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| SDH02 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR PT Tj Tstg Ratings 120 100 6 1.5 NPN Darlington With built-in flywheel diode (Ta=25C) External dimensions E *** SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf fT Cob 100 2000 6000 1.1 1.7 0.5 4.5 1.2 50 20 12000 1.3 2.2 V V Specification min typ max 10 3 Unit (Ta=25C) Unit V V V A A A A A V W C C Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA VCC 30V, IC=1A, IB1=-IB2=2mA VCE=12V, IE=-0.1A VCB=10V, f=1MHz (Ta=25C) A mA V 2.5 (PW1ms, Du10%) 0.2 1.5 2.5 (PW0.5ms, Du10%) 120 3 (Ta=25C) 150 -40 to +150 s s s MHz pF sEquivalent circuit diagram 16 15 1 14 13 12 11 10 9 qDiode for flyback voltage absorption Symbol VR VF Specification min typ max 120 1.6 10 100 Unit V V Conditions IR=10A IF=1A VR=120V IF=100mA 3 5 7 IR 8 A ns R1 R2 4 2 R1: 2.5k typ R2: 200 typ 6 trr Characteristic curves IC-VCE Characteristics (Typical) 2.5 IB=10mA 4m A hFE-IC Characteristics (Typical) 10000 hFE-IC Temperature Characteristics (Typical) 10000 5000 =1 25 C 75 C (VCE=4V) typ (VCE=4V) 2m A 1.2 mA 0.6m A 5000 A 2.0 0.4m 0.3mA Ta 25 C 0 C IC (A) 1.5 hFE -3 1000 hFE 0.1 0.5 1 2.5 1000 500 1.0 500 0.5 0 1 2 3 4 5 6 100 0.03 0.05 100 0.03 0.05 0.1 0.5 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 3 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characteristics (Typical) 2.5 (IC / IB=1000) (VCE=4V) 2.0 2 VCE (sat) (V) VCE (sat) (V) 2 1.5 IC=2A IC=1A IC=0.5A IC (A) 1.0 1 25C -30C 1 Ta=125C 75C 0.5 0 0.2 0.5 1 2.5 0 0.1 0.5 1 5 10 50 100 0 0 1 Ta= 125 C 75C 25C -30C 2 3 IC (A) IB (mA) VBE (V) j-a-PW Characteristics 50 3 4 3 2 PT-Ta Characteristics 5 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation Safe Operating Area (SOA) 10 0 s 1m s 2 1 m 10 j-a (C / W) s PT (W) 10 1 5 1 0.1 0.05 Without Heatsink Single Pulse Ta=25C 1 1 5 10 50 100 500 1000 0 0 IC (A) 50 100 150 0.5 0.03 3 5 10 50 100 PW (mS) Ta (C) VCE (V) 166 |
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