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V di/dt=1000 A/s 3000 A/s 5000 A/s 9*( 9 10 8 1,5 6 1 4 0,5 ICpuls/IC 0 0 VCE 200 400 600 800 1000 1200 1400 V / Q+ ,& $ allowed numbers of short circuits: <1000 time between short circuits: >1s 2 ICSC/IC 0 0 VCE 200 400 600 800 1000 1200 1400 V )LJ 7XUQRII VDIH RSHUDWLQJ DUHD 5%62$ % )LJ 6DIH RSHUDWLQJ DUHD DW VKRUW .LU.XLW ,& I 9&( E\ 6(0,.521 6.0 *$ ' M600GA124.XLS-8 800 A 700 600 500 400 300 200 100 IC 0 0 TC 20 40 60 80 100 120 140 160 C 7M & 9*( 9 )LJ 5DWHG .XUUHQW YV WHPSHUDWXUH ,& M600GA124.XLS-9 I 7& 1200 A 1000 17V 15V 13V 11V 9V 7V M600GA124.XLS-10 1200 A 1000 17V 15V 13V 11V 9V 7V 800 800 600 600 400 400 200 IC 0 0 VCE 1 2 3 4 V 5 200 IC 0 0 VCE 1 2 3 4 V 5 )LJ 7\S RXWSXW .KDUD.WHULVWL. WS V & )LJ 7\S RXWSXW .KDUD.WHULVWL. WS 1200 V & M600GA124.XLS-12 3.RQG W 9&(VDW W 9&( 72 7M 9&(VDW W A ,& W 9&( 72 7M A 1000 U&( 7M A ,& W 800 7M >9@ 7M >@ 7M >@ >9@ ,& ,&QRP 600 W\S U&( 7M PD[ U&( 7M YDOLG IRU 9*( 400 200 IC 0 0 VG 2 4 6 8 10 12 V 14 )LJ 6DWXUDWLRQ .KDUD.WHULVWL. ,*%7 &DO.XODWLRQ HOHPHQWV DQG HTXDWLRQV E\ 6(0,.521 )LJ 7\S WUDQVIHU .KDUD.WHULVWL. WS V 9&( 9 % 6.0 *$ ' M600GA124.XLS-13 M600GA124.XLS-14 20 V 18 16 14 800V 12 10 8 6 4 VGE 2 0 0 QGate 1000 2000 3000 nC 600 ICpuls = 400 A 100 nF Cies VGE = 0 V f = 1 MHz 10 Coes C Cres 1 4000 0 VCE 10 20 V 30 Fig. 13 Typ. gate charge characteristic M600GA124.XLS-15 Fig. 14 Typ. capacitances vs.VCE M600GA124.XLS-16 10000 ns 1000 tdoff Tj = 125 C VCE = 600 V VGE = 15 V RGon = 4 RGoff = 4 induct. load 10000 ns tdoff 1000 tdon Tj = 125 C VCE = 600 V VGE = 15 V IC = 400 A induct. load 100 tr tdon tf tr 100 tf t 10 0 IC 200 400 600 800 A 1000 t 10 2 RG 4 6 8 10 12 Fig. 15 Typ. switching times vs. IC M600GA124.XLS-17 Fig. 16 Typ. switching times vs. gate resistor RG M600GA124.XLS-18 800 A 600 Tj=125C, typ. Tj=25C, typ. Tj=125C, max. Tj=25C, max. 40 mJ 35 30 25 20 15 R G= 4 5 VCC = 600 V Tj = 125 C VGE = 15 V 400 10 200 IF 0 0 VF 1 2 V 3 10 5 0 0 IF 200 400 600 800 A 1000 EoffD Fig. 17 Typ. CAL diode forward characteristic % Fig. 18 Diode turn-off energy dissipation per pulse E\ 6(0,.521 SKM 600 GA 124 D 0,1 K/W 0,01 M600GA124.XLS-19 0,1 K/W M600GA124.XLS-20 0,01 D=0,5 0,2 0,1 0,05 0,02 0,01 0,001 0,0001 single pulse ZthJC 0,00001 0,00001 0,0001 tp D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 ZthJC 0,0001 0,00001 single pulse 0,001 0,01 0,1 s 1 tp 0,0001 0,001 0,01 0,1 s 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f 500 A 400 4 5 300 10 200 M600GA124.XLS-22 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f 9&& 9 7M & 9*( 9 600 A 500 RG 4 400 5 M600GA124.XLS-23 RG 9&& 9 7M & 9*( 9 ,) $ 300 10 200 100 IRR 0 0 IF 200 400 600 800 A 1000 100 IRR 0 0 diF/dt 2000 4000 6000 8000 A/s Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 120 C 100 10 400 A 60 300 A 200 A 40 100 A 20 Qrr 0 0 1000 diF/dt 2000 3000 4000 5000 6000 A/s M600GA124.XLS-24 Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (diF/dt; RG) R G= 5 4 IF= 800 A 9&& 9 7M & 9*( 9 80 Fig. 24 Typ. CAL diode recovered charge QRR = f (diF/dt; IF; RG (c) by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|
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