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| SPP80N03 SIPMOS(R) Power Transistor Features * N channel * Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A Enhancement mode RDS(on) 0.006 * Avalanche rated * dv/dt rated * 175C operating temperature Type SPP80N03 SPB80N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4734-A2 Tube P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/s mJ Unit A ID TC = 25 C, 1) TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , Tstg 20 300 -55... +175 55/175/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPP80N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 0.5 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.0038 0.006 V Unit V(BR)DSS VGS(th) I DSS 30 2.1 VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage, VGS = VDS ID = 240 A Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 C VDS = 30 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 80 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPP80N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 93 3970 1920 775 22 max. 5000 2500 1000 33 ns S pF Unit g fs Ciss Coss Crss t d(on) 30 - VDS2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Rise time tr - 25 38 VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Turn-off delay time t d(off) - 55 85 VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Fall time tf - 40 60 VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Semiconductor Group 3 SPP80N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 20 51 112 4.7 max. 30 76.5 175 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 80 A Gate to drain charge VDD = 24 V, ID = 80 A Gate charge total VDD = 24 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 80 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.1 60 0.06 80 320 1.7 90 0.09 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 160 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s Semiconductor Group 4 SPP80N03 Power Dissipation Drain current Ptot = f (TC) SPP80N03 ID = f (TC ) parameter: VGS 10 V SPP80N03 320 W 90 A 240 70 60 Ptot ID 50 40 30 20 10 0 0 100 120 140 160 C 190 200 160 120 80 40 0 0 20 40 60 80 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 3 SPP80N03 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP80N03 K/W 10 0 A tp = 54.0s /I D ID R 10 2 DS (on ) =V 100 s Z thJC DS 10 -1 10 -2 D = 0.50 0.20 10 1 ms -3 0.10 0.05 0.02 10 -4 10 ms single pulse 0.01 10 1 -1 10 10 0 10 1 DC V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp SPP80N03 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPP80N03 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPP80N03 190 A Ptot = 300W jilg kh f e 0.019 a b c d 160 140 VGS [V] a 4.0 b 4.5 0.016 0.014 0.012 0.010 0.008 0.006 0.004 e f g hl kj i d ID 120 100 c d e f g h i j 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 80 60 b k l 40 20 a RDS(on) c 5.0 0.002 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 8.5 k l 9.0 10.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0.000 0 20 40 60 80 100 120 A 150 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 70 A Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 85 S 60 55 50 70 60 gfs V ID 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 6 50 40 30 20 10 0 0 10 20 30 40 A 60 VGS Semiconductor Group 6 ID SPP80N03 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V SPP80N03 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 240 A 5.0 V 4.4 0.015 0.012 4.0 VGS(th) RDS(on) 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0.000 -60 -20 20 60 100 140 C 3.6 3.2 2.8 98% 2.4 2.0 max typ 1.6 1.2 0.8 typ min 0.4 0.0 -60 200 -20 20 60 100 140 C 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 9500 pF Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP80N03 A 7500 6500 C 10 2 5500 4500 Ciss IF 3500 2500 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) Crss 1500 500 0 10 0 0.0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD SPP80N03 Avalanche Energy EAS = f (Tj) parameter: ID = 80 A, V DD = 25 V RGS = 25 700 mJ Typ. gate charge VGS = f (QGate ) parameter: ID puls = 80 A SPP80N03 16 V 600 550 500 450 400 350 300 250 200 4 150 100 50 0 20 40 60 80 100 120 140 C 12 VGS EAS 10 8 0,2 VDS max 0,8 VDS max 6 2 180 0 0 20 40 60 80 100 120 140 nC 170 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP80N03 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Semiconductor Group 8 SPP80N03 Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 |
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