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| RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes Title AlGaAs, double-heterojunction, visible laser diodes RLD-78PP-G1 / RLD-78NP-G1 RLD-78PP-G1 and RLD-78NP-G1 are the semiconductor laser developed for the laser beam printer application. We have achieved the very small variations of the optical characteristics and low droop by ROHM original Epitaxial growth technology using Molecular Beam Epitaxy. In addition, they have the appropriate characteristics for sensor application as well. !Applications Laser beam printers Sensors !External dimensions (Units : mm) 902 0.40.1 1.0Min. P T y p e L.D. (1) (3) P.D. (2) 1.20.1 6.50.5 2.3 !Features 1) Minimum variation of radiation beam angle. 2) Low droop. 3) High stability wave length. 4) Can be driven by single power supply. 1.00.1 5.6 -0.025 Chip (1.27) +0 Glass window 4.4+0 3.6 N T y p e L.D. (1) (3) P.D. (2) 3-0.45 (3) (2) (1) !Absolute maximum ratings (Tc=25C) Parameter Output Reverse voltage Symbol Po Limits 5 2 30 -10~+60 -40~+85 Unit mW V V C C Laser PIN photodiode VR VR(PIN) Topr Tstg Operating temperature Storage temperature RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes !Electrical and optical characteristics (Ta=25C) Parameter Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Parallel deviation angle Perpendicular deviation angle Emission point accuracy Peak emission wavelength Droop Symbol Ith Iop Vop Im //* * // X Y Z P Min. 10 15 0.1 0.3 8 25 770 Typ. 25 45 1.9 0.2 0.55 11 30 785 5 Max. 45 65 2.3 0.3 0.9 15 38 2 3 80 795 10 Unit mA mA V mW/mA mA deg deg deg deg m nm % Po=3mW Po=3mW Po=3mW Po=3mW 2mW I(3mW)-I(1mW) Po=3mW Conditions Po=3mW * // and are defined as the angle within which the intensity is 50% of the peak value. !Electrical and optical curves 5 25C 40C 50C 60C THRESHOLD CURRENT : Ith (mA) 4 RELATIVE OPTICAL INTENSITY OPTICAL POWER : PO (mW) 100 90 80 70 60 50 40 30 1.0 direction direction 3 0.5 2 20 1 0 10 20 30 40 50 60 70 80 OPERATING CURRENT : IF (mA) 10 -20 -10 0 10 20 30 40 50 60 70 0 -40 0 ANGLE (deg) 40 PACKAGE TEMPERATURE : TC (C) Fig. 1 Optical output vs. operating current Fig. 2 Dependence of threshold current on temperature Fig. 3 Far field pattern RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes OPTICAL POWER : PO=3mW RELATIVE OPTICAL INTENSITY TC=25C OPTICAL POWER : PO (mW) 5 790 WAVELENGTH : (nm) 4 PO=5mW 785 3 PO=3mW 2 780 PO=1mW 1 0 0.2 0.4 0.6 0.8 1.0 MONITOR CURRENT : Im (mA) 775 25 30 40 50 60 775 780 785 790 795 PACKAGE TEMPERATURE : Tc (C) WAVELENGTH : (nm) Fig. 4 Dependence of wavelength on temperature Fig. 5 Dependence of emission spectrum on optical output Fig. 6 Monitor current vs. optical output 60 dP=30% 20% TEMPERATURE (C) 16 15% 10% 14 12 DROOP (%) 50 TC=60C 25C 10 8 6 4 40 30 2 25 1 2 3 4 5 0 1 2 3 4 5 6 OPTICAL POWER (mW) OPTICAL POWER (mW) Fig. 7 Temperature vs. output guidelines for various droop percentages Fig. 8 Dependence of droop on output |
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