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| STGF10NB60SD N-channel 10A - 600V - TO-220FP PowerMESHTM IGBT General features Type STGF10NB60SD VCES 600V IC VCE(sat) (Max)@ 25C @100C <1.8V 7A Hight input impedance (voltage driven) Low on-voltage drop High current capability Co-packaged with turboswitchTM antiparallel diode 3 1 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). Internal schematic diagram Applications Light dimmer Static relays Motor control Order codes Part number STGF10NB60SD Marking GF10NB60SD Package TO-220FP Packaging Tube May 2006 Rev 2 1/13 www.st.com 13 Contents STGF10NB60SD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGF10NB60SD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC IC ICM (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Insulation withstand voltage A.C.(t = 1sec;Tc=25C) Operating junction temperature - 55 to 150 Storage temperature C Value 600 20 7 100 20 25 2500 Unit V A A A V W V VGE PTOT VISO Tstg Tj 1. Pulse width limited by max. junction temperature. Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Value 5 62.5 Unit C/W C/W 3/13 Electrical characteristics STGF10NB60SD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VBR(CES) Static Parameter Test condictions Min. 600 20 1.15 1.35 1.25 2.5 Typ. Max. Unit V V V V V V A A nA S Collector-emitter breakdown IC = 250A, VGE = 0 voltage Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VCE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE =15V, IC = 5A, Tj= 25C VGE =15V, IC = 10A, Tj= 25C VGE =15V, IC = 10A, Tj= 125C VCE = VGE, IC = 250A VCE = Max rating ,Tj =25 C VCE = Max rating ,Tj =125 C VGE = 20V , VCE = 0 VCE = 25 V , IC =10 A VCE(SAT) VGE(th) ICES IGES gfs 1.8 5 10 100 100 5 Table 4. Symbol Cies Coes Cres Qg ICL Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-off SOA minimum current Test condictions Min. Typ. 610 65 12 33 20 Max. Unit pF pF pF VCE = 25V, f = 1 MHz, VGE= 0 VCE = 400V, IC = 10 A, VGE = 15V , Vclamp= 480V, RG= 1k Tj= 125C nC A 4/13 STGF10NB60SD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on Eon (1) tr(Voff) td(off) tf Eoff (2) tr(Voff) td(off) tf Eoff (2) Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Test condictions VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 V Tj= 25C (see Figure 15) Min. Typ. 0.7 0.46 8 0.6 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s A/s mJ s s s mJ s s s mJ VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 TJ=25C (see Figure 15) VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 Tj=125 C (see Figure 15) 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current Table 6. Symbol If Ifm Vf trr Qrr Irrm Collector-emitter diode Parameter Forward current Forward current pulsed Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current If = 3.5 A If = 3.5 A, Tj = 125 C If = 7 A ,VR = 20 V, Tj =125C, di/dt =100A/s (see Figure 18) 1.4 1.15 50 70 2.7 Test condictions Min Typ. Max 7 56 1.9 Unit A A V V ns nC A 5/13 Electrical characteristics STGF10NB60SD 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/13 STGF10NB60SD Figure 7. Normalized breakdown voltage vs temperature Figure 8. Electrical characteristics Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA STGF10NB60SD 8/13 STGF10NB60SD Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Test circuit for inductive load switching Figure 17. Switching waveforms Figure 18. Diode recovery times waveform 9/13 Package mechanical data STGF10NB60SD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGF10NB60SD Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 11/13 Revision history STGF10NB60SD 5 Revision history Table 7. Date 15-May-2006 Revision history Revision 2 New template Changes 12/13 STGF10NB60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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