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Bulletin I25169 rev. C 04/00
ST380CH..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Extended temperature range
960A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
case style TO-200AB (E-PUK)
Units
A C A C A A KA2s KA2s V s C
ST380CH..C
960 80 2220 25 12500 13000 782 713 400 to 600
@ 50Hz @ 60Hz
V DRM/V RRM tq TJ typical
100 - 40 to 150
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST380CH..C 06
V DRM/V RRM, max. repetitive peak and off-state voltage V
400 600
VRSM , maximum nonrepetitive peak voltage V
500 700
I DRM /I RRM max.
@ TJ = TJ max
mA
100
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST380CH..C
960 (440) 80 (110) 2220 12500 13000 10500 11000
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2t for fusing
782 713 553 505
I 2 t
Maximum I2t for fusing
7820 0.85
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 0.88 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.24 1.58 600 mA 1000 T J = 25 C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 2900A, TJ = TJ max, t = 10ms sine pulse
pk p
0.25
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST380CH..C
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, t 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s
g r
Typical delay time Typical turn-off time
s tq 100
V = 0.67% VDRM, TJ = 25C
d
ITM = 550A, TJ = T J max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s
p
2
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST380CH..C
500 100
Units Conditions
V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
ST380CH..C
10.0 2.0 3.0 20
Units Conditions
W A T J = TJ max, t 5ms
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 40 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.0
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
T J = - 40C T J = 25C T J = 150C T J = - 40C T J = 25C T J = 150C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST380CH..C
-40 to 150 -40 to 150 0.09 0.04 0.02 0.01 9800 (1000)
Units
C
Conditions
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
K/W N (Kg) g
wt
Approximate weight Case style
83
TO - 200AB (E-PUK)
See Outline Table
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.010 0.012 0.015 0.022 0.036 0.011 0.012 0.015 0.022 0.036
Rectangular conduction
Single Side Double Side 0.007 0.012 0.016 0.023 0.036 0.007 0.013 0.017 0.023 0.037
Units
Conditions
TJ = TJ max.
K/W
Ordering Information Table
Device Code
ST
1
38
2
0
3
CH
4
06
5
C
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade CH = Ceramic Puk, High temperature Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (E-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN.
14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
25 5
42 (1.65) MAX. 28 (1.10)
Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
M a xim u m A llo w ab le H e at sin k T e m p e ra t u re (C )
M a xim u m A llo w a b le H e at sin k T e m p e ra t ure (C )
15 0 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 0
ST 3 8 0 C H ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K /W
Co n duc tio n Ang le
3 0
60 90 1 20 18 0
150 140 130 120 110 100 90 80 70 60 50 40 30 20 0 200
ST 3 8 0 C H..C Se rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W
C on duc tio n Pe rio d
30
60 90 120 180 DC
10 0 20 0 3 0 0 4 0 0 5 00 60 0 70 0 80 0 A v e ra g e O n - st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
40 0
600
8 00 10 0 0 1 20 0 1 4 00
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
Maximum Allowable Heatsin k Tem perature (C) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 0 M a xim u m A llo w a b le H e a ts in k T e m p e r at u re ( C ) 1 50 1 40 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0
ST380CH..C Series (Double Sid e Cooled) R th J- hs (DC) = 0.04 K/W
ST 3 8 0 C H..C Se rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 4 K / W
C o nduc tio n A ng le
C o nduc tio n Pe riod
30
30 60 90 120 180 DC 500 1 00 0 1 50 0 2 0 00 2 50 0
60
90
120 180
400
800
1200
1600
Average O n-state Curren t (A)
Fig. 3 - Current Ratings Characteristics
A v e r a ge O n - st a t e C ur re n t (A )
Fig. 4 - Current Ratings Characteristics
M ax im u m A v e ra g e O n -st a t e P o w e r Lo ss (W )
M a xim u m A v e r a ge O n - st a te P o w e r Lo ss (W )
2 5 00 18 0 12 0 9 0 6 0 3 0
3 50 0 3 00 0 2 50 0 2 00 0 1 50 0
C o nduc tio n Pe rio d
2 0 00
R M S Lim it
1 5 00
DC 180 120 90 60 30 R M S Lim it
1 0 00
C on duc tio n Ang le
1 00 0 5 00 0 0 500 10 0 0 15 0 0 2 0 00 2 5 00 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 6- On-state Power Loss Characteristics
5 00
S T3 8 0 C H ..C S e rie s T J = 1 5 0 C 0 40 0 8 00 1200 1 60 0
S T 3 8 0 C H ..C S e rie s T J = 1 5 0 C
0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 5- On-state Power Loss Characteristics
Peak Half Sine W ave On -state Current (A)
11000 10000 9000 8000 7000 6000 5000 1
At Any Rated Load Condition An d W ith Rated VRR M Applied Following Surge. In itial TJ = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e ak H a lf S in e W a v e O n -st a t e C u rr e n t (A )
12000
13000 12000
M a x im u m N o n R e p e t it iv e Su r g e C ur re n t V e rsu s P u lse T ra in D u ra tio n . C o n tr o l O f C o n d u c t io n M a y N o t Be M a in ta in e d . In itia l T J = 1 5 0 C 11000 N o V o lt a g e R e a p p lie d Ra t e d V R RM R e a p p lie d 10000 9000 8000 7000 6000 ST 3 8 0 C H ..C S e rie s 0.1 P u lse Tr a in D u ra t io n (s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
ST380CH..C Series
10
100
5000 0.01
1
Num be r O f Eq ual A m plitu de Half C yc le C urrent Pulses (N )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
10000 Instantan eous On -state Curren t (A) TJ = 25C TJ = 150C
1000
ST380CH ..C Series
100 0.5
1
1.5
2
2.5
3
3.5
In stantaneous O n-state V olta ge (V)
Fig. 9 - On-state Voltage Drop Characteristics
Tr a nsie n t T h e rm al Im p e da n c e Z thJ-hs ( K/ W ) 0 .1 S T3 8 0 C H ..C Se rie s
0 .0 1
S te a dy St a t e V a lu e R t hJ- hs = 0 .0 9 K / W ( S in g le S id e C o o le d ) R t hJ- hs = 0 .0 4 K / W ( D o ub le S id e C o o le d ) ( D C O pe ra tio n )
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1 Sq u a re W a v e P ulse D u ra t io n (s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 00 In st a nt an e o u s G a t e V o lt a g e (V ) R e c t a n g u la r g a t e pu lse a ) R e c o m m e n de d lo a d lin e fo r ra te d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) R e c o m m e n de d lo a d lin e fo r 10
<=3 0% rate d di/d t : 10 V, 1 0o hm s
(1) (2) (3) (4) (a ) (b )
Tj=-4 0 C
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
t r<= 1 s
Tj=25 C
Tj=15 0 C
1
(1)
(2)
(3) (4)
V GD IG D 0 .1 0 .0 0 1 0 .0 1
D e v ic e : ST 3 8 0 C H ..C Se rie s 0 .1 1
F re q u e n c y L im it e d by P G ( A V ) 10 1 00
In st a n t an e o u s G at e C ur re n t ( A )
Fig. 11 - Gate Characteristics
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