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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-670 To Order Previous Datasheet Index Next Data Sheet Bulletin I2071/A SD263C..S50L SERIES FAST RECOVERY DIODES Hockey Puk Version Features High power FAST recovery diode series 4.5 s recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125C 375A Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications case style DO-200AB (B-PUK) Major Ratings and Characteristics Parameters IF(AV) @ Ths IF(RMS) IFSM @ 50Hz @ 60Hz V RRM range trr @ TJ TJ SD263C..S50L 375 55 408 5500 5760 3000 to 4500 4.5 125 - 40 to 125 Units A C A A A V s C C D-671 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 30 SD263C..S50L 36 40 45 VRRM , maximum repetitive peak reverse voltage V 3000 3600 4000 4500 VRSM , maximum nonrepetitive peak rev. voltage V 3100 3700 4100 4600 IRRM max. @ TJ = TJ max. mA 50 Forward Conduction Parameter I F(AV) Max. average forward current @ Heatsink temperature I F(RMS) Max. RMS forward current I FSM Max. peak, one-cycle forward, non-repetitive surge current SD263C..S50L 375 (150) 55 (85) 725 5500 5760 4630 4850 Units A C A Conditions 180 conduction, half sine wave Double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms t = 8.3ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. A t = 10ms t = 8.3ms t = 10ms t = 8.3ms I2 t Maximum I2t for fusing 151 138 107 98 KA2s t = 10ms t = 8.3ms I 2 t Maximum I2t for fusing 1510 1.56 KA2s t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage r f1 V 1.71 (I > x IF(AV)),TJ = TJ max. (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. m 1.53 3.20 V (I > x IF(AV)),TJ = TJ max. I = 1000A, TJ = TJ max, t = 10ms sinusoidal wave pk p Low level value of forward slope resistance 1.64 r f2 High level value of forward slope resistance V FM Max. forward voltage drop Recovery Characteristics Code TJ = 25 oC typical t rr Test conditions I di/dt (*) V Max. values @ TJ = 125 C r pk t rr Q rr I rr @ 25% IRRM (s) Square Pulse (A) 1000 (A/s) 100 (V) - 50 @ 25% IRRM (s) 4.5 (C) 680 (A) 240 S50 5.0 (*) di/dt = 25A/us @ TJ = 25C D-672 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled D-675 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics D-676 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency Characteristics D-677 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Thermal and Mechanical Specifications Parameter TJ T stg SD263C..S50L -40 to 125 -40 to 150 0.11 0.05 9800 (1000) Units C Conditions Max. junction operating temperature range Max. storage temperature range RthJ-hs Max. thermal resistance, junction to heatsink F Mounting force, 10% K/W N (Kg) g DC operation single side cooled DC operation double side cooled wt Approximate weight Case style 230 DO-200AB (B-PUK) See outline table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction angle 180 120 90 60 30 Single Side Double Side 0.012 0.011 0.014 0.018 0.026 0.045 0.015 0.018 0.027 0.046 Rectangular conduction Units Single Side Double Side 0.008 0.008 0.014 0.019 0.027 0.046 0.014 0.019 0.028 0.046 K/W Conditions TJ = TJ max. Ordering Information Table Device Code SD 1 26 2 3 3 C 4 45 S50 5 6 L 7 1 2 3 4 5 6 7 - Diode Essential part number 3 = Fast recovery C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Ratings table) t rr code L = Puk Case DO-200AB (B-PUK) D-673 To Order Previous Datasheet Index Next Data Sheet SD263C..S50L Series Outline Table 3.5(0.14) DIA. NOM. x 1.8(0.07) DEEP MIN. BOTH ENDS 58.5 (2.3 0) D IA . M AX . Conforms to JEDEC DO-200AB (B-PUK) 0.8 (0.03) BOTH ENDS 34 (1.34) DIA. MAX. TWO PLACES All dimensions in millimeters (inches) 26.9 (1.06) 25 .4 (1) 53 (2.09) DIA. MAX. Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics D-674 To Order |
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