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RF2001T2D
Diodes
Fast recovery diode
RF2001T2D
Applications General rectification External dimensions (Unit : mm)
9.9 0.8 0.3 2.2
Structure
10.0
1.3 0.8 (1) (2) (3)
13.5MIN
Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
10.00.3 0.1 1.80.2 7.00.3 0.1
4.50.3 0.1 2.80.2 1.1 0.1
7.2 1.2
8.00.2 12.00.2
15.0 0.70.015 7.0 8.0
3.10.1
1.2
5.00.2
17.00.4 0.2
2.60.03 0.8
0.70.015
Construction Silicon epitaxial planar
2.540.5
2.540.5 1.9
2.60.03
7.2 3-1.2 1.6 12.4
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter R everse voltage (repetitive peak) R everse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc Junction temperature Storage temperature (*1) Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 20 100 150 -55 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. Typ. Max. 0.93 10 30 Unit V A ns IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Conditions
1.35
1/3
RF2001T2D
Diodes
Electrical characteristic curves
10 Ta=150 1000
REVERSE CURRENT:IR(nA)
Ta=150 10000 Ta=125 1000 f=1MHz
FORWARD CURRENT:IF(A)
1
Ta=25 0.1 Ta=75 Ta=-25
Ta=75 100 Ta=25 10 Ta=-25 1
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125
100
10
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 50 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 100 150 200 250 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
890 Ta=25 IF=10A n=30pcs
100 90
REVERSE CURRENT:IR(nA)
400 Ta=25 VR=300V n=30pcs 390
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD VOLTAGE:VF(m V)
880
80 70 60 50 40 30 20 10 AVE:10.1nA
380 370 360 350 340 330 320 AVE:352.9pF
Ta=25 f=1MHz VR=0V n=10pcs
870
860
850 AVE:867.0mV 840 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300 250
PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns)
30 Ifsm 1cyc 8.3ms 25 20 15 10 5 AVE:20.2ns 0 trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm
PEAK SURGE FORWARD CURRENT:IFSM(A)
8.3ms
8.3ms
200 150 100 50 0 IFSM DISRESION MAP
100
1cyc
10
AVE:237.0A
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 40 35 30
FORWARD POWER DISSIPATION:Pf(W)
100
1000 Ifsm
PEAK SURGE FORWARD CURRENT:IFSM(A)
100
Mounted on epoxy board
IM=100mA IF=10A
t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
10
1ms
time
Rth(j-a)
DC D=1/2 Sin(180)
300us
25 20 15 10 5
100
1
Rth(j-c)
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0 5 10 15 20 25 30 35 40 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RF2001T2D
Diodes
40 35 DC
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
40 0A 0V t D=1/2 T Io VR
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
30 DC
ELECTROSTATIC DDISCHARGE TEST ESD(KV)
35 30
No break at 30kV 25 Sin(180) 20 15 10 5 0 100 125 150 C=200pF R=0
No break at 30kV
30 25 20 15 10 5 0 0 25 50 75 Sin(180)
D=t/T VR=100V Tj=150
D=1/2 25 20 15 10 5 0 T 0 25 50 0A 0V t
Io VR D=t/T VR=100V Tj=150 75
100
125
150
AMBIENT TEMPERATURE:Ta() Derating curv e (Io-Ta)
CASE TEMPARATURE:Tc() Derating curv e (Io-Tc)
C=100pF R=1.5k
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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