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 VISHAY
SS2P2, SS2P3 & SS2P4
Vishay Semiconductors
High Current Density Surface Mount Schottky Barrier Rectifiers
Major Ratings and Characteristics
IF(AV) VRRM IFSM EAS VF Tj max. 2A 20 V, 30 V, 40 V 50 A 11.25 mJ 0.50 V 150 C
Features
* * * * * * * Very low profile - typical height of 1.0mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal resistance Meets MSL level 1 per J-STD-020C AEC-Q101 qualified
DO-220AA (SMP)
Typical Applications
For use in low voltage high frequency inverters, freewheelling, dc-to-dc converters, and polarity protection applications
Maximum Ratings
Device marking code RMS reverse voltage DC blocking voltage
TA = 25 C, unless otherwise specified Parameter
N ew
Pr od uc t
Mechanical Data
Symbol VRRM VR IF(AV) IFSM EAS dv/dt TJ, TSTG SS2P2 22 20 14 20 SS2P3 23 30 21 30 2.0 50 11.25 10000 -55 to +150 24 40 28 40 VRWM
Case: DO-220AA (SMP) Epoxy meets UL-94V-0 Flammability rating Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes the cathode end
SS2P4
Unit V V V A A mJ V/us C
Maximum repetive peak reverse voltage
Maximum average forward rectified current see Fig. 1 Peak forward surge current 10 ms single half sinewave superimposed on rated load Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 C Voltage rate of change (rated VR) Operating junction and storage temperature range
Document Number 88910 02-Nov-04
www.vishay.com 1
SS2P2, SS2P3 & SS2P4
Vishay Semiconductors Electrical Characteristics
TA = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage(1) Maximum reverse current at rated VRM(1) Typical junction capacitance Test condition at IF = 2 A, TJ = 25 C at IF = 2 A, TJ = 125 C TJ = 25 C TJ = 125 C at 4.0 V, 1 MHz Symbol VF IR CJ Typ 0.50 0.43 8 110
VISHAY
Max. 0.55 0.50 150 15
Unit V A mA pF
Notes: (1) Pulse test: 300s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 C, unless otherwise specified Parameter Typical thermal resistance(1) Symbol RJA RJL RJC SS2P2 SS2P3 115 15 20 SS2P4 Unit C/W
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RJL is measured at the terminal of cathode band. RJC is measured at the top centre of the body
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Document Number 88910 02-Nov-04
VISHAY
Ratings and Characteristics Curves
(TA = 25 C unless otherwise specified)
2.4
SS2P2, SS2P3 & SS2P4
Vishay Semiconductors
Instantaneous Reverse Leakage Current (A)
100000 TJ = 150C
Average Forward Rectified Current (A)
2.0 1.6 1.2 0.8 TL measured at the cathode band terminal 0.4 0 80 90 100 110 120 130 140 150
10000 TJ = 125C
1000
100 10 1 0.1 10 20 30 40 50 60 70 80 90 100 TJ = 25C
Lead Temperature (C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
50
1000
Peak Forward Surge Current (A)
40
30
Junction Capacitance (pF)
1 10 100
100
20
10 0
1 0.1 1 10 100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
1000
10
TJ = 150C
Transient Thermal Impedance (C/W)
Instantaneous Forward Current (A)
100
1
TJ = 25C
10
TJ = 125C 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3
1 0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t, Pulse Duration (sec.)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal impedance
Document Number 88910 02-Nov-04
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SS2P2, SS2P3 & SS2P4
Vishay Semiconductors Package Dimensions in Inches (millimeters)
DO-220AA (SMP) Cathode band 0.012 (0.30) REF
VISHAY
0.086 (2.18) 0.074 (1.88)
0.053 (1.35) 0.041 (1.05)
0.036 (0.91) 0.024 (0.61)
0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70)
0.103 (2.60) 0.087 (2.20)
0.032 (0.80) 0.016 (0.40)
0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) 0.100 (2.54) 0.018 (0.45) 0.006 (0.15)
0.025 (0.635)
0.030 (0.762)
0.050 (1.27)
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Document Number 88910 02-Nov-04


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