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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
August 2005
RMPA1852 Quad-Band GSM/EDGE PA Module
Features
Quad band, GSM/EDGE PA module 7.0 x 7.0 mm x 1.3 mm Package Size GSM Integrated Power Control Solution GSM High Efficiency - 55% GSM, 50% DCS/PCS EDGE mode - 29 dBm Output Power, 27% EDGE PAE Low current consumption for Pout<16 dBm in EDGE mode Shutdown/Standby Capability for Battery Operation 50 RF Inputs and Outputs
Description
This 7 x 7mm PAM is a 50, quad-band dual mode, GSM/ EDGE PA module for 2.75G radio applications. In EDGE mode, the module supports High/Low power mode feature to maximize efficiency in low power operation. The module provides 50 input and output terminals. The module also includes closed loop power control circuitry for GSM applications, minimizing the required external components and maximizing board yields.
Packaging
1.30 Pin 1 Location 1.30 Typ. 0.25 1 0.75 0.50 0.50 3 Top View Through Package 7.0 mm x 7.0 mm 10 2 9 8 Side View
1.25
7.00 Typ.
7.00
4 5 0.50 0.50 0.75 1.25 6 7
11 12 13 14 0.10 0.60 1.10
0.25 7.00 Typ.
0.10 0.60 1.10
7.00
Pin 1
HB RF IN BAND SEL TX EN VBATT
1 2 3
8 9 10
HB RF OUT GND HB VCC3
4 5 6 7
11 12 13 14
V_DET LB VCC3 GND
VMODE VRAMP LB RF IN
LB RF OUT
Package Footprint (top view through package)
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA1852 Rev. C
ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Absolute Maximum Ratings
Parameter
Supply Voltage (Vcc) Input Power Control Voltage (Vramp) TX EN BAND SEL Duty Cycle at Max Power Operating Temperature Storage Temperature Junction Temperature
Value
6 12 3.0 3.0 3.0 50 -30 to +85 -55 to +150 150
Units
V dBm V V V % C C C
Operating Parameters
Parameter
Supply Voltage Supply Current Control Voltage Vramp "ON" -- GSM Mode Control Voltage Vramp "OFF" -- GSM Mode Control Voltage Vramp in EDGE Mode Band Select Low Band Select High VMODE Select Low VMODE Select High Band Select Current Tx Enable Low Tx Enable High Tx Enable Current PA Off PA On 0 2.5 GSM850/GSM900 DCS/PCS GSM Mode ON EDGE Mode ON 0 2.5 0 2.5 20
Test Conditions
VBATT and VCC VBATT and VCC, Tx Enable Low For Pout max, 5A max. For Pout min, 5A max.
Min
3.0
Typ
3.5
Max
5.2 20
Unit
V A V V
1.6 0.2 1.6
1.8
V 0.8 3.0 0.3 3.0 50 0.8 3.0 20 V V V V A V V A
2 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Electrical Specifications
Mode: GMSK Band: CEL Tx band (824-849 MHz)
Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50, Pin = 3 dBm, Temperature = 25C, Duty Cycle = 25%
Parameter
Frequency Output Power
Test Conditions
Temp = 25C, Vcc = 3.5 V Temp = 85C, Vcc = 2.9 V
Min
824 34.5 32.5 0
Typ
- 35 - +3 55 - -35 40 - - - -83
Max
849 - - +6 - 2.5:1
Unit
MHz dBm
Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Harmonics Cross Band Isolation @ 2fo Stability Noise Power Ruggedness Measured at DCS/PCS output. Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34 dBm into a 50 load. Ftx = 824-849, Frx = 869-894 MHz (RBW = 100 KHz) VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34.5 dBm into a 50 load. RF Pout 5-35 dBm to within 1 dB of final value. At Pout max Pout = 0 to 35 dBm Pin = 6 dBm Vramp = 0.2 to 1.8 V
dBm % Ratio dBm
50 - - - - - -
- -5 -20 -36
dB dBm dBm dBm dBm
No Damage
Output Power Switching Speed
-
-
2
S
Mode: EDGE
Band: GSM850 Tx band (824-849 MHz)
Modulation: EDGE modulation (3/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement
Parameter
Duty Cycle Output Power, Pout (H) Power Added Efficiency Low power current consumption mode (L) Gain
Test Conditions
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V) at Pout (H), (Temp = 25C, Vcc = 3.5 V) Pout<16 dBm at Pout (H) at Low power current consumption mode (L)
Min
1/8 - -
Typ
1/4 29.0 27
Max
1/4 - - 200 36 25
Unit
dBm % mA dB
Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage At Max Po (Temp = 25C, Vcc = 3.5 V) VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 All Spurious (Load VSWR = 6:1 at all angles Pin < 8 dBm) Po < 29,
- -
- -
2.0:1 -5
Ratio dBm
No Damage - - - - - - - - - - - -65 -83 -33 -57 -60 4 % dBc dBm dBc
Ftx = 824-849, Frx = 869-894 MHz (RBW = 100 KHz) Offset : 200 KHz Offset : 400 KHz Offset: 600 KHz Load 50
Error Vector Magnitude
3 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Electrical Specifications (Continued)
Mode: GMSK Band: EGSM Tx band (880-915 MHz)
Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50, Pin = 3 dBm, Temperature = 25C, Duty Cycle = 25%
Parameter
Frequency Output Power
Test Conditions
Temp = 25C, Vcc = 3.5 V Temp = 85C, Vcc = 2.9 V
Min
880 34.5 32.5 0
Typ
- 35 - +3 55 - -35 40 - - - - -
Max
915 - - +6 - 2.5:1
Unit
MHz dBm
Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Harmonics Cross Band Isolation @ 2fo Stability Noise Power Measured at DCS/PCS output. Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34 dBm into a 50 load. Ftx = 890-915, Frx = 935-960 MHz (RBW = 100 KHz) Ftx = 880-890, Frx = 925-935 MHz (RBW = 100 KHz) Ruggedness VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34.5 dBm into a 50 load. RF Pout 5-35 dBm to within 1 dB of final value. At Pout max Pout = 0 to 35 dBm Pin = 6 dBm Vramp = 0.2 to 1.8V
dBm % Ratio dBm
50 - - - - - - - -
- -5 -20 -36 -83 -73
dB dBm dBm dBm dBm
No Damage
Output Power Switching Speed
-
-
2
S
Mode: EDGE
Band: GSM900 Tx band (880-915 MHz)
Modulation: EDGE modulation (3/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement
Parameter
Duty Cycle Output Power Power Added Efficiency Low power current consumption mode (L) Gain
Test Conditions
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V) (Temp = 25C, Vcc = 3.5 V) Pout<16 dBm at Pout (H) at Low power current consumption mode (L)
Min
1/8 - -
Typ
1/4 29.0 27
Max
1/4 - - 200 36 25
Unit
dBm % mA dB
Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band At Max Po (Temp = 25C, Vcc = 3.5 V) VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 All Spurious (Load VSWR = 6:1 at all angles Po < 29, Pin < 8 dBm) Ftx = 890-915, Frx = 935-960 MHz Ftx = 880-890, Frx = 925-935 MHz (RBW = 100 KHz) Adjacent Channel Leakage Offset: 200 KHz Offset: 400 KHz Offset: 600 KHz Error Vector Magnitude Load 50
- -
- -
2.0:1 -5
Ratio dBm
No Damage - - - - - - - - - - - - - -65 -83 -73 -33 -57 -60 4 % dBc dBc dBm
4 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Electrical Specifications (Continued)
Mode: GMSK Band: DCS Tx band (1710-1785 MHz)
Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50, Pin = 3 dBm, Temperature = 25C, Duty Cycle = 25%
Parameter
Frequency Output Power
Test Conditions
DCS Temp = 25C, Vcc = 3.5 V Temp = 85C, Vcc = 2.9 V
Min
1710 32 29.5 +0
Typ
- 33 - +3 50 - -35 40 - - -
Max
1785 - - +6 - 2.5:1
Unit
MHz dBm
Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Harmonics Stability Noise Power Ruggedness Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50 load. Ftx = 1710-1785, Frx = 1805-1880 MHz (RBW = 100 KHz) Output VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50 load. RF Pout 5-35 dBm to within 1 dB of final value. At Pout max Pout = 0 to 35 dBm Pin = 6 dBm Vramp = 0.2 to 1.8 V
dBm % Ratio dBm
45 - - - - - -
- -5 -36 -77
dB dBm dBm dBm
No Damage
Output Power Switching Speed
-
-
2
S
Mode: EDGE
Band: DCS Tx band (1710-1785 MHz)
Modulation: EDGE modulation (3/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement
Parameter
Duty Cycle Output Power Power Added Efficiency Low power current consumption mode (L) Gain
Test Conditions
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V) (Temp = 25C, Vcc = 3.5 V) Pout<16 dBm at Pout (H) at Low power current consumption mode (L)
Min
1/8 - -
Typ
1/4 28 26
Max
1/4 - - 200 34 25
Unit
dBm % mA dB
Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage At Max Po (Temp = 25C, Vcc = 3.5 V) VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 All Spurious (Load VSWR = 6:1 at all angles Po < 28, Pin < 8 dBm) Ftx = 1710-1785, Frx = 1805-1880 MHz (RBW = 100 KHz) Offset: 200 KHz Offset: 400 KHz Offset: 600 KHz Error Vector Magnitude Load 50
- -
- -
2.0:1 -10
Ratio dBm
No Damage - - - - - - - - - - - -65 -77 -33 -57 -60 4 % dBc dBm dBc
5 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Electrical Specifications (Continued)
Mode: GMSK Band: PCS Tx band (1850-1910 MHz)
Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50, Pin = 3 dBm, Temperature = 25C, Duty Cycle = 25%
Parameter
Frequency Output Power
Test Conditions
PCS Temp = 25C, Vcc = 3.5 V Temp = 85C, Vcc = 2.9 V
Min
1850 32 29.5 +0
Typ
- 33 - +3 50 - -35 40 - - -
Max
1910 - - +6 - 2.5:1
Unit
MHz dBm
Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Harmonics Stability Noise Power Ruggedness Output Power Switching Speed Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50 load. Ftx = 1710-1785, Frx = 1805-1880 MHz(RBW = 100 KHz) Output VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50 load. RF Pout 5-35 dBm to within 1 dB of final value. At Pout max Pout = 0 to 35 dBm Pin = 6 dBm Vramp = 0.2 to 1.8 V
dBm % Ratio dBm
45 - - - - - -
- -5 -36 -77
dB dBm dBm dBm
No Damage - - 2 S
Mode: EDGE
Band: PCS Tx band (1850-1910 MHz)
Modulation: EDGE modulation (3/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577s, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement
Parameter
Duty Cycle Output Power Power Added Efficiency Low power current consumption mode (L) Gain
Test Conditions
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V) (Temp = 25C, Vcc = 3.5 V) Pout<16 dBm at Pout (H) at Low power current consumption mode (L)
Min
1/8 - -
Typ
1/4 28 26
Max
1/4 - - 200 34 25
Unit
dBm % mA dB
Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage At Max Po (Temp = 25C, Vcc = 3.5 V) VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 All Spurious (Load VSWR = 6:1 at all angles Po < 28, Pin < 8 dBm) Ftx = 1850-1910, Frx = 1930-1990 MHz (RBW = 100 KHz) Offset: 200 KHz Offset: 400 KHz Offset: 600 KHz Error Vector Magnitude Load 50
- -
- -
2.0:1 -5
Ratio dBm
No Damage - - - - - - - - - - - -65 -77 -33 -57 -60 4 % dBc dBm dBc
6 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
I/O Pin Description
Section
RF
Signal
LB RF IN HB RF IN LB RF OUT HB RF OUT
Pin(s)
7 1 14 8 4 12 10 2 3 5 6
Description
RF Input (Low Bands), DC Blocked within the part. RF Input (High Bands), DC Blocked within the part. RF Output (Low Bands), DC Blocked within the part. RF Output (High Bands), DC Blocked within the part. DC Supply for the Pre-Driver & Driver Stage of the PA's DC Supply for Final Stage (Low Bands) DC Supply for Final Stage (High Bands) Band Selection logic pin. A logic low selects the low band PA, and logic high selects the high band PA. PA enable line. A logic high enables the selected PA operation This pin selects either GMSK or 8PSK operation for the PA's. A logic low selects GMSK mode. A logic high selects 8PSK mode. In GMSK mode, the voltage on this pin controls the output power of the selected PA. In 8PSK mode, the voltage on this pin is a digital voltage selecting the normal or low power mode. Power Detector output voltage in EDGE mode Ground
Supply
VBATT LB VCC3 HB VCC3
Control
BAND_SEL TX EN VMODE VRAMP
Power Detection Ground
V_DET GND
11 9, 13
DC Control Requirements
DC Control Description
Supplies
Specification Signal Min
3.0 3.0 3.0 0 2.5
Typ
3.5 3.5 3.5 - - - - - -
Max
4.3 4.3 4.3 0.1 2.85 2.85 0.1 2.85 0.1 2.85 0.1
Unit
V V V V V V V V V V V
Conditions
Not Charging, RF On Not Charging, RF On Not Charging, RF On Band Select LOW Band Select HIGH Enabled Disabled Enabled (EDGE Mode) Disabled (GSM Mode) Normal EDGE operation Low power EDGE operation
VBATT LB VCC3 HB VCC3
Control
BAND SEL
TX EN
2.5 0.0
VMODE
2.5 0.0
VRAMP (EDGE only)
2.5 0
External Components
Type
Cap Cap Cap
Value
2.2 nF 2.2 F, 33 pF 2.2 F, 33 pF
Size
0402 0402 0402
Description
Vramp bypass HB VCC3 bypass LB VCC3 bypass
Pin
6 10 12
7 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
Closed Loop Power Control Data
Pout, PAE% vs. Vramp, GSM Mode
40 30 20 10 0 GSM Efficiency -10 GSM -20 -30 -40 -50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSet (Volts) DCS/PCS 20.00% 10.00% 0.00% DCS Efficiency 30.00% 40.00% Efficiency (%) 50.00% Pout (dBm) 80.00% 70.00% 60.00%
EDGE Mode PAE (Pout = 29 dBm, Pin = -12 dBm, Vcc = 3.5 V)
30.0
28.0 PAE (%) PAE (%) 26.0
24.0
22.0
20.0 800
820
840
860 Freq (MHz)
880
900
920
8 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
RF Detector (EDGE MODE)
Parameter Detector Voltage (VDET)
Case #1 Case #2 Case #3 No RF Applied Pout = 0 dBm Pout = 29 dBm
Limits Condition Min
45
Typ
50 0.1 1
Max
55
Units
mV V V
VDET vs. Power Output (EDGE MODE)
Po vs. Vdet
1.2 1.0
Vdet. (V)
0.8 0.6 0.4 0.2 0 -5 0 5 10 15 20 25 30 35
Po (dBm)
Dual Mode Operation
Input Mode of Operation
GMSK GMSK 8-PSK (Low Current) 8-PSK (High Current) 8-PSK (Low Current) 8-PSK (High Current)
Band
Low Band High Band Low Band Low Band High Band High Band
VRAMP VMODE Band_Set
Analog Analog 0 1 0 1 0 0 1 1 1 1 0 1 0 0 1 1
Output Power
0 to 34.5 dBm (Vramp = 0.2 to 1.6V) 0 to 32 dBm (Vramp = 0.2 to 1.6V) 0 dBm to TBD dBm TBD dBm to 29 dBm 0 dBm to TBD dBm TBD dBm to 28 dBm
Power On Sequence
GMSK Power On Sequence
Apply VCC3 and VBATT Apply Band Select VMODE (Low) Apply RF Apply TX EN & VRAMP in unison
EDGE Power on Sequence
Apply VCC3 and VBATT Apply Band Select VMODE (High) Apply RF Apply TX EN Set Vramp (Higyh or Low)
9 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
The Power Down sequence is in reverse order to the Power On Sequence.
(3.0V to 4.2V)
VBATT
2.8V
TX EN
VRAMP starts 1s after TX EN VRAMP settles at 0.2V 1s before TX EN goes low
0.2 to 1.6V
VRAMP
10 RMPA1852 Rev. C
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ADVANCED DATA SHEET
RMPA1852 Quad-Band GSM/EDGE PA Module
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
11 RMPA1852 Rev. C
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