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RF1001T2D
Diodes
Fast recovery diodes
RF1001T2D
Applications General rectification External dimensions (Unit : mm) Structure
4.50.3 0.1
8.00.2 12.00.2
Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
1.2
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2 13.5MIN
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.00.2
0.70.1 0.05
8.0
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Param eter R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current (*1) Forward current s urge peak 60Hz 1cyc Junction tem perature Storage tem perature (*1) Per chip Io/2 Sym bol VRM VR Io IFSM Tj Ts tg Lim its 200 200 10 80 150 -55 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance Symbol VF IR trr jc Min. Typ. 0.87 0.01 15 Max. 0.93 10 30 2.5 Unit V A ns /W Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE
Rev.B
1/3
RF1001T2D
Diodes
Electrical characteristic curves
10
10000 Ta=150
Ta=150 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 f=1MHz
Ta=125 Ta=75 Ta=-25
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
1
Ta=25
1000
Ta=75 100 Ta=25 10 Ta=-25 1
100
0.1
0.01
10
0.001
0 10 0 20 0 3 0 0 40 0 5 00 60 0 7 00 80 0 9 00 10 0 1 10 12 0 0 0 0
0.1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
890 Ta=25 IF=5A n=30pcs
100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 AVE:857.4mV 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:10.7nA Ta=25 VR=200V n=30pcs
200 195 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 190 185 180 175 170 165 160 155 150 Ct DISPERSION MAP AVE:174.9pF Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
880
870
860
850
840
300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50
30 25 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
20 15 10
1cyc
10
5 AVE:14.5ns 0
AVE:167.0A
0 IFSM DISRESION MAP
1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 20 Mounted on epoxy board
IF=5A
100
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc
100
IM=100mA
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 10
1ms time 300us
15 DC D=1/2 10 Sin(180)
100
1
Rth(j-c)
5
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
Rev.B
2/3
RF1001T2D
Diodes
30 25 20 DC 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) Sin(180) D=1/2 0A 0V Io t
30 25 20 15 10 Sin(180) 5 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) DC D=1/2 0A 0V Io t
30 No break at 30kV No break at 30kV 25 20 15 10 5 0
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
VR D=t/T VR=100V T Tj=150
VR D=t/T VR=100V T Tj=150
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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