 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMH2 NPN Silicon Digital Transistor Array Preliminary data * Switching circuit, inverter, interface circuit, driver circuit * Two ( galvanic) internal isolated Transistors with good matching in one package * Built in bias resistor (R1 =47k, R2=47k) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH2 Maximum Ratings Parameter Marking WE Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 C Junction temperature Storage temperature Thermal Resistance 50 50 10 50 70 250 150 -65 ... 150 V mA mW C Junction - soldering point1) RthJS 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2004 SEMH2 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 32 0.9 47 1 62 1.1 Vi(on) 1 3 Vi(off) 0.8 1.5 VCEsat 0.3 hFE 70 IEBO 164 ICBO 100 V(BR)EBO V(BR)CEO V(BR)CBO 50 50 typ. max. Unit V nA A V k - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 100 MHz 1) Pulse test: t < 300s; D < 2% 2 Mar-01-2004 SEMH2 DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 3 Mar-01-2004 SEMH2 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Mar-01-2004 |
Price & Availability of SEMH2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |