 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary 2 Typical Applications * 3V CDMA/AMPS Cellular Handsets * Spread-Spectrum Systems RF3105 3V 900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3105 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS ! Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Input/Output Internally Matched @ 50 * Single 3V Supply * 29dBm Linear Output Power * 28dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT * 35% Linear Efficiency VREG 3 4 VMODE 5 VCC2 Ordering Information RF3105 RF3105 PCBA 3V 900MHz Linear Amplifier Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 001030 2-253 RF3105 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT 31dBm) Control Voltage (VREG) Preliminary Rating +8.0 +4.5 +4.2 +10 +3.5 -30 to +85 -30 to +150 Unit VDC VDC VDC dBm VDC C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Input RF Power Mode Voltage (VMODE) Operating Ambient Temperature Storage Temperature Parameter Overall Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Figure Noise Power Specification Min. Typ. Max. Unit Condition T=25C Ambient, VCC =3.4V, VREG =2.75V, VMODE =0, Freq=824MHz to 849MHz unless otherwise specified 824 27 29 849 32.5 -30 -40 28 32 29 35 -44 -58 <2:1 -56 10:1 6:1 8 -89 MHz dB dBc dBc dBm % dBc dBc ACPR @ 885kHz ACPR @1980kHz No damage. No oscillations. dB dBm/30kHz MHz dBc dBc dBm % dB At 45MHz offset. FM Mode Frequency Range Second Harmonic Third Harmonic Max CW Output Power Total Efficiency (AMPS) Large Signal Gain Input VSWR Output VSWR 824 849 -30 -40 32 31.5 45 27 <2:1 10:1 6:1 3.2 3.4 100 VCC =3.4V, POUT =31.5dBm No damage. No oscillations. 4.5 8 40 10 0.2 2.85 V mA mA s A V V Power Supply Power Supply Voltage Quiescent Current VREG Current Turn On/Off time Total Current (Power down) VREG "Low" Voltage VREG "High" Voltage Pin 3, VREG =2.75V VREG =Low 2.65 0 2.75 2-254 Rev A1 001030 Preliminary Pin 1 2 3 4 5 6 7 Pkg Base Function VCC1 RF IN VREG VMODE VCC2 RF OUT GND GND Description First stage collector supply. A low frequency decoupling capacitor (e.g., 4.7F) is required. RF input internally matched to 50. This input is internally AC coupled. Regulated voltage supply for amplifier bias. For nominal operation, VMODE is set to LOW. When set HIGH: VMODE will increase the bias current by approximately 50%; and, large signal gain is increased by approximately 1.5dB. Output stage collector supply. A low frequency decoupling capacitor (e.g., 4.7F) is required. RF output internally matched to 50. This output is internally AC coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. RF3105 Interface Schematic 2 POWER AMPLIFIERS Rev A1 001030 2-255 RF3105 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Er = 4.7 H = 14 mils t = 1 mil Preliminary 2 POWER AMPLIFIERS VCC1 C1 4.7 F 1 7 J1 RF IN 50 strip 2 6 50 strip J2 RF OUT VREG C3 4.7 F 3 3105400- 4 5 C2 4.7 F VMODE VCC2 VCC = 3.4 V VREG = 2.75 V VMODE = 0 2-256 Rev A1 001030 Preliminary Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.028", Board Material FR-4, Multi-Layer Assembly Top RF3105 2 POWER AMPLIFIERS Inner 1 Back Rev A1 001030 2-257 RF3105 Preliminary 2 POWER AMPLIFIERS 2-258 Rev A1 001030 |
Price & Availability of RF3105
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |