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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF9140J -18 AMPS -100 VOLTS 0.20 P-CHANNEL POWER MOSFET TO-257 Designer's Data Sheet FEATURES: * * * * * * * * * Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Replaces: IRF9140 Types TX, TXV, and Space Level Screening Available. Consult Factory. * MAXIMUM RATINGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation Single Pulse Avalanche Energy Repetitive Avalanche Energy PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE Symbol VDS VGS TC = 25 C TC = 100oC o Value -100 20 -18 -11 -55 to +150 2.0 63 48 500 12.5 Units Volts Volts Amps o o ID TOP & Tstg RJC C C/W TC = 25 C TC = 55oC o PD EAS EAR Watts mJ mJ SUFFIX JDB SUFFIX JUB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0015G DOC SFF9140J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Drain to Source Breakdown Voltage (VGS = 0 V, ID = 1 mA) Temperature Coefficient of Breakdown Voltage Drain to Source ON State Resistance (VGS = -10 V) Gate Threshold Voltage (VDS = VGS, ID = 250A) Forward Transconductance (VDS > 10V, IDS = 11A) Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS = 0 V) o (VDS = 80% rated VDS, VGS = 0 V, TA = 125 C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn ON Delay Time Rise Time Turn OFF Delay Time Fall TIme Diode Forward Voltage (IS = rated ID, VGS = 0 V, TJ = 25C) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ = 25 C IF = rated ID di/dt = 100 A/sec VGS = 0 Volts VDS = -25 Volts f = 1 MHz o Symbol BVDSS BVDSS TJ ID = 11A ID = 18A RDS(on) VGS(th) gfs IDSS IgSS Qg Qgs Qgd td(on)r tr td(off) tf VSD trr QRR Ciss Coss Crss Min -100 -- -- -- -2.0 6.1 -- -- -- -- 31 -- 7 -- -- -- -- -- -- -- -- -- -- Typ -- 0.087 0.15 -- -- 8.0 -- -- -- -- 50 3 25 15 8 35 20 -- 170 -- 1400 600 200 Max -- -- 0.20 0.23 -4.0 -- 25 250 -100 100 70 15 45 35 85 85 65 -4.2 280 3.6 1650 740 260 Unit Volts Volts Volts S mho A nA nC At rated VGS VGS = -10 Volts 50% rated VDS ID = -18 A) (VDD = 50% of rated VDS rated ID RG = 9.1 ) ns Volts ns C ns |
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