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| SI6862DQ New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Current Sense PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.026 @ VGS = 4.5 V 0.036 @ VGS = 2.5 V ID (A) 6.6 5.6 D KELVIN TSSOP-8 D S1 SENSE1 G 1 2 3 4 Top View G D 8 D S2 SENSE2 KELVIN 7 6 5 S1 SENSE1 S2 SENSE2 SI6862DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 6.6 5.2 30 1.5 1.8 1.1 Steady State Unit V 5.2 4.2 A 0.9 1.1 0.7 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71145 S-00717--Rev. B, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 93 36 Maximum 70 110 45 Unit _C/W 2-1 SI6862DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.2 A VGS = 2.5 V, ID = 4.4 A VDS = 10 V, ID = 5.2 A IS = 0.9 A, VGS = 0 V 30 0.022 0.029 23 0.8 1.2 0.026 0.036 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, VDS = 10 V, VGS = 4 5 V ID = 5 2 A V 4.5 V, 5.2 25 3.7 8.1 25 40 80 45 40 50 80 160 90 80 ns 40 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 24 30 Transfer Characteristics TC = -55_C 25_C 18 2V 12 18 125_C 12 6 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71145 S-00717--Rev. B, 03-Apr-00 SI6862DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance 0.05 C - Capacitance (pF) 2000 Ciss 1500 0.04 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 1000 Coss 500 Crss 0.01 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.2 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.2 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 1.2 2 1.0 1 0.8 0 0 5 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.06 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.05 ID = 5.2 A 0.04 0.03 TJ = 25_C 0.02 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 71145 S-00717--Rev. B, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 2-3 SI6862DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 25 ID = 250 mA 20 -0.0 Power (W) Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) 15 -0.2 10 -0.4 5 -0.6 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71145 S-00717--Rev. B, 03-Apr-00 SI6862DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Sense Current 12 r DS(on) - On-Resistance ( W ) 25 Vishay Siliconix SENSE DIE On-Resistance vs. Gate-to-Source Sense Voltage 9 VGS = 2.5 V r DS(on) - On-Resistance ( W ) 20 ISENSE = 10 mA 15 6 VGS = 4.5 V 10 3 5 0 0 0.02 0.04 0.06 0.08 0.10 0 0 1 2 3 4 5 ISENSE - Sense Current (A) VGSS - Gate-to-Source Sense Voltage (V) Current Ratio (IMAIN/IS) vs. Gate Voltage (Channel-1) 1000 RS = 17.97 W 14.96 W 800 9.97 W Ratio 2000 2500 Current Ratio (IMAIN/IS) vs. Gate Voltage (Channel-2) RS = 14.96 W 9.97 W 1500 4.73 W 1.06 W 500 Kelvin and Source Pins Are Separated Ratio 600 400 4.73 W 1.06 W 1000 200 0 0 3 6 VG (V) 9 12 0 0 3 6 VG (V) 9 12 Document Number: 71145 S-00717--Rev. B, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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