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| RF051UA1D Diodes Fast recovery diode RF051UA1D Applications General rectification External dimensions (Unit : mm) 2.90.1 0.40.1 0.05 Land size figure (Unit : mm) 1.9 0.95 0.95 Each lead has same dimension 0.160.1 0.06 1.6 Features 1) Small power mold type. (TSMD6) 2) Very fast recovery. 3) High reliability 0.45 0.35 2.80.2 0.35 0.45 0.2 0.1 1.0 min. 00.1 0.30.6 0.7 0.8 (1) (2) 0.95 (3) 0.330.03 0.70.1 0.850.1 1.0Max TSMD6 Construction Silicon epitaxial planar 0.95 1.90.2 Structure ROHM : TSMD6 dot (year week factory) + day Taping specifications(Unit : mm) 4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1 3.50.05 3.20.08 8.00.2 3.20.08 4.00.1 1.10.1 00.5 5.50.2 3.20.08 1.10.08 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repatitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 100 100 0.5 5 150 -55 to +150 Unit V V A A (*1) Rating for a per diode Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR Min. - Typ. - Max. 0.98 10 25 Unit V A ns Conditions IF=0.5A VR=100V IF=0.5A,IR=1A,Irr=0.25*IR trr 2.4 (6) (5) (4) 1/3 RF051UA1D Diodes Electrical characteristic curves (Ta=25C) 1 Ta=75 1000000 100000 10000 1000 Ta=25 100 Ta=-25 10 1 Ta=150 Ta=125 Ta=75 10 f=1MHz f=1MHz 0.1 Ta=125 Ta=150 0.01 Ta=-25 0.001 0 200 400 600 800 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 100 Ta=25 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 0 20 40 60 80 0 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 910 1000 10 Ta=25 VR=100V n=30pcs 9 Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 REVERSE CURRENT:IR(nA) Ta=25 IF=0.5A n=30pcs 900 800 700 600 500 400 300 200 100 AVE:147.6nA 8 7 6 5 4 3 2 1 0 AVE:3.13pF 890 880 AVE:880.2mV 870 860 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 50 30 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 40 35 30 25 20 15 10 5 0 25 20 15 10 5 0 AVE:5.30ns PEAK SURGE FORWARD CURRENT:IFSM(A) 45 RESERVE RECOVERY TIME:trr(ns) Ifsm 1cyc 8.3ms Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 100 8.3ms 8.3ms 1cyc 10 AVE:11.6A 1 trr DISPERSION MAP Mounted on epoxy board IM=10mA IF=0.1A 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 1000 1 1ms time TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Rth(j-a) Per chip 0.8 DC D=1/2 0.6 Sin(180) 0.4 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 300us Rth(j-c) 10 10 FORWARD POWER DISSIPATION:Pf(W) 1000 100 0.2 1 0.001 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 0.1 1 10 100 0 0 0.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1 TIME:t(s) Rth-t CHARACTERISTICS 2/3 RF051UA1D Diodes 0.05 Per chip 1.5 Per chip 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.04 0A 0V Io t T VR D=t/T VR=50V Tj=150 Per chip 0A 0V Io t T VR D=t/T VR=50V Tj=150 REVERSE POWER DISSIPATION:PR (W) 1 1 0.03 0.02 DC 0.01 0 0 Sin(180) D=1/2 DC D=1/2 0.5 DC D=1/2 0.5 Sin(180) Sin(180) 0 0 0 25 50 75 100 125 150 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:4.40kV 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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