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RF1K49223
Data Sheet January 2002
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETTM Power MOSFET
The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49223.
Features
* 2.5A, 30V * rDS(ON) = 0.150 * Temperature Compensating PSPICE(R) Model * Thermal Impedance PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER RF1K49223 PACKAGE MS-012AA BRAND RF1K49223
Symbol
D1(8) D1(7) S1(1) G1(2)
NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e. RF1K4922396.
D2(6) D2(5) S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1 2 3 4
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
RF1K49223
Absolute Maximum Ratings
TA= 25oC Unless Otherwise Specified RF1K49223 Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg -30 -30 20 2.5 Refer to Peak Current Curve Refer to UIS Curve 2 0.016 -55 to 150 300 260 W W/oC
oC oC oC
UNITS V V V A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TA = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 12) VGS = VDS, ID = 250A, (Figure 11) VDS = -30V, VGS = 0V VGS = 20V ID = 2.5A, (Figure 9, 10) VGS = -10V VGS = -4.5V TA = 25oC TA = 150oC MIN -30 -1 VGS = 0V to -20V VGS = 0V to -10V VGS = 0V to -2V VDD = -24V, ID 2.5A, RL = 9.6 Ig(REF) = -1.0mA (Figure 14) TYP 9 19 60 34 28 15 1.5 MAX -3 -1 -50 100 0.150 0.360 40 140 35 19 1.9 UNITS V V A A nA ns ns ns ns ns ns nC nC nC
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance
IGSS rDS(ON)
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge
tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJA
VDD = -15V, ID 2.5A, RL = 6, VGS = -10V, RGS = 25
Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Ambient
VDS = -25V, VGS = 0V, f = 1MHz (Figure 13) Pulse Width = 1s Device mounted on FR-4 material
-
580 260 38 -
62.5
pF pF pF
oC/W
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = -2.5A ISD =-2.5A, dISD/dt = 100A/s MIN TYP MAX -1.25 49 UNITS V ns
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
RF1K49223 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC)
0.6 0.4
0.2 0
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
10 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
THERMAL IMPEDANCE
ZJA, NORMALIZED
1
PDM
0.1 t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-1 100 10-2 t, RECTANGULAR PULSE DURATION (s) 101 102 103
SINGLE PULSE 0.001 10-5 10-4 10-3
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-50
TJ = MAX RATED TA = 25oC IDM, PEAK CURRENT (A)
-100
VGS = -20V
TA = 25oC
ID, DRAIN CURRENT (A)
-10
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I
VGS = -10V -10 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
= I25
150 - TA 125
-1
5ms 10ms 100ms
-0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1s VDSS(MAX) = -30V -10 DC -100
-0.01 -0.1
-1
-1 10-5
10-4
10-3
10-2
10-1
100
101
VDS, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
RF1K49223 Typical Performance Curves
-15 IAS, AVALANCHE CURRENT (A) -10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) STARTING TJ = 25oC
(Continued)
-20
VGS = -20V VGS = -10V VGS = -8V
-16
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC VGS = -7V VGS = -6V
-12
VGS = -5V
STARTING TJ = 150oC
-8
VGS = -4.5V
-4
-1 0.1
1 10 tAV, TIME IN AVALANCHE (ms)
100
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
500 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -16 -55oC 25oC VDD = -15V rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 150oC 400 ID = -5.0A ID = -2.5A 300 ID = -1.25A 200 ID = -0.625A 100
FIGURE 7. SATURATION CHARACTERISTICS
-20 ID(ON), ON-STATE DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V
-12
-8
-4
0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10
0 -2 -4
-6
-8
-10
VGS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = -2.5A 1.5 NORMALIZED GATE THRESHOLD VOLTAGE
1.2 VGS = VDS, ID = -250A
1.0
1.0
0.8
0.5
0.6
0 -80
-40
0
40
80
120
160
0.4 -80
-40
TJ, JUNCTION TEMPERATURE (oC)
0 40 80 120 TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
RF1K49223 Typical Performance Curves
1.2 ID = -250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 600 1.1 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD
(Continued)
750 CISS
450 COSS 300
1.0
0.9
150 CRSS
0.8 -80
0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 160 0 -5 -10 -15 -20 -25 VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
VDS , DRAIN TO SOURCE VOLTAGE (V) -30.0 VDD = BVDSS -22.5
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VDD = BVDSS -7.5
-15.0
-7.5
RL = 12 IG(REF) = -0.26mA VGS = -10V PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50 BVDSS VDD = 0.25 BVDSS 20 --------------------I G ( ACT ) I G ( REF ) t, TIME (s)
-5.0
-2.5
0
0
80 --------------------I G ( ACT )
I G ( REF )
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0
+
VDD VDD
0V VGS
DUT tP IAS 0.01
IAS tP BVDSS VDS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
VGS , GATE TO SOURCE VOLTAGE (V)
-10.0
RF1K49223 Rev. B
RF1K49223 Test Circuits and Waveforms
(Continued)
tON td(ON) tr 0 RL VGS VDS 10%
tOFF td(OFF) tf 10%
VDD
+
VDS VGS 0
90%
90%
VGS RGS
DUT
10% 50% PULSE WIDTH 90% 50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS RL 0 VGS = -2V VGS VDD
+
Qg(TH)
VDS
-VGS Qg(-10) VDD Qg(TOT) 0 Ig(REF)
VGS = -10V
DUT
VGS = -20V
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
Soldering Precautions
The soldering process creates a considerable thermal stress on any semiconductor component. The melting temperature of solder is higher than the maximum rated temperature of the device. The amount of time the device is heated to a high temperature should be minimized to assure device reliability. Therefore, the following precautions should always be observed in order to minimize the thermal stress to which the devices are subjected. 1. Always preheat the device. 2. The delta temperature between the preheat and soldering should always be less than 100oC. Failure to preheat the device can result in excessive thermal stress which can damage the device. 3. The maximum temperature gradient should be less than 5oC per second when changing from preheating to soldering. 4. The peak temperature in the soldering process should be at least 30oC higher than the melting point of the solder chosen. 5. The maximum soldering temperature and time must not exceed 260oC for 10 seconds on the leads and case of the device. 6. After soldering is complete, the device should be allowed to cool naturally for at least three minutes, as forced cooling will increase the temperature gradient and may result in latent failure due to mechanical stress. 7. During cooling, mechanical stress or shock should be avoided.
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
RF1K49223 PSPICE Electrical Model
SUBCKT RF1K49223 2 1 3 ;rev 4/7/97
CA 12 8 7.29e-10 CB 15 14 5.01e-10 CIN 6 8 5.55e-10
ESG LDRAIN + 5 RLDRAIN + EBREAK 17 18 DRAIN 2 RSLC1 51 ESLC 50 DBODY
10
8 6
RSLC2
5 51 DPLCAP EVTHRES + 19 8 6
EBREAK 5 11 17 18 -35.46 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1
GATE 1
LGATE RGATE 9 RLGATE
EVTEMP
20
IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 1.27e-9 LSOURCE 3 7 4.20e-10 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD
18 + 22
CIN
S1A 12 S1B CA 13 + EGS 6 8 13 8
S2A 14 13 S2B CB + EDS 5 8 14 IT 15 17
RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 19.3e-3 RGATE 9 20 7.44 RLDRAIN 2 5 10 RLGATE 1 9 12.7 RLSOURCE 3 7 4.2 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 65.37e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
-
-
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*48),2.5))} .MODEL DBODYMOD D (IS = 3.30e-13 RS = 4.56e-2 TRS1 =6.98e-4 TRS2 =8.08e-7 CJO = 8.21e-10 TT = 3.51e-8 M=0.4) .MODEL DBREAKMOD D (RS = 8.18e- 1TRS1 =5.28e- 3TRS2 = -7.18e-5 .MODEL DPLCAPMOD D (CJO = 2.52e-1 0IS = 1e-3 0N = 10 M=0.6) .MODEL MMEDMOD PMOS (VTO= -1.95 KP=0.75 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=7.44) .MODEL MSTROMOD PMOS (VTO= -2.44 KP= 7.25 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MWEAKMOD PMOS (VTO= -1.68 KP=0.045 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=74.4 RS=0.1) .MODEL RBREAKMOD RES (TC1 = 9.45e- 4TC2 = -1.01e-7) .MODEL RDRAINMOD RES (TC1 = 3.69e-3 TC2 = 5.90e-6) .MODEL RSLCMOD RES (TC1=3.46e-3 TC2= 1.26e-6) .MODEL RSOURCEMOD RES (TC1=3.69e-3 TC2=5.90e-6) .MODEL RVTHRESMOD RES (TC=-5.19e-4 TC2= 5.02e-6) .MODEL RVTEMPMOD RES (TC1 = -3.54e- 3TC2 = -6.53e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .ENDS NOTE:For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options;IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = 6.94 VOFF= 3.94) VON = 3.94 VOFF= 6.94) VON = 0.40 VOFF= -2.60) VON = -2.60 VOFF= 0.40)
(c)2002 Fairchild Semiconductor Corporation
+
DBODY 5 7 DBODYMOD DBREAK 7 11 DBREAKMOD DPLCAP 10 6 DPLCAPMOD
-
-
RDRAIN 21 16 MWEAK MMED MSTRO 8 RSOURCE DBREAK 11
LSOURCE 7 RLSOURCE RBREAK 18 RVTEMP 19 SOURCE 3
VBAT +
8 22 RVTHRES
RF1K49223 Rev. B
RF1K49223 PSPICE Thermal Model
7 JUNCTION
REV 28 Feb 97 RF1K49223 CTHERM1 7 6 1.00e-7 CTHERM2 6 5 9.00e-4 CTHERM3 5 4 3.00e-3 CTHERM4 4 3 4.00e-2 CTHERM5 3 2 5.20e-3 CTHERM6 2 1 1.90e-2 RTHERM1 7 6 7.10e-2 RTHERM2 6 5 1.90e-1 RTHERM3 5 4 5.95e-1 RTHERM4 4 3 4.27 RTHERM5 3 2 1.2e1 RTHERM6 2 1 1.04e2
RTHERM1 CTHERM1
6
RTHERM2
CTHERM2
5
RTHERM3
CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
1
CASE
(c)2002 Fairchild Semiconductor Corporation
RF1K49223 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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