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(R)
STGE50NB60HD
N-CHANNEL 50A - 600V ISOTOP PowerMESHTM IGBT
PRELIMINARY DATA
T YPE STGE50NB60HD
s
V CES 600 V
V CE(sat) < 2.8 V
IC 50 A
s s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE ISOTOP
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature
o o
Value 600 20 100 50 400 300 2.4 -65 to 150 150
Unit V V A A A W W /o C
o o
C C
(*) Pulse width limited by safe operating area
June 1999
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STGE50NB60HD
THERMAL DATA
R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.416 30 0.1
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 100 1000 100 Typ. Max. Unit V A A nA
V CE = Max Rating V CE = Max Rating V GE = 20 V
ON ()
Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 A IC = 50 A IC = 50 A Min. 3 2.3 1.9 Typ. Max. 5 2.8 Unit V V V
Tj = 125 oC
DYNAMIC
Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 50 A f = 1 MHz V GE = 0 Min. Typ. 22 4500 450 90 260 28 15 200 Max. Unit S pF pF pF nC nC nC A
V CE = 480 V
IC = 50 A
VGE = 15 V
V clamp = 480 V T j = 150 o C
R G =10
SWITCHING ON
Symbol t d(on) tr (di/dt) on Eo n (r) Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C I C = 50 A R G = 10 I C = 50 A V GE = 15 V Min. Typ. 20 70 350 950 Max. Unit ns ns A/s J
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STGE50NB60HD
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbol tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) Parameter Test Conditions I C = 50 A V GE = 15 V Min. Typ. 166 48 326 90 2.1 3 270 75 340 200 2.9 3.85 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ
Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss
I C = 50 A V GE = 15 V
COLLECTOR-EMITTER DIODE
Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 50 A If = 50 A If = 50 A dI/dt = 100 A/S T j = 125 oC V R = 200 V o T j = 125 C 2 200 T est Conditions Min. T yp. Max. 50 400 Unit A A V V nS nC A
(*) Pulse width limited by max. junction temperature (r) Include recovery losses on the STTA2006 freewheeling diode () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
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STGE50NB60HD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
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STGE50NB60HD
ISOTOP MECHANICAL DATA
DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248
G B
A
O
N D E F
J C K L M
H
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STGE50NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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