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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT 23 SS8550LT1 TRANSISTORPNP (c) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25ae(c) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit : mm ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current unless otherwise Test specified(c) MIN -40 -25 -5 -0.1 -0.1 -0.1 120 40 -0.5 -1.2 100 V V MHz 350 MAX UNIT V V V |I A |I A |I A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 conditions Ic= -100 |I A IE=0 Ic= -0.1mAIB=0 IE= -100 |I AIC=0 VCB= -40 V , IE=0 VCE= -20 V , IB=0 VEB= -5V , IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC=-800 mA, IB= -80m A IC=-800 m A, IB= -80m A VCE= -10V, I = -50mA C DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT f=30MHz H CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING SS8550LT1=Y2 L 120- 200 200- 350 SOT-23 PACKAGE OUTLINE DIMENSIONS D b |E 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 |
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