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| SI6421DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = - 4.5 V - 12 0.0135 @ VGS = - 2.5 V 0.0175 @ VGS = - 1.8 V D TrenchFETr Power MOSFET ID (A) - 9.5 - 8.5 - 7.3 APPLICATIONS D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6421DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs - 12 "8 - 9.5 Steady State Unit V - 7.5 -6 - 30 A - 0.95 1.08 0.69 - 55 to 150 W _C ID IDM IS PD TJ, Tstg - 7.5 - 1.5 1.75 1.14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72125 S-03296--Rev. A, 03-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 55 95 38 Maximum 70 115 50 Unit _C/W C/W 1 SI6421DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 550 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 9.5 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 8.5 A VGS = - 1.8 V, ID = - 7.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 9.5 A IS = - 1.5 A, VGS = 0 V 20 0.008 0.0105 0.0135 50 - 0.64 - 1.1 0.0105 0.0135 0.0175 S V W - 0.40 - 0.8 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.5 A, di/dt = 100 A/ms VDD = - 10 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 5 V, ID = - 9.5 A 60 8 16 4.3 46 92 235 165 140 70 140 350 250 210 ns W 90 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 2 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Transfer Characteristics 24 1.5 V 24 16 16 TC = 125_C 8 25_C 8 1.0 V 0 0 1 2 3 4 5 - 55_C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 72125 S-03296--Rev. A, 03-Mar-03 2 SI6421DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 6500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.020 VGS = 1.8 V 0.015 VGS = 2.5 V 0.010 VGS = 4.5 V 0.005 5200 Ciss 3900 2600 Coss 1300 Crss 0.000 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 9.5 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 9.5 A 1.4 4 r DS(on) - On-Resistance (W) (Normalized) 28 42 56 70 5 1.2 3 1.0 2 1 0.8 0 0 14 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.04 0.05 On-Resistance vs. Gate-to-Source Voltage 0.03 ID = 9.5 A 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72125 S-03296--Rev. A, 03-Mar-03 www.vishay.com 3 SI6421DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 160 0.2 V GS(th) Variance (V) Power (W) 0.1 - 0.0 - 0.1 - 0.2 - 0.3 - 0.4 - 50 0 10 -3 ID = 550 mA 120 200 Single Pulse Power, Junction-to-Ambient 80 40 - 25 0 25 50 75 100 125 150 10 -2 10 -1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 72125 S-03296--Rev. A, 03-Mar-03 SI6421DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72125 S-03296--Rev. A, 03-Mar-03 www.vishay.com 5 |
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