENT:IR(nA) 400 300 200 100 0 AVE:98.96nA Ta=25 VR=10V n=30pcs
30 25 20 15 10 5 AVE:5.81pF 0 Ta=25 f=1MHz VR=10V n=10pcs
350
:1.6771mV
VF DISPERSION MAP
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ct DISPERSION MAP
20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 8.3ms 10 1cyc
15 Ifsm 10 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A)
15 Ifsm 10
t
5
5 AVE:5.5A 0
5
0 0.1 IFSM DISRESION MAP 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Rth(j-a)
0.1 0.08 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W)
0.003
D=1/2 REVERSE POWER DISSIPATION:PR (W) 0.002 D=1/2 DC 0.001 Sin(180) Sin(180) DC
100
0.06 0.04 0.02 0 0
10
IM=1mA
IF=10mA
1ms
time
300us
1 0.001
0.1
10
1000
0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30
TIME:t(s) Rth-t CHARACTERISTICS
Rev.C
2/3
RB420D
Diodes
0.3 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.2 DC 0.15 0.1 0.05 0 0 25 50 75 100 125 Sin(180) D=1/2 T 0A 0V Io t VR D=t/T VR=20V Tj=125 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.2 0.15 D=1/2 0.1 0.05 0 0 25 50 75 100 125 Sin(180) 0.3 0A 0V DC Io t T VR D=t/T VR=20V Tj=125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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