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| STS12NH3LL N-channel 30V - 0.008 - 12A - SO-8 Ultra low gate charge STripFETTM Power MOSFET General features Type STS12NH3LL VDSS 30V RDS(on) <0.0105 ID 12A Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low input capacitance Low threshold device SO-8 Description This series is based on the latest generation of ST's proprietary "STripFETTM" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications. Internal schematic diagram Applications Switching application Order codes Part number STS12NH3LL Marking S12NH3LL Package SO-8 Packaging Tape & reel March 2006 Rev 6 1/12 www.st.com 12 Contents STS12NH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS12NH3LL Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS(1) VGS(2) ID ID IDM (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at T C = 25C Operating junction temperature Storage temperature Value 30 16 18 12 7.5 48 2.5 -55 to 150 Unit V V V A A A W C PTOT TJ Tstg 1. Continuous mode 2. Guaranteed for test time < 15ms 3. Pulse width limited by safe operating area Table 2. Symbol Rthj-amb (1) Thermal resistance Parameter Thermal resistance junction-ambient Value 50 Unit C/W 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10sec 3/12 Electrical characteristics STS12NH3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 16V VDS= V GS, ID = 250A VGS= 10V, ID= 6A VGS= 4.5V, ID= 6A 1 0.008 0.010 0.0105 0.013 Min. 30 1 10 100 Typ. Max. Unit V A A nA V IGSS VGS(th) RDS(on) Table 4. Symbol gfs Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS =10V, ID = 12A Min. Typ. 38 965 285 38 9 3.7 3 12 Max. Unit S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=15V, ID = 12A VGS =4.5V (see Figure 7) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Gate Input Resistance 0.5 1.5 2.5 4/12 STS12NH3LL Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions VDD =15V, ID= 6A, RG=4.7, VGS=4.5V (see Figure 13) Min. Typ. 15 32 18 8.5 Max. Unit ns ns ns ns Table 6. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, VGS=0 ISD=12A, di/dt = 100A/s, VDD=20V, Tj=150C (see Figure 15) 24 17.4 1.45 Test condictions Min Typ. Max 12 48 1.3 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/12 Electrical characteristics STS12NH3LL 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS12NH3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit STS12NH3LL 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STS12NH3LL Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS12NH3LL SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS12NH3LL Revision history 5 Revision history Table 7. Date 22-Jun2004 03-Aug-2004 08-Mar-2005 17-Mar-2005 23-Jun-2005 30-Mar-2006 Revision history Revision 1 2 3 4 5 6 First Release Some value change in Table 1 Complete version Ron value change (see Table 3) New Rg value on Table 4 New template. Changes 11/12 STS12NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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