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SERIES
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N431X is a one chip transistor with built-in bias resistor,PNP type is RT1P431X. RT1N431U
1.6
OUTLINE
DRAWING
RT1N431C
2.5
UNITmm
FEATURE
Built-in bias resistor (R1=4.7k,R2=4.7k).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3

0.95

2.9 1.90
1.6 1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
0.7 0.15 1.1 0.55 0.8 0.16
00.1
R1 B (IN) R2
C (OUT)
JEITA JEDEC Terminal Connector Base Emitter Collector
JEITASC-59 JEDECSimilar to TO-236 Terminal Connector Base Emitter Collector
E (GND)
RT1N431M RT1N431S
0.425 4.0 2.1 1.25 0.425
RT1N431T
00.1
Equivalent circuit
0.95
0.5
0.2
0.8
0.2
0.65
3.0
0.3
0.4

2.0 1.3
0.65
1.2 0.8
14.0
1.0
1.0
0.1 0.45
0.9
0.7
1.27 1.27 0.4
2.5
JEITA JEDEC Terminal Connector Emitter Collector Base
JEITASC-70 JEDEC Terminal Connector Base Emitter Collector
00.1
0.15
0.45
0.4
JEITA JEDEC Terminal Connector Base Emitter Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
0.4
SERIES
MAXIMUM RATING (Ta=25)
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current
Collector dissipation(Ta=25)
Transistor
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
RT1N431T
RT1N431U
RATING RT1N431M 50 10 50 100 200 150
RT1N431C
RT1N431S
UNIT V V V mA mA mW
125 +125 -55+125
125
450 +150 -55+150 LIMIT TYP
Junction temperature Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25)
SYMBOL PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
TEST CONDITION I C=100ARBE= VCB=50VI E =0 VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=0.2VI C =5mA VCE=5VI C =100A
MIN 50 20
MAX 0.1
UNIT V A V V V k MHz
0.8 3.3 0.8
VCE=6VI
E
=-10mA
0.1 1.4 1.1 4.7 1.0 200
0.3 2.3 6.1 1.2
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA G E V S. C OL L EC TOR C U R R EN T D C F OR W A R D C U R R EN T GA IN V S. C OL L EC TOR C U R R EN T
100
DC FORWARD CURRENT GAINh FE
1000 VCE=0.2V VCE=5V
INPUT ON VOLTEGEV I(ON)(V)
10
100
1 1 10 COLLECTOR CURRENTI C(mA)
C OL L EC TOR C U R R EN T V S. IN P U T OF F V OL TA GE
10 100 1 10 COLLECTOR CURRENTI C (mA) 100
1000
COLLECTOR CURRENT
VCE=5V
100
10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGEVI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Jan.2003

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