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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-460 To Order Previous Datasheet Index Next Data Sheet Bulletin I25179/B ST183S SERIES INVERTER GRADE THYRISTORS Stud Version Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 195A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ ST183S 195 85 306 4900 5130 120 110 400 to 800 10 to 20 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AB (TO-93) D-461 To Order Previous Datasheet Index Next Data Sheet ST183S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V ST183S 04 08 400 800 VRSM , maximum non-repetitive peak voltage V 500 900 I DRM /I RRM max. @ TJ = TJ max. mA 40 Current Carrying Capability Frequency 180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 570 560 500 340 50 V DRM 50 60 o ITM 180 el 370 360 300 190 50 50 85 900 940 925 760 50 V DRM 60 o ITM 100s 610 630 610 490 50 85 7040 3200 1780 880 50 V DRM 60 ITM Units 5220 2280 1200 560 50 85 V A/s C A 47 / 0.22F 47 / 0.22F 47 / 0.22F On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST183S 195 85 306 4900 5130 4120 4310 Units A C Conditions 180 conduction, half sine wave DC @ 74C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max I2 t Maximum I2t for fusing 120 110 85 78 I 2 t Maximum I2t for fusing 1200 t = 0.1 to 10ms, no voltage reapplied D-462 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-466 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics D-467 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-468 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-469 To Order Previous Datasheet Index Next Data Sheet ST183S Series On-state Conduction Parameter V TM Max. peak on-state voltage ST183S 1.80 1.40 1.45 0.67 Units Conditions ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse p V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r r t1 V (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current m 0.58 600 1000 mA t2 IH IL T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST183S 1000 1.1 Min 10 Max 20 Units A/s Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s p Typical delay time s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, t = 500s, dv/dt: see table in device code p t q Max. turn-off time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST183S 500 40 Units V/s mA Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST183S 60 10 10 20 Units W A Conditions TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms p PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger V 5 200 3 20 0.25 mA TJ = TJ max, t 5ms p TJ = TJ max, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied D-463 To Order Previous Datasheet Index Next Data Sheet ST183S Series Thermal and Mechanical Specifications Parameter TJ T stg ST183S -40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210) Units C Conditions Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10% RthJC RthCS T DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased wt Approximate weight Case style 280 TO-209AB (TO-93) RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction 0.016 0.019 0.025 0.036 0.060 Rectangular conduction Units 0.012 0.020 0.027 0.037 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 18 2 3 3 S 4 08 5 P 6 F 7 N 8 0 9 10 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) q dv/dt - tq combinations available dv/dt (V/s) 10 12 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN * FM FL * FP FK 400 HN HM HL HP HK t (s) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) *Standard part number. All other types available only on request. D-464 To Order Previous Datasheet Index Next Data Sheet ST183S Series Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. N. (0. 9 .5 37 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. C.S. 16mm 2 RED SILICON RUBBER 1 57 (6.18 ) 17 0 (6 .6 9 ) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 (.025 s.i.) 20 (0. FLEXIBLE LEAD 79 )M IN . )M I Fast-on Terminals AMP. 280000-1 REF-250 215 (8.46) 70 ( 2.75 ) M IN . RED SHRINK 2 9 (1 .1 4) M A X. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 1 2.5 ( 0.49 ) M A X . 2 1 (0 .8 3) M A X. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) CERAMIC HOUSING FLAG TERMINALS 22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 1 3 ( 0.5 1 ) 8 0 ( 3 .1 5 ) M A X . 1.5 (0.06) DIA. 38 .5 (1 .5 2 ) M A X . DIA. 27.5 (1.08) MAX. 2 7 .5 (1 .08 ) M A X . 1 6 (0 .63 ) M A X . Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) D-465 To Order |
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