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SGU2N60UFD
IGBT
SGU2N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A High input impedance CO-PAK, IGBT with FRD : trr = 45ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
I-PAK
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGU2N60UFD 600 20 2.4 1.2 10 1.5 12 25 10 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 5.0 5.0 110 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGU2N60UFD Rev. A1
SGU2N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---98 18 4 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 1.2A, RG = 200, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 1.2A, RG = 200, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
IF = 2A
Test Conditions TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 45 75 1.5 2.5 60 120
Max. 1.7 -80 -3.0 -135 --
Units V ns A nC
IF = 2A, di/dt = 200A/us
TC = 25C TC = 100C TC = 25C TC = 100C
(c)2002 Fairchild Semiconductor Corporation
SGU2N60UFD Rev. A1
SGU2N60UFD
12 Common Emitter T C = 25 10 20V
6 Common Emitter VGE = 15V TC = 25 TC = 125
5 15V
Collector Current, IC [A]
8 12V
Collector Current, IC [A]
8
4
6
3
VGE = 10V 4
2
2
1
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
3.0 Common Emitter V GE = 15V 2.5 2.4A
Collector - Emitter Voltage, VCE [V]
V CC = 300V Load Current : peak of square wave
3
Load Current [A]
2.0
1.2A 2 IC = 0.6A 1
1.5
1.0
0.5
0 0 30 60 90 120 150
0.0
Duty cycle : 50% TC = 100 Power Dissipation = 4W 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25 16
20 Common Emitter TC = 125
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8 2.4A 4 IC = 0.6A 0 1.2A
4 IC = 0.6A 0 0 4
1.2A
2.4A
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGU2N60UFD Rev. A1
SGU2N60UFD
160 Common Emitter V GE = 0V, f = 1MHz T C = 25 120 Cies
100 Common Emitter V CC = 300V, VGE = 15V IC = 1.2A T C = 25 T C = 125
Capacitance [pF]
80 Coes 40 Cres 0 1 10 30
Switching Time [ns]
Ton
Tr
10 10 100 500
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
600
Switching Time [ns]
Common Emitter V CC = 300V, V GE = 15V IC = 1.2A T C = 25 T C = 125
100 Common Emitter VCC = 300V, VGE = 15V IC = 1.2A TC = 25 TC = 125
Toff
Switching Loss [uJ]
Eon Eoff
Tf Toff 100
Eoff 10
Tf
50 10 100 500
5 10 100 500
Gate Resistance, RG [ ]
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100 Common Emitter V CC = 300V, V GE = 15V RG = 200 TC = 25 TC = 125
1000 Common Emitter VCC = 300V, VGE = 15V RG = 200 TC = 25 TC = 125 Toff Toff Tf Tf
Switching Time [ns]
Ton
Switching Time [ns]
100 1.5 2.0 2.5 0.5
Tr
10 0.5 1.0 1.0 1.5 2.0 2.5
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGU2N60UFD Rev. A1
SGU2N60UFD
100 Common Emitter V CC = 300V, VGE = 15V RG = 200 T C = 25 T C = 125
15 Common Emitter RL = 250 Tc = 25
Gate - Emitter Voltage, VGE [ V ]
12
Switching Loss [uJ]
9 300 V 6 V CE = 100 V 3 200 V
Eon Eon Eoff 10
Eoff 0.5 1.0 1.5 2.0 2.5
0 0 2 4 6 8 10
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
30 IC MAX. (Pulsed) 10 50us
20 10
Collector Current, I C [A]
100us IC MAX. (Continuous) 1 DC Operation 1
Collector Current, IC [A]
1
0.1
0.01
Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area VGE =20V, TC=100 C 0.1 1 10 100 1000
o
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [/W]
0.5 0.2 0.1 0.05 0.02 0.1 0.01
Pdm t1
1
single pulse
t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0.01 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1
SGU2N60UFD
30 TC = 25 TC = 100 10
10 V R = 200V IF = 2A T C = 25 T C = 100
1
0.1 0 1 2 3
Reverse Recovery Current, Irr [A]
1 100
Forward Current, I F [A]
500
Forward Voltage Drop, VFM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
120
100 V R = 200V IF = 2A T C = 25 T C = 100 V R = 200V IF = 2A TC = 25 TC = 100
Stored Recovery Charge, Qrr [nC]
80
Reverce Recovery Time, t rr [ns]
100
80
60
60
40
40
20
20
0 100 500
0 100
500
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGU2N60UFD Rev. A1
SGU2N60UFD
Package Dimension
I-PAK
6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20
0.60 0.20
0.70 0.20
0.80 0.10
6.10 0.20
1.80 0.20
MAX0.96 0.76 0.10
9.30 0.30
2.30TYP [2.300.20]
2.30TYP [2.300.20]
0.50 0.10
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1
16.10 0.30
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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