 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT35P3 4 AMPS 60 VOLTS DUAL NPN DARLINGTON TRANSISTOR TO-3, 8 Leads Designer's Data Sheet * * * * * * * * FEATURES: Cost-Saving Monolithic Design with Associated Commutating Diodes in A Single Package: Reduced Size, Improved Efficiency High Current Gain Low Saturation Voltage High Energy Capability Electrically Isolated Case Hermetically Sealed 8 Pin TO-3 Package High Current Replacement for PIC6006 TX, TXV, and S-Level Screening Available. Consult Factory. APPLICATIONS: Full Wave Bridge Circuits for Converters and StepperMotor Drives * MAXIMUM RATINGS Collector - Emitter Voltage Collector - Base Voltage Collector Current Base Current Diode Average Forward Current Total Device Dissipation Operating and Storage Temperature Thermal Resistance, Junction to Case SCHEMATIC 1 2 7 8 o Symbol VCEO VCBO Continuous Peak IC ICM IB IO @ TC = 25 C Per Darlington PD TJ & Tstg Per Device Per Transistor RJC Value 60 60 4 8 0.2 2 60 30 -65 to +175 2.5 5.0 Units Volts Volts Amps Amps Amps Watts o C o C/W 3 6K 150 150 6K 6 4 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 5 DATA SHEET #: TR0080D DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT35P3 ELECTRICAL CHARACTERISTICS (Per Darlington) Collector - Emitter Sustaining Voltage * (Each Darlington) Collector - Base Breakdown Voltage * Collector Cutoff Current (VCE = 40 V) Emitter Cutoff Current (VBE = 5 V) DC Current Gain * (VCE = 5 V) Collector - Emitter Saturation Voltage * Base - Emitter Saturation Voltage * Commutating Diodes (Per Darlington) Break Down Voltage Reverse Leakage Current Forward Voltage Drop Reverse Recovery Time * IR = 100 A VR = 40 V o VR = 40 V, TC = 100 C IF = 2 A IF = 0.5 A, IR = 0.5 A, IRR = 0.25 A IC = 2 A, TA = 25 C o IC = 0.4 A, TA = -55 C IC = 2 A, IB = 4 mA IC = 2 A, IB = 4 mA o Symbol IC = 10 mA IC = 1 mA TC = 25 C o TC = 150 C o Min 60 60 -- -- Max -- -- 0.1 200 1.5 Unit Volts Volts A mA BVCEO BVCBO ICEO IEBO hFE VCE(SAT) VBE (SAT) Symbol BVR IR1 IR2 VF tRR 2000 100 -- -- Min 60 -- -- -- -- -- -- 1.5 2.0 Max -- 0.5 500 1.5 2 Volts Volts Unit Volts A A Volts s Pulse Test: Pulse Width = 300 sec max, Duty Cycle = 2% max PACKAGE OUTLINE: TO-3 (8 Pins) R.525 MAX .135 MAX O.505 .495 LEAD CIRCLE 40 REF R.188 MAX 67 O.875 MAX 5 4 32 8 1 80 REF 2x O.165 .151 .310 .275 .460 .215 8x O.043 .037 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0080D DOC |
Price & Availability of SPT35P3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |