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| SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Management Switch DC-DC Converters * * * Suitable for high-density mounting due to compact package Low on Resistance : Ron = 145 m (max) (@VGS = -4.5 V) : Ron = 85 m (max) (@VGS = -10 V) High-speed switching Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse PD Symbol VDS VGSS ID IDP (Note 2) t = 10 s (Note 1) Tch Tstg Rating -30 20 -2.7 -5.4 1.25 0.7 150 -55 to 150 A Unit V V Drain power dissipation Channel temperature Storage temperature range W C C JEDEC JEITA TOSHIBA 2-3S1A Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by maximum channel temperature. Weight: 10 mg (typ.) Marking 3 Equivalent Circuit 3 KDL 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account 1 2002-04-17 SSM3J14T Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| Test Condition VGS = 16 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = 20 V VDS = -30 V, VGS = 0 VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID = -1.35 A ID = -1.35 A, VGS = -10 V Drain-source on resistance RDS (ON) (Note 3) (Note 3) Min 3/4 -30 -15 3/4 -0.8 2.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 Max 1 3/4 3/4 -1 -2.0 3/4 85 145 170 3/4 3/4 3/4 3/4 3/4 pF pF pF ns mW Unit mA V V mA V S 3/4 63 106 120 413 77 113 29 29 ID = -1.35 A, VGS = -4.5 V (Note 3) ID = -1.35 A, VGS = -4.0 V (Note 3) Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -1 A VGS = 0~-4 V, RG = 10 W Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 -4 V 10 ms VDD OUT VDD = -10 V RG = 4.7 W D.U. < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C (b) VIN 0V 10% 90% IN RG -4 V VDS (ON) 90% tr ton 10% (c) VOUT VDD tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -4 V or higher to turn on this product. 2 2002-04-17 SSM3J14T ID - VDS -6 -10 V -5 V -4 V -3.5 V -1000 -10000 Common source VDS = -5 V ID - VGS (mA) (A) Common source Ta = 25C -4 -3 V -100 Ta = 25C ID Drain current ID Drain current -10 100C -25C -2 VGS = -2.5V -1 -0.1 0 0 -0.5 -1 -1.5 -2 -0.01 0 -1 -2 -3 -4 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) -ID 300 Common source 250 Ta = 25C 1000 RDS (ON) - VGS Common source ID = -1.35 A Drain-Source on resistance RDS (ON) (mW) 200 VGS = -4 V Drain-Source on resistance RDS (ON) (mW) 150 100 25C Ta = 100C 100 -4.5 V -25C 50 -10 V 10 0 0 0 -1 -2 -3 -4 -5 -6 -7 -5 -10 -15 -20 Drain current ID (A) Gate-source voltage VGS (V) RDS (ON) - Ta 300 Common source 250 ID = -1.35 A 10 |Yfs| - ID Drain-Source on resistance RDS (ON) (mW) Forward transfer admittance |Yfs| (S) 3 200 VGS = -4 V 150 -4.5 V 1 100 -10 V 50 0.3 0.1 Common source VDS = -5 V Ta = 25C -0.1 -1 -10 0 -25 0 25 50 75 100 125 150 0.03 -0.01 Ambient temperature Ta (C) Drain current ID (A) 3 2002-04-17 SSM3J14T Vth - Ta -1.8 -1.6 Common source VDS = -5 V ID = -0.1 mA 700 C - VDS Common source 600 VGS = 0 f = 1 MHz Ta = 25C (V) Gate threshold voltage Vth (pF) Capacitance C -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 500 400 300 200 100 0 0 Ciss Coss Crss -5 -10 -15 -20 -25 -30 -35 100 125 150 Ambient temperature Ta (C) Drain-source voltage VDS (V) t - ID 1000 Common source VDD = -15 V VGS = 0~-4 V Ta = 25C RG = 10 W -3 Common source VGS = 0 Ta = 25C -2 IDR - VDS (A) (ns) 300 D Drain reverse current IDR G S t Switching time 100 tf 30 ton 10 tr 3 -0.01 toff -1 -0.1 -1 -10 Drain current ID (A) 0 0 0.2 0.4 0.6 0.8 1 Drain-source voltage VDS (V) Dynamic input characteristic -10 Common source 1.5 PD - Ta Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2 1 (V) -8 Ta = 25C -12 V VGS Gate-source voltage -6 Drain power dissipation VDD = -24 V PD (W) ID = -2.7 A t = 10 s DC -4 0.5 -2 0 0 2 4 6 8 10 12 0 0 50 100 150 200 Total gate charge Qg (nC) Ambient temperature Ta (C) 4 2002-04-17 SSM3J14T rth - tw 300 Transient thermal impedance Single pulse 100 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm ) rth (C /W) 30 10 3 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -10 ID max (pulse) I max (continuous) -3 D 1 ms* 10 ms* (A) -1 DC operation Ta = 25C Drain current ID 10 s* -0.3 Mounted on FR4 board -0.1 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm2) -0.03 *: Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.3 -1 -3 -10 -30 -0.01 -0.1 VDSS max -100 Drain-source voltage VDS (V) 5 2002-04-17 SSM3J14T RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-04-17 |
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