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SemiWell Semiconductor Bi-Directional Triode Thyristor STN1A60/80 Symbol Features Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) High Commutation dv/dt 3.T2 2.Gate 1.T1 General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. TO-92 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG Parameter ( TJ = 25C unless otherwise specified ) Condition Ratings 600 TC = 58 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 0.2 800 Units V A A A2s W W A V C C g Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Apr, 2003. Rev. 3 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 STN1A60/80 Electrical Characteristics Symbol Items Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 1.5 A, Inst. Measurement Ratings Min. Typ. Max. Unit IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigger Gate Voltage Critical Rate of Rise OffState Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance - - 0.5 mA - 7 - 1.6 5 5 V VD = 6 V, RL=10 VD = 6 V, RL=10 TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 0.2 1.8 2.0 5 12 1.8 1.8 mA V V 2.0 - - V/ mA C/W C/W Junction to case Junction to Ambient - 4.0 - 50 120 2/6 STN1A60/80 Fig 1. Gate Characteristics 10 1 Fig 2. On-State Voltage 10 1 VGM (6V) 25 10 0 PG(AV) (0.1W) IGM (0.5A) 25 I I I + GT1 _ GT1 _ GT3 I + GT3 On-State Current [A] Gate Voltage [V] PGM (1W) TJ = 125 C 10 0 o TJ = 25 C o VGD(0.2V) 10 -1 10 0 10 1 10 2 10 3 10 -1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 1.5 Fig 4. On State Current vs. Allowable Case Temperature = 180o = 150 o = 120 o = 90 = 60 = 30 o o o Allowable Case Temperature [ oC] 130 120 110 100 90 80 70 60 50 40 0.0 Power Dissipation [W] 1.2 360 2 0.9 : Conduction Angle 0.6 360 2 0.3 : Conduction Angle = 30 o = 60 o = 90 o = 120o = 150 o = 180 o 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 12 10 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] V + GT1 _ GT1 + GT3 _ GT3 8 60Hz VGT (25 C) VGT (t C) o o V V 1 V 6 4 50Hz 2 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 STN1A60/80 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1000 Fig 8. Transient Thermal Impedance Transient Thermal Impedance [ C/W] R (J-A) 100 I IGT (25 C) IGT (t oC) I 1 I + GT1 _ GT1 _ GT3 o o R (J-C) 10 I + GT3 0.1 -50 0 50 100 o 150 1 -2 10 10 -1 10 0 10 1 10 2 10 3 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10 10 10 10 6V A 6V A 6V A RG 6V A V RG V RG V V RG Test Procedure Test Procedure Test Procedure Test Procedure 4/6 STN1A60/80 TO-92 Package Dimension mm Dim. Min. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max. A E B F C G 1 D 2 3 1. T1 2. Gate 3. T2 J H I 5/6 STN1A60/80 TO-92 Package Dimension, Forming Dim. A B C D E F G H I J K L M N mm Min. Typ. 4.2 3.7 4.43 14.07 4.43 2.54 2.54 0.33 4.5 7.8 1.8 1.3 0.48 5.5 8.2 2.2 1.7 0.013 0.177 0.295 0.070 0.051 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 0.216 0.323 0.086 0.067 Max. A E B F C N M G D 1 2 3 L 1. T1 2. Gate 3. T2 K H I J 6/6 |
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