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| SI7483DP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --30 30 FEATURES ID (A) --24 --17 rDS(on) () 0.005 @ VGS = --10 V 0.0095 @ VGS = --4.5 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching -- Notebook Computers -- Notebook Battery Packs PowerPAKt SO-8 S 6.15 mm S 1 2 S 3 S 5.15 mm G 4 G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State --30 Unit V 20 --24 --19 --60 --4.5 5.4 3.4 --55 to 150 --1.6 1.9 1.2 W _C --14 --11 A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71940 S-21441--Rev. A, 19-Aug-02 www.vishay.com t 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W C/ 1 SI7483DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 20 V VDS = --24 V, VGS = 0 V VDS = --24 V, VGS = 0 V, TJ = 70_C VDS = --5 V, VGS = --10 V VGS = --10 V, ID = --24 A VGS = --4.5 V, ID = --17 A VDS = --15 V, ID = --24 A IS = --2.9 A, VGS = 0 V --30 0.0041 0.0077 70 --0.75 --1.1 0.005 0.0095 --1.0 --3.0 100 --1 --10 V nA mA A S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = --2.9 A, di/dt = 100 A/ms VDD = --15 V, RL = 15 ID --1 A, VGEN = --10 V, RG = 6 VDS = --15 V, VGS = --10 V, ID = --24 A 120 18.3 33.2 25 40 220 125 4 87 135 40 65 350 200 ns ns 180 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 10 Output Characteristics VGS = 10 thru 4 V 60 50 40 30 20 10 3V 0 0.0 Transfer Characteristics I D -- Drain Current (A) I D -- Drain Current (A) TC = 125_C 25_C --55_C 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 71940 S-21441--Rev. A, 19-Aug-02 2 SI7483DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 Vishay Siliconix On-Resistance vs. Drain Current 10000 Capacitance r DS(on) -- On-Resistance ( ) 0.008 VGS = 4.5 V C -- Capacitance (pF) 8000 Ciss 0.006 VGS = 10 V 0.004 6000 4000 0.002 2000 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) 10 V GS -- Gate-to-Source Voltage (V) VDS = 15 V ID = 24 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 24 A 6 r DS(on) -- On-Resistance () (Normalized) 40 60 80 100 120 8 1.4 1.2 4 1.0 2 0.8 0 0 20 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.020 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) -- On-Resistance ( ) 0.016 I S -- Source Current (A) 0.012 ID = 24 A 0.008 0.004 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD -- Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS -- Gate-to-Source Voltage (V) Document Number: 71940 S-21441--Rev. A, 19-Aug-02 www.vishay.com 3 SI7483DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 0.0 --0.2 --0.4 --50 40 ID = 250 mA Power (W) 120 200 Single Pulse Power 160 80 --25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ -- Temperature (_C) 100 Limited by rDS(on) 10 I D -- Drain Current (A) Safe Operating Area 1 ms 10 ms 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 1 0.01 0.1 1 10 100 VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 71940 S-21441--Rev. A, 19-Aug-02 SI7483DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71940 S-21441--Rev. A, 19-Aug-02 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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