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Preliminary Data Sheet
Product Description
Sirenza Microdevices' SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that delivers high transimpedance, large dynamic range, and a typical bandwidth greater than 10.5GHz. Performance is enhanced through the use of a patented circuit topology that reduces duty cycle distortion under high photocurrent conditions and allows high transimpedance with low DC power to be realized. The SFT-0100 is supplied in bare die form and includes a current monitor feature that can be used for fiber alignment or loss of signal (LOS) detection.
SFT-0100
Transimpedance Amplifier
Chip Size: 1000um x 1000um x 100um
Functional Block Diagram
Vpin Vcc Imon
Product Features
Cfilter
Transimpedance Amplifier Rx
TIA Photo-detector DCDR* AMP1
OUTN
OUTP
* * * * * * * * * *
Low noise InGaP HBT technology Differential transimpedance ~ 2200 +5.0V power supply High sensitivity < 10pA Hz Adjustable dynamic range Low duty-cycle distortion Differential Outputs Photo current monitor Patented DCDR circuit Backside vias eliminate the need for ground wirebonds
CDCDR *Patented
Cext
Applications
* * * * * *
Optical Receiver Modules XFP, XENPAK, XPAK, X2 modules 9.953 Gb/s SONET OC-192/SDH STM-64 10.3 Gb/s Ethernet Applications 10.7 Gb/s ITU G.709 12.5 Gb/s SONET with FEC
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-102714 Rev. D
Preliminary Data Sheet SFT-0100 Transimpedance Amplifier
Absolute Maximum Ratings
Parameters Supply Current (ICC) Device Voltage (VCC) Maximum DC Input Current Operating Temperature (TOP) Storage Temperature Range Operating Junction Temperature (TJ) Value 60 6.0 5.0 0 to +85 -40 to +150 +150 Unit mA V mA C C C
R=15 C=0.26 pF L TIA
Model Used For Transimpedance Calculation
Product Specifications - Electrical
Parameters Differential Transimpedance Transimpedance Bandwidth (3dB) Gain Gain Ripple S21 3dB Bandwidth Group Delay Deviation Optical Sensitivity Optical Overload Input Equivalent Noise Current Density Maximum Output Voltage Swing Input DC Voltage Output DC Voltage Output Return Loss Supply Voltage Supply Current Power Dissipation Input Coupling Output Type Output Coupling Photodiode Current Monitor Dynamic Range Adjust See DCDR description Vcc=5.0V 50 termination to Vcc Single-ended, 50 In/Out Assume CD = 0.26pF, RD = 15, LINT = 1.0nH Assume CD = 0.26pF, RD = 15, LINT = 1.0nH Single-ended, 50 In/Out Single-ended, 50 In/Out Single-ended, 50 In/Out Single-ended, 50 In/Out, 30kHz - FC Assuming 0.9A/W responsivity, measured at 10-12 BER with a 231 -1 PRBS @ 10Gb/s Assuming 0.9A/W responsivity, measured at 10-12 BER with a 231 -1 PRBS @ 10Gb/s F = 7GHz Single-ended, 50 In/Out Unit GHz dB dB GHz ps dBm mA p-p pA Hz mV p-p V V dB V mA mW AC or DC SE or DF AC or DC 4.75 47 8 Min. 2000 9 26 Typ. 2200 10.5 27.5 1 9.5 30 -18.5 2.5 9 450 1.45 4.4 -10 5.0 52 260 DC DF AC or DC Yes Yes 5.25 55 30 Max. 2400
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com EDS-102714 Rev. D
Preliminary Data Sheet SFT-0100 Transimpedance Amplifier
Typical Electrical Performance
S 21 vs. Frequency
35 30 25 S21 (dB) 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 F req u en cy (G H z)
S11 (dB) 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 0 2 4 6 8 10 12 14 16 18 20 F re q u e n c y (G H z )
S 1 1 v s . F re q u e n c y
Transimpedance Gain
Cpd=0.26pF, Rd=15 , Lwb=1nH
65
S22 vs. Frequency
0 -5 -10 S22 (dB) -15 -20 -25 -30
Transimpedance (dB ohms)
63 61 59 57 55 53 51 49 47 45 0 2 4 6 8 10 12 14
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (G Hz)
Note: All electrical measurements performed using die probe station.
Optical Measurement Performance
SFT-0100 Optical Sensitivity
1.E-06
1.E-07
1.E-08
BER
1.E-09
1.E-10
1.E-11
1.E-12 -21
-20.75 -20.5 -20.25
-20
-19.75 -19.5 -19.25
-19
-18.75 -18.5 -18.25
-18
optical power, (dBm)
9.953Gb/s,-18dBm, PRBS31 Optical measurements courtesy of VSK Photonics
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-102714 Rev. D
Preliminary Data Sheet SFT-0100 Transimpedance Amplifier
Application Circuit
Vcc (5V) 0.1uF 1000pF 100pF Imon 100pF 1000pF 0.1uF RDCDR (1K-50K, optional)
GND
IMON
DCDR
GND OUTN
GND IN Zo = 50 IN
OUTN
Zo = 50
GND OUTP
GND
OUTP
Zo = 50
GND
VCC
CEXT
GND
Vcc (5V)
0.1uF
1000pF
100pF
100pF
1000pF 0.1uF
Description of External Connections and How They Operate
Imon: When tied to the supply voltage through an ammeter, the current through the ammeter "Imon" reflects the average photo diode current. The Imon current will be approximately the value of the average photo diode current and will be directly proportional to this quantity. Imon can be used for loss of signal detection or photodiode/fiber alignment in manufacturing. A third function this monitor can provide is the manual adjustment of the DCDR threshold. With no input photocurrent applied to the TIA, the Imon will give a finite quiescent current (uA). The finite current indicates that the automatic circuit has already started to turn on. By employing a shunt resistor (1K-50K) on the CDCDR port to ground, this threshold can be reduced (current can be reduced to a few uA) setting the automatic circuit for maximum sensitivity and dynamic range. DCDR (Duty Cycle Distortion Reduction): This patented feature compensates for the duty cycle distortion as a result of high input current seen by the amplifier. As the optical input power and induced photo current is increased, an automatic circuit is invoked to prevent distorted operation in the transistors of the TIA. The threshold input current where the circuit turns on can be adjusted by employing a shunt resistor to ground at the DCDR pin. The value of the shunt resistor can be set between 1K and 50K. The lower the value, the higher the input current
303 South Technology Court Broomfield, CO 80021
threshold in which the circuit turns on. In order to optimize for maximum sensitivity and dynamic range, the Imon current can be monitored while tuning this shunt resistor. Optimum sensitivity and dynamic range can be obtained by tuning the resistor value until only a few uA of Imon current is observed when there is no optical input power applied. CDCDR: An off chip capacitor is required in order to integrate and produce the automatic circuit control voltage. CEXT: An off chip capacitor sets the lower frequency of operation for the amplifier. For 30KHz operation and below, a 0.1uF capacitor is required. Wirebond length is critical and should be minimized. CVCC: An off chip bypass capacitor is required. Wirebond length is critical and should be minimized. Ground Wirebonds: The SFT-0100 has backside vias and backside metal. The bottom of the die must be electrically connected to ground using eutectic or conductive epoxy die attach methods. It is not recommended to attach any wirebonds to the top GND pads.
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-102714 Rev. D

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