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| polyfet rf devices SR705 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 410 Watts Junction to Case Thermal Resistance o 0.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 24.0 A RF CHARACTERISTICS ( 200.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 1.20 A, Vds = 28.0 V, F = Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz 400 MHz VSWR Relative Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 6.0 0.20 35.00 250.0 15.0 160.0 MIN 65 5.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 100.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.50 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 12.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SR705 POUT VS PIN GRAPH SR705 Pin vs Pout F=400 MHZ; IDQ=1.2A; VDS=28V 240 12 1000 CAPACITANCE VS VOLTAGE S1A 5 DICE CAPACITANCE 200 Ciss Pout 11 160 120 100 Gain 80 Efficiency = 55% 40 10 Coss Crss 0 0 5 10 15 PIN IN WATTS 20 25 30 9 10 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE S1A 5 DIE IV 40 35 30 ID IN AMPS 25 20 15 10 5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6vINVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 100.00 S1A 5 DIE ID & GM Vs VG Id in amps; Gm in mhos Id 10.00 gM 1.00 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
Price & Availability of SR705
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