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* CDMA Systems * General Purpose Frequency Conversion * Portable Battery Powered Equipment
RF2413

* Digital and Spread Spectrum Systems * Analog Communication Systems * GSM Systems

The RF2413 is a monolithic integrated transmitter universal modulation IC capable of generating modulated AM, PM, or compound carriers in the VHF/UHF frequency range. The modulation is performed at VHF, then the resulting spectrum is upconverted to a frequency range between 100MHz and 1000MHz. Up to 60dB of power control is possible through the use of two gain control pins. The IC contains all of the required components to implement the modulation function including differential amplifiers for the baseband inputs, a 90 hybrid phase splitter, limiting LO amplifiers, two balanced mixers, a combining, gain-controlled differential amplifier, a second balanced mixer, and an output gain-controlled RF amplifier which will drive a 50 load.
1
.299 .292
.009 .005 .018 .014
5
MODULATORS AND UPCONVERTERS
.092
.493 .486
.050
8 MAX 0MIN
.413 .398
.050 .016
.010 .008

Si BJT Si Bi-CMOS GaAs HBT SiGe HBT Si CMOS
GaAs MESFET
20 RF OUT
!"
* Single 3V to 6.5V Power Supply * Low Broadband Noise Floor * Excellent Amplitude & Phase Balance * Digitally Controlled Power Down * 30MHz to 100MHz IF Frequency * 200MHz to 1000MHz RF Frequency
VDD2 1 VDD1 2 PD 3 I SIG 4 I REF 5 POWER CONTROL
19 GND4 18 GND3 17 LO2 16 GND2
Q REF 6 Q SIG 7 GC1 8 GC2 9 LO1 10
-45 +45
15 MIX IN+ 14 MIX IN13 GND1 12 MOD OUT11 MOD OUT+

RF2413 RF2413 PCBA Gain Controlled Dual-Conversion Quadrature Modulator Fully Assembled Evaluation Board Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com

RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Rev B3 990419
5-19
RF2413
Absolute Maximum Ratings Parameter
Supply Voltage Input LO and RF Levels I and Q Modulation Levels Operating Ambient Temperature Storage Temperature
Rating
-0.5 to 7.0 +6 VDD -40 to +85 -40 to +150
Unit
VDC dBm V C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Specification Min. Typ. Max.
Unit
Condition
T = 25C, VDD =5V, VREF =2.5V, BB=100kHz, LO1=70MHz, LO2=700MHz, , VMOD =3.0VPP SSB, unless indicated otherwise.
Modulation Signals (I&Q)
5
MODULATORS AND UPCONVERTERS
Frequency Range Signal Level Reference Voltage (VREF) Input Impedance Amplitude Balance Quadrature Phase Error
DC to 25 3.0 2.0 to 3.0 3 0.1 1 30 to 200 30 to 250 -5 to +6 750-j500
MHz VPP V k dB MHz MHz dBm
For 1dB compression
First LO Input
Frequency Range Power Level Input Impedance For 30dB sideband suppression For 20dB sideband suppression At 100MHz, without external 50 termination
IF Inputs & Outputs (MOD OUT & MIX IN)
Output Impedance Input Impedance 290-j160 170-j180 6000-j2500 5200-j2800 100 to 1000 0 to +6 2000-j3000 600-j1400 MHz dBm At 100MHz At 200MHz At 100MHz At 200MHz
Second LO Input
Frequency Range Power Level Input Impedance
At 300MHz, without external 50 termination At 1000MHz, without external 50 termination VDD =6V, LO1,2 power=0dBm, SSB Freq=200MHz to 500MHz Freq=500MHz to 800MHz Freq=800MHz to 1000MHz Gain 1 and Gain 2
RF Output
Output Power -2 Total Gain Control Range Gain Control Voltage for minimum gain Gain Control Voltage for maximum gain Nominal Output Impedance Output VSWR Output Broadband Noise Power +6 +2 -1 75 1.5 5.0 50 1.5:1 3:1 -155 +5 dBm dBm dBm dB V V Freq<600MHz 600MHz5-20
Rev B3 990419
RF2413
Spurious
Sideband Suppression Carrier Suppression 30 20 35 25 dBc dBc Single sideband modulation Unadjusted. Unadjusted. Modulation DC offset may be externally adjusted for maximum suppression. Suppression is then typically 40dBc. Odd unfiltered IF Even unfiltered IF
First LO Harmonics
20 30 <100 >50 VCC 0 5 3 to 6.5 35
dBc dBc ns k V V V V mA
Power Down
Turn On/Off Time PD Input Resistance Power Down "ON" Power Down "OFF"
Threshold voltage Threshold voltage Specifications Operating limits
Power Supply
Voltage Current Consumption
50
5
MODULATORS AND UPCONVERTERS
Rev B3 990419
5-21
RF2413
Pin 1 Function VDD2 Description
Supply Voltage for the RF Output Stage only. A 33pF external bypass capacitor is required and an optional 0.1F will be required if no other low frequency bypass capacitors are nearby. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Though the part is designed to run from a 5V supply, it will work at 3V. Gain and available output power will be reduced by 5 to 10dB. This also means that the part is sensitive to unintended power supply variation. Power supply voltage should be kept constant, or another way of maintaining constant output power is required. Supply Voltage for all circuits except the RF Output Stage. The same comments as for VDD2 apply to this pin. Power Down control. When this pin is 0V all circuits are turned off, and when this pin is VDD all circuits are operating. This is a high impedance input, internally connected to the gates of a few FETs. To minimize current consumption in power down mode, this pin should be as close to 0V as possible. Turn-on voltage of some parts of the circuit may be as low as 0.1V. In order to maximize output power this pin should be as close to VDD as possible during normal operation.
Interface Schematic
2 3
VDD1 PD
VDD1
VDD2
5
MODULATORS AND UPCONVERTERS
PD
4
I SIG
Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3k.
I SIG
5
I REF
Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned 0.15V (relative to the I SIG DC voltage). Without tuning it will typically be better than 25dB. Input impedance of this pin is about 3k.
I REF
6
Q REF
7
Q SIG
8
GC1
9
5-22
GC2
Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned 0.15V (relative to the Q SIG DC voltage). Without tuning, the carrier suppression will typically be better than 25dB. The input impedance of this pin is about 3 k. Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3k. Gain control of the IF input amplifier. This pin, when used as the only gain control, will give a 30dB control range. When used together with GC2, a 60dB range is available. When this pin is at 1.8V or lower, the gain is set to the minimum; when this pin is at 3.8V or above, the gain is set to the maximum; see the plot below for typical characteristics. If fixed maximum output level is required, it is recommended to connect this pin to VDD. There are no provisions in the chip for limiting the bandwidth of the gain control, so very fast response times are available. If a slower response is desired, an external capacitor can be added. Gain control for the RF output amplifier. This pin has the same control characteristics as GC1.
Same as pin 5.
Same as pin 4.
GCx
Same as pin 8.
Rev B3 990419
RF2413
10 LO1
High impedance modulator LO input. A shunt 56 resistor can be used for matching. This pin is NOT internally DC blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 1nF is recommended.
LO1
11
MOD OUT+
12 13 14
MOD OUTGND1 MIX IN-
Balanced IF output port. If no filtering is required this pin can be connected directly to the MIX IN+ pin. This pin is NOT DC blocked and carries DC. A blocking capacitor of 1nF is needed when this pin is connected to a DC path. An appropriate matching network may be needed if an IF filter is used. Same as pin 11, except complementary output. See pin 11. Ground connection for all baseband circuits, modulator and the IF buffer amplifier. Keep traces physically short and connect immediately to ground plane for best performance. High impedance balanced input to the gain controlled IF stage. This pin MIX IN+ has an internal DC blocking capacitor. If no IF filter is needed, this pin may be connected directly to MOD OUT-. If an IF filter is used, an external shunt resistor to ground may be needed to provide correct matching BIAS for the filter. Same as pin 14, except complementary input. See pin 14. Ground connection for the limiting LO2 buffer amplifier. Keep traces physically short and connect immediately to ground plane for best performance. Mixer LO Input port. A shunt 56 resistor can be used for matching. This pin has internal DC blocking,
MOD OUT+ MOD OUT-
MIX IN-
5
MODULATORS AND UPCONVERTERS
BIAS
15 16 17
MIX IN+ GND2 LO2
LO2
BIAS
BIAS
18 19 20
GND3 GND4 RF OUT
Ground connection for the IF mixer and the RF gain control stage. Keep traces physically short and connect immediately to ground plane for best performance. Ground connection for the RF output stage. Keep traces physically short and connect immediately to ground plane for best performance. 50 output. This pin is not internally DC blocked, and an external blocking capacitor of 100pF is required.
RF OUT
Rev B3 990419
5-23
RF2413

VDD 1 100 nF CMOS POWER DOWN 100 nF Q INPUT 1 F VREF 470 470 470 100 nF Q INPUT GAIN CONTROL 1 GAIN CONTROL 2 LO 1 INPUT 50 strip Note 3 1 nF 10 56 NOTE 1: Optional; High input impedance without resistor. SMD resistor mounted adjacent to package pin, grounded through via to the ground plane. If no IF filter is needed, tie pins 11, 12, 14, and 15 as shown. Otherwise insert the filter and the matching network. Gain control pins (8 and 9) may be tied together directly. 470 7 8 9
-45 +45
33 pF 20 POWER CONTROL 19 18 33 pF 2 3 4 5 6 15 14 13 12 11 Note 2
50 strip
RF OUTPUT
50 strip 17 16 Note 1 56
LO 2 INPUT
5
MODULATORS AND UPCONVERTERS
NOTE 2:
NOTE 3:
5-24
Rev B3 990419
RF2413

(Download Bill of Materials from www.rfmd.com.)
C5 100 pF P1-1 C1 33 pF C6 100 nF 1 2 3 ISIG J1 P1-3 50 strip 4 5 17 16 POWER CONTROL 20 19 18 C4 100 pF 50 strip RF OUT J5
50 strip
LO2 IN J4
C2 33 pF 50 strip
6 15 14 13
-45 +45
R2 56
QSIG J2 P2-1 P2-3 LO1 IN J3
7 8 9 10
FOR 50 MATCH
5
MODULATORS AND UPCONVERTERS
50 strip
C3 1 nF
12 11 P1 P2 VCC GND REF P2-3 P2-1 1 2 3 GAIN 1 GND GAIN 2
R1 56
2413400 Rev A
P1-1
1 2
FOR 50 MATCH
P1-3
3
Rev B3 990419
5-25
RF2413

Board Size 0.039"; Board Material FR-4; Multi-Layer
5
MODULATORS AND UPCONVERTERS
5-26
Rev B3 990419
RF2413
Pout vs. Gain Control Voltages
10
0
-10
-20
Pout (dBm)
-30
-40
-50
Vg1=Vg2=V gain Vg1=Vdd, Vg2=V gain
-60 Vg2=Vdd, Vg1=V gain -70 1.5 2 2.5 3 3.5 4 4.5 5
Vgain (Volts)
Rev B3 990419
5-27
MODULATORS AND UPCONVERTERS
BB: 100 kHz, 1.5 Vpp LO1: 124 MHz, 0 dBm LO2: 569 MHz, 0 dBm Vdd: 5.0V, Vref=2.5V
5
5
MODULATORS AND UPCONVERTERS
5-28
RF2413
Rev B3 990419

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