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SFH 309 P SFH 309 PFA NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 P SFH 309 PFA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 380 nm bis 1180 nm (SFH 309 P) und bei 880 nm (SFH 309 PFA) q Hohe Linearitat q 3 mm plane Plastikbauform im LED-Gehause q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und 380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA) q High linearity q 3 mm plane LED plastic package q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Typ (*vorher) Type (*formerly) SFH 309 P SFH 309 PFA (*SFH 309 PF) Bestellnummer Ordering Code Q62702-P245 Q62702-P246 Semiconductor Group 1 01.97 feof6445 feo06445 SFH 309 P SFH 309 PFA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit Top; Tstg TS C C TS 300 C VCE IC ICS Ptot RthJA 35 15 75 165 450 V mA mA mW K/W Semiconductor Group 2 SFH 309 P SFH 309 PFA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Symbol Symbol SFH 309 P S max 860 Wert Value SFH 309 PFA 900 nm nm Einheit Unit 380 ... 1180 730 ... 1120 Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0 0.045 0.45 x 0.45 0.4 ... 0.8 0.045 0.45 x 0.45 0.4 ... 0.8 mm2 mm x mm mm LxB LxW H 75 5.0 1 ( 200) 75 5.0 1 ( 200) Grad deg. pF nA CCE ICEO Semiconductor Group 3 SFH 309 P SFH 309 PFA Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309 P: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 20 A , Ee = 0.5 mW/cm2 Symbol Symbol Wert Value Einheit Unit IPCE IPCE tr, tf 63 420 6 A A s VCEsat 150 mV Directional characteristics Srel = f () Semiconductor Group 4 SFH 309 P SFH 309 PFA Relative spectral sensitivity, SFH 309 P Srel = f () Relative spectral sensitivity, SFH 309 PFA Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Photocurrent IPCE = f (VCE), Ee = Parameter Dark current ICEO = f (VCE), E = 0 Dark current ICEO = f (TA), VCE = 25 V, E = 0 Capacitance CCE= f (VCE), f = 1 MHz, E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Semiconductor Group 5 |
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