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| SUM110N08-07 New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 D TrenchFETr Power MOSFET D New Low Thermal Resistance Package rDS(on) (W) ID (A) 110 APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS - Motor Drives D High Current D DC/DC Converters 0.007 @ VGS = 10 V D TO-263 G G DS S N-Channel MOSFET Top View SUM110N08-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 75 "20 110 63 350 75 280 200b 3.7 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71829 S-21863--Rev. C, 21-Oct-02 www.vishay.com PCB Mountc Symbol RthJA RthJC Limit 40 0.75 Unit _C/W _ 1 SUM110N08-07 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0055 0.007 0.013 0.017 S W 75 V 2.5 4.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 35 V, RL = 0.4 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W VDS = 35 V, VGS = 10 V, ID = 110 A VGS = 0 V, VDS = 25 V, f = 1 MHz 5250 700 310 90 24 27 20 100 45 75 30 150 70 115 ns 165 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 85 A, di/dt = 100 A/ms m IF = 110 A, VGS = 0 V 1.0 75 3.5 0.13 110 350 1.5 120 7 0.30 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71829 S-21863--Rev. C, 21-Oct-02 SUM110N08-07 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 150 120 100 5V 50 80 TC = 125_C 40 25_C -55 _C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C 25_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 0.008 0.010 On-Resistance vs. Drain Current VGS = 10 V 0.006 120 125_C 80 0.004 40 0.002 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 8000 7000 V GS - Gate-to-Source Voltage (V) 6000 5000 4000 3000 2000 1000 0 0 15 30 45 60 75 Ciss 16 20 Gate Charge VDS = 35 V ID = 85 A C - Capacitance (pF) 12 8 Crss Coss 4 0 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Document Number: 71829 S-21863--Rev. C, 21-Oct-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N08-07 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 100 Drain Source Breakdown vs. Junction Temperature 94 100 V (BR)DSS (V) I Dav (a) 88 ID = 250 mA 10 IAV (A) @ TA = 25_C 82 1 76 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 70 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71829 S-21863--Rev. C, 21-Oct-02 SUM110N08-07 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 Vishay Siliconix Safe Operating Area 100 100 I D - Drain Current (A) 80 I D - Drain Current (A) Limited by rDS(on) 100, 10 ms 1 ms 60 10 10 ms 100 ms dc 40 1 20 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 71829 S-21863--Rev. C, 21-Oct-02 www.vishay.com 5 |
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