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S amHop Microelectronics C orp.
S T U/D1955NL
Arp,12 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
55V
F E AT UR E S
( m W ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON).
55 @ V G S = 10V 80 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
(TA=25 C unles s otherwis e noted)
S ymbol Vspike (d) VDS VGS Limit 60 55 20 10 8 23 15 50 35 -55 to 175 W C Unit V V V A A A A
25 C 70 C
ID IDM IS PD TJ, TS TG
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
S T U/D1955NL
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS = 0V, ID = 250uA VDS = 44V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 8A VGS =4.5V, ID= 4A VDS = 5V, VGS = 10V VDS = 10V, ID = 8A
Min Typ C Max Unit
55 1 V uA 100 nA 1.0 1.9 42 65 15 10 635 75 50 2.6 10.6 5.3 14.5 9.8 12.8 7.1 2.6 3.8 13 6 17 11 14 8 3 5 718 87 57 3.0 55 80 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =30V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 30V ID = 8 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =8A,VGS =10V VDS =15V, ID =8A,VGS =5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 8A VGS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T U/D1955NL
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 15A
Min Typ Max Unit
1 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max
20
V G S =10V V G S =6V V G S =8V
20
V G S =5V
16
ID, Drain C urrent(A)
ID, Drain C urrent (A)
15 T j=125 C 10 25 C 5 -55 C
12
V G S =4.5V
8 4
V G S =4V
V G S =3V 0 0 0.5 1 1.5 2 2.5 3
0
0
0.9
1.8
2.7
3.6
4.5
5.4
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1200 1.8
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
1000
1.6 1.4 1.2 1.0 0.8 0.6 -55
V G S =10V ID=8A
C , C apacitance (pF )
800 C is s 600 400 200 0 C rs s 0 5 10 15 20 25 C os s 30
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D1955NL
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
18 V DS =10V
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
gFS , T rans conductance (S )
Is , S ource-drain current (A)
15 12 9 6 3 0 0 5 10 15 20
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
ID, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
40
V G S , G ate to S ource V oltage (V )
8 6 4 2 0 0
VDS =30V ID=8A
10
RD
S
(
) ON
L im
it
10
10
1s
DC
ms
0m
s
11
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 50 60
3
6
9
12
15
18
21 24
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge 4
F igure 10. Maximum S afe O perating Area
S T U/D1955NL
V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
6
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
10
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1 P DM t1
on
0.1
0.05 0.02 0.01 1. 2. 3. 4.
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T U/D1955NL
6
S T U/D1955NL
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF.
0.090 82 56 6 0.024
BSC 398 0.064 33 REF.
7
S T U/D1955NL
T O-251 T ube
TO251 Tube/TO-252 Tape and R eel data
" A"
T O-252 C arrier T ape
UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1
r1.5 + 0.1 -0
E 16.0 0.3O
E1 1.75 0.1O
E2 7.5 O0.15
P0 8.0 O0.1
P1 4.0 O0.1
P2 2.0 O0.15
T 0.3 O0.05
T O-252 R eel
S
UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W
17.0 + 1.5 -0
T 2.2
H
r13.0 + 0.5 - 0.2
K 10.6
S 2.0 O0.5
G
R
V
8

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