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Features * * * * * * * * Single 3-V Supply Voltage High Power-added Efficient Power Amplifier (Pout Typically 23 dBm) Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode Few External Components Packages: - PSSO20 - QFN20 with Extended Performance BluetoothTM/ISM 2.4-GHz FrontEnd IC T7024 Electrostatic sensitive device. Observe precautions for handling. Description The T7024 is a monolithic SiGe transmit/receive front-end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like BluetoothTM and WDCT. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for VS is not required. Figure 1. Block Diagram RX_ON PU VS_LNA TX TX/RX/ standby Control SWITCH_OUT RX R_SWITCH LNA_IN LNA LNA_OUT RAMP V1_PA V2_PA PA_IN PA V3_PA_OUT 4533D-BLURF-01/04 Pin Configuration Figure 2. Pinning PSSO20 R_SWITCH 1 20 PU Figure 3. Pinning QFN20 GND 3 LNA_IN 4 VS_LNA 5 GND 6 V3_PA_OUT 7 T7024 18 LNA_OUT 17 GND 16 PA_IN 15 V1_PA 14 GND 13 V2_PA 12 V2_PA 11 RAMP 10 GND VS_LNA GND LNA_IN GND 9 8 7 6 5 4 SWITCH_OUT 2 19 RX_ON V3_PA_OUT V3_PA_OUT V3_PA_OUT GND RAMP 11 12 13 14 15 16 17 18 19 20 T7024 3 2 1 SWITCH_OUT R_SWITCH PU RX_ON LNA_OUT V3_PA_OUT 8 V3_PA_OUT 9 GND 10 Pin Description Pins PSSO20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Slug Pins QFN20 4 5 6 7 9 8 11 12 13 10 15 16 17 14 19 20 18 1 2 3 Slug Symbol R_SWITCH SWITCH_OUT GND LNA_IN VS_LNA GND V3_PA_OUT V3_PA_OUT V3_PA_OUT GND RAMP V2_PA V2_PA GND V1_PA PA_IN GND LNA_OUT RX_ON PU GND Function Resistor to GND sets the PIN diode current Switched current output for PIN diode Ground Low-noise amplifier input Supply voltage input for low-noise amplifier Ground Inductor to power supply and matching network for power amplifier output Inductor to power supply and matching network for power amplifier output Inductor to power supply and matching network for power amplifier output Ground Power ramping control input Inductor to power supply for power amplifier Inductor to power supply for power amplifier Ground Supply voltage for power amplifier Power amplifier input Ground Low-noise amplifier output RX active high Power-up active high Ground 2 T7024 4533D-BLURF-01/04 V2_PA V2_PA GND V1_PA PA_IN T7024 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Pins VS_LNA, V1_PA, V2_PA, V3_PA_OUT Junction temperature Storage temperature RF input power LNA RF input power PA Symbol VS Tj Tstg PinLNA PinPA Value 6 150 -40 to +125 5 10 Unit V C C dBm dBm Thermal Resistance Parameters Junction ambient PSSOP20, slug soldered on PCB Junction ambient QFN20, slug soldered on PCB Symbol RthJA RthJA Value 19 27 Unit K/W K/W Handling Do not operate this part near strong electrostatic fields. This IC meets class 1 ESD test requirement (HBM in accordance to EIA/JESD22-A114-A (October 97) and class A ESD test requirement (MM) in accordance to EIA/JESD22-A115A. Operating Range All voltages are referred to ground (pins GND and slug). Power supply points are VS_LNA, V1_PA, V2_PA, V3_PA_OUT. The table represents the sum of all supply currents depending on the TX/RX mode. Parameters Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT Supply voltage Supply current TX Supply current RX Standby current Ambient temperature PU = 0 Pin VS_LNA PSSO20 QFN20 Symbol VS VS IS IS IS IS_standby Tamb -25 Min. 2.7 2.7 Typ. 3.0 3.0 190 165 8 10 +25 +85 Max. 4.6 5.5 Unit V V mA mA mA A C 3 4533D-BLURF-01/04 Electrical Characteristics Test conditions (unless otherwise specified): VS = 3.0 V, Tamb = 25C Parameters Power Amplifier Supply voltage Supply current Standby current Frequency range Gain-control range Power gain maximum Power gain minimum Ramping voltage maximum Ramping voltage minimum Ramping current maximum Power-added efficiency Saturated output power Input matching(2) Output matching(2) Harmonics at Psat = 23 dBm (1) Test Conditions Pins V1_PA, V2_PA, V3_PA_OUT TX TX Standby TX TX TX, Pin PA_IN to V3_PA_OUT TX, Pin PA_IN to V3_PA_OUT TX, power gain (maximum) Pin RAMP TX, power gain (minimum) Pin RAMP TX, VRAMP = 1.75 V, Pin RAMP TX TX PSSO20 QFN20 PSSO20 QFN20 Symbol Min. Typ. Max. Unit VS IS_TX IS_TX IS_RX IS_standby f Gp Gp Gp VRAMP max VRAMP min IRAMP max PAE PAE Psat Load VSWR Load VSWR 2 fo 3 fo IS_O_standby IS_O_RX IS_O_100 IS_O_1k2 IS_O_33k IS_O_R VS IS 2.7 3.0 190 165 4.6 V mA mA RX (PA off), VRAMP 0.1 V 10 10 2.4 60 28 -40 1.7 1.75 0.1 0.5 30 35 22 35 40 23 <1.5:1 <1.5:1 -30 -30 1 1 1.7 7 17 19 2.7 3.0 8 5.5 9 24 42 30 33 -17 1.83 2.5 A A GHz dB dB dB V V mA % % dBm TX, input power = 0 dBm referred to Pins V3_PA_OUT TX, Pin PA_IN TX, Pins V3_PA_OUT TX, Pins V3_PA_OUT TX, Pins V3_PA_OUT Standby, Pin SWITCH_OUT RX TX at 100 TX at 1.2 k TX at 33 k TX at dBc dBc A A mA mA mA mA V mA T/R Switch Driver (Current Programming by External Resistor from R_SWITCH to GND) Switch-out current output Low-noise Amplifier Supply voltage Supply current Notes: (3) All, Pin VS_LNA RX 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: load VSWR = 10:1 (all phases) 10 s, ZG = 50 . 2. With external matching network, load impedance 50 . 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 5. LNA gain can be adjusted with RX_ON voltage according to Figure 19 on page 11. Please note, that for RX_ON below 1.4 V the T/R switch driver switches to TX mode. 4 T7024 4533D-BLURF-01/04 T7024 Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 3.0 V, Tamb = 25C Parameters Supply current (LNA and control logic) Standby current Frequency range Power gain (5) Test Conditions TX (control logic active) Pin VS_LNA Standby, Pin VS_LNA RX RX, Pin LNA_IN to LNA_OUT RX, RX RX RX, Pin LNA_IN RX Pin LNA_OUT (5) Symbol Min. Typ. Max. Unit IS IS_standby f Gp NF NF O1dB IIP3 VSWRin VSWRout ViH ViL IiH IiL 2.4 0 40 -9 -16 2.4 15 16 2.5 2.1 -7 -14 1 0.5 10 2.5 19 2.8 2.3 -6 -13 2:1 2:1 VS, LNA 0.5 60 0.2 mA A GHz dB dB dB dBm dBm Noise figure Gain compression 3 -order input interception point Input matching (4) rd PSSO20 QFN20 RX, referred to Pin LNA_OUT Output matching(4) Logic Input Levels (RX_ON, PU) High input level Low input level High input current Low input current Notes: = `1' Pins RX_ON and PU = `0' = `1' ViH = 2.4 V = `0' V V A A 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: load VSWR = 10:1 (all phases) 10 s, ZG = 50 . 2. With external matching network, load impedance 50 . 3. Low-noise amplifier shall be unconditionally stable. 4. With external matching components. 5. LNA gain can be adjusted with RX_ON voltage according to Figure 19 on page 11. Please note, that for RX_ON below 1.4 V the T/R switch driver switches to TX mode. Control Logic for LNA and T/R Switch Driver Operation Mode Standby TX RX PU 0 1 1 RX_ON 0 0 1 5 4533D-BLURF-01/04 Typical Operating Characteristics Figure 4. LNA (PSSO20): Gain and Noise Figure versus Frequency 20 8 7 Gain 15 6 5 NF Gain (dB) 10 4 3 5 2 1 0 2000 2200 2400 2600 2800 0 3000 Frequency (MHz) Figure 5. LNA (N20): Gain and Noise Figure versus Frequency 25 5 20 Gain 4 Gain (dB) NF 10 2 5 1 0 2000 2200 2400 2600 2800 0 3000 Frequency (MHz) Figure 6. LNA: NF and Gain versus Temperature 2.5 2.0 NF 1.5 VS = 3 V Relative gain, relative NF (dB) 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -40 Gain -20 0 20 40 60 80 Temperature (C) 6 T7024 4533D-BLURF-01/04 NF (dB) 15 3 NF (dB) T7024 Figure 7. LNA: Typical Switch-out Current versus Rswitch 20 16 IS_O(mA) 12 8 4 0 1 10 100 1000 10000 100000 1000000 10000000 Rswitch() Figure 8. PA (PSSO20): Output Power and PAE versus Supply 50 I_S_TX 250 Pout (dBm), PAE (%) 40 PAE 220 30 190 20 Pout f = 2.4 GHz Vramp = 1.75 V PinPA = 0 dBm 160 10 130 0 2.7 3.1 3.5 3.9 4.3 100 4.7 Supply Voltage (V) Figure 9. PA (PSSO20): Output Power and PAE versus Ramp Voltage 50 PAE 250 Pout (dBm), PAE (%) 30 Pout 200 10 150 -10 I_S_TX f = 2.4 GHz VS = 3 V PinPA = 0 dBm 100 -30 50 -50 1.2 1.4 1.6 1.8 2.0 0 Vramp (V) IS_TX (mA) IS_TX (mA) 7 4533D-BLURF-01/04 Figure 10. PA (PSSO20): Output Power and PAE versus Input Power 40 250 PAE Gain Pout (dBm), PAE (%), Gp (dB) 30 200 20 I_S_TX 150 10 VS = 3 V f = 2.4 GHz Vramp = 1.75 V PinPA = 0 dBm Pout 100 0 50 -10 -40 0 -30 -20 -10 0 10 Input Power (dBm) Figure 11. PA (PSSO20): Output Power and PAE versus Frequency 50 I_S_TX 250 Pout (dBm), PAE (%) 40 200 30 PAE 150 20 Pout VS = 3 V Vramp = 1.7 V PinPA = 0 dBm 100 10 50 0 2400 2420 2440 2460 2480 0 2500 Frequency (MHz) Figure 12. PA (QFN20): Output Power and PAE versus Supply Voltage 50 250 Pout (dBm), PAE (%) 40 PAE I_S_TX 220 30 190 20 f = 2.4 GHz Vramp = 1.8 V PinPA = 0 dBm Pout 160 10 130 0 2.7 3.1 3.5 3.9 4.3 100 4.7 Supply Voltage (V) 8 T7024 4533D-BLURF-01/04 IS_TX (mA) IS_TX (mA) IS_TX (mA) T7024 Figure 13. PA (QFN20) Output Power and PAE versus Ramp Voltage 50 PAE 250 Pout (dBm), PAE (%) 30 Pout 200 10 150 -10 I_S_TX f = 2.4 GHz VS = 3 V PinPA = 0 dBm 100 -30 50 -50 1.2 1.4 1.6 1.8 2.0 0 Vramp (V) Figure 14. PA (QFN20): Output Power and PAE versus Input Power Pout (dBm), PAE (%), Gp (dB) 50 300 40 Gain PAE 250 20 I_S_TX 150 10 VS = 3 V f = 2.4 GHz Vramp = 1.8 V PinPA = 0 dBm Pout 100 0 50 -10 -40 0 -30 -20 -10 0 10 Input Power (dBm) Figure 15. PA (QFN20): Output Power and PAE versus Frequency 50 PAE 250 Pout (dBm), PAE (%) 40 200 20 Pout VS = 3 V Vramp = 1.8 V PinPA = 0 dBm 100 10 50 0 2400 2420 2440 2460 2480 0 2500 Frequency (MHz) IS_TX (mA) 30 I_S_TX 150 IS_TX (mA) 30 200 IS_TX (mA) 9 4533D-BLURF-01/04 Figure 16. LNA: Supply Current versus Temperature 8.0 Supply current (mA) 7.8 7.6 7.4 7.2 7.0 6.8 6.6 6.4 6.2 6.0 -40 -20 0 20 40 60 80 Temperature (C) Figure 17. PA (PSSO20): Supply Current versus Iramp and Temperature 200 Supply current (mA) 180 160 -40C 140 120 100 0C 40C 80 60 40 80C 20 0 0.1 1.0 10.0 100.0 1000.0 Iramp (A) Figure 18. PA (PSSO20, QFN20): Pout versus Vramp and Temperature 30 f = 2.4 GHz VS = 3 V Pin = 0 dBm 20 5 Pout (dBm) 10 0 80 25 -15 -10 -40C -20 1.0 1.2 1.4 1.6 1.8 Vramp (V) 10 T7024 4533D-BLURF-01/04 T7024 Figure 19. (PSSO20, QFN20): LNA Gain (dB) versus RX_ON (V) 20.0 15.0 10.0 5.0 VS = 3 V Gain (dB) 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 1.0 1.5 2.0 2.5 3.0 RX_ON (V) Input/Output Circuits Figure 20. Input Circuit PA_IN/V1_PA V1_PA PA_IN GND Figure 21. Input Circuit RAMP/V1_PA V1_PA RAMP 11 4533D-BLURF-01/04 Figure 22. Input Circuit V2_PA V2_PA GND Figure 23. Input/Output Circuit V3_PA_OUT V3_PA_OUT GND Figure 24. Input Circuit SWITCH_OUT/R_SWITCH V1_PA SWITCH_OUT R_SWITCH GND 12 T7024 4533D-BLURF-01/04 T7024 Figure 25. Input Circuit LNA_IN/VS_LNA VS_LNA LNA_IN GND Figure 26. Input Circuit PU/RX_ON VS_LNA LNA_IN / PU Figure 27. Output Circuit LNA_OUT VS_LNA LNA_OUT GND 13 4533D-BLURF-01/04 Figure 28. Typical Application T7024 (PSSO20 Package) LNA OUT PA IN 5.6nH 3.9nH V1_PA 3p3 RX ON PU V2_PA 3.9p PA ramp 20 19 18 17 16 15 14 13 12 11 T7024 1 2 3 4 5 6 7 8 9 10 harm. termination 1p5 R1 1.8p 15nH PA OUT 0p8 R1 is selected with DIL-switch Pin-diode replaced by LED on application-board LNA IN V3_PA VS_LNA Switch Out Blocking capacitors depending on application 14 T7024 4533D-BLURF-01/04 T7024 Figure 29. Typical Application T7024 (QFN20 Package) LNA OUT PA IN V1_PA V2_PA 2.2p 1p 3p3 RX ON PU 1 2 3 4 5 R1 Var R1 is selected with DIL-switch 20 19 18 17 16 15 14 T7024 13 12 11 6 7 8 9 10 PA ramp harm. termination 2p2 0p8 1.8p 18nH LNA IN Pin-diode replaced by LED on application-board Switch Out VS_LNA V3_PA PA OUT blocking capacitors depending on application 15 4533D-BLURF-01/04 Ordering Information Extended Type Number T7024-TRS T7024-TRQ T7024-PGP T7024-PGQ Package PSSO20 PSSO20 QN20 QFN20 Remarks Tube Taped and reeled Taped and reeled Taped and reeled MOQ 830 pcs. 4000 pcs. 1500 pcs. 6000 pcs. Package Information 16 T7024 4533D-BLURF-01/04 T7024 17 4533D-BLURF-01/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2004. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. The Bluetooth name and the Bluetooth trademarks are owned By Bluetooth SIG, and are used by Atmel Corporation under license. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4533D-BLURF-01/04 |
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