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| STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESHTM IGBT General features Type VCES VCE(sat) (Max)@ 25C <2.5V IC @100C 40A STGW30NC60VD 600V High current capability High frequency operation up to 50KHz Very soft ultra fast recovery antiparallel diode New generation products with tighter parameter distribution TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency. Internal schematic diagram Applications High frequency inverters, UPS Motor drivers SMPS and PFC in both hard switch and resonant topologies Order code Part number STGW30NC60VD Marking GW30NC60VD Package TO-247 Packaging Tube February 2007 Rev 2 1/13 www.st.com 13 Contents STGW30NC60VD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGW30NC60VD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC (1) ICM (2) ICL VGE IF PTOT Tj Tstg Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Turn-off soa minimum current Gate-emitter voltage Diode RMS forward current at Tc=25C Total dissipation at TC = 25C Operating junction temperature - 55 to 150 Storage temperature C Value 600 80 40 100 100 20 30 250 Unit V A A A A V A W 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Rthj-case Thermal resistance Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Min. Typ. Max. 0.48 1.5 62.5 Unit C/W C/W C/W Rthj-amb Thermal resistance junction-ambient 3/13 Electrical characteristics STGW30NC60VD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static Parameter Test conditions Min. 600 1.8 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE=15V, IC=20A,Tj=25C VGE=15V, IC=20A,Tj=125C VCE= VGE, IC= 250A VCE = Max rating,Tc=25C VCE= Max rating, Tc=125C VGE = 20V, VCE = 0 VCE = 15V, IC= 20A 5.75 250 1 100 15 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2200 225 50 100 16 45 140 Max Unit pF pF pF nC nC nC VCE = 25V, f = 1 MHz, VGE= 0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 17) 4/13 STGW30NC60VD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC=390 V, IC= 20A, RG=3.3, VGE=15V Tj=25C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3, VGE=15V Tj=125C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3, VGE=15V Tj=25C (see Figure 16) VCC=390 V, IC= 20A, RG=3.3, VGE=15V Tj=125C (see Figure 16) Min. Typ. 31 11 1600 31 11.5 1500 28 100 75 66 150 130 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon (1) Eoff Ets Eon (1) Eoff Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC=390 V, IC= 20A, RG=3.3, VGE=15V, Tj= 25C (see Figure 18) VCC=390 V, IC= 20A, RG=3.3, VGE=15V, Tj= 125C (see Figure 18) Min Typ. 220 330 550 450 770 1220 Max 300 450 750 Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) Table 7. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 10A If = 10A, Tj = 125C If = 20A, VR = 40V, Tj = 25C, di/dt =100A/s (see Figure 19) If = 20A, VR = 40V, Tj = 125C, di/dt =100A/s (see Figure 19) Min Typ. 1.3 1 44 66 3 88 237 5.4 Max 2.0 Unit V V ns nC A ns nC A 5/13 Electrical characteristics STGW30NC60VD 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/13 STGW30NC60VD Figure 7. Normalized breakdown voltage vs temperature Figure 8. Electrical characteristics Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA STGW30NC60VD Figure 15. Emitter-collector diode characteristics 8/13 STGW30NC60VD Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveforms Figure 19. Diode recovery times waveform 9/13 Package mechanical data STGW30NC60VD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30NC60VD Package mechanical data TO-247 MECHANICAL DATA DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Diam mm. TYP inch TYP. MIN. 4.90 2.35 0.6 1.2 MAX. 5.16 2.45 0.76 1.33 MIN. 0.193 0.093 0.024 0.047 MAX. 0.203 0.096 0.030 0.052 3 2 1.9 3.04 10.90 15.77 20.83 3.93 18.72 20.04 40.88 6.04 2 5 60 3.56 3.66 0.140 16.03 21.09 4.45 19.18 20.31 41.40 6.30 3 0.621 0.820 0.155 0.737 0.789 1.609 0.238 2.13 3.2 0.075 0.120 0.118 0.078 0.084 0.126 0.429 0.631 0.830 0.175 0.755 0.800 1.630 0.248 0.118 0.078 5 60 0.144 11/13 Revision history STGW30NC60VD 5 Revision history Table 8. Date 12-Feb-2007 19-Feb-2007 Revision history Revision 1 2 First release Figure 5. has been updated Changes 12/13 STGW30NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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