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TG2211FT
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2211FT
RF SPDT Switch
Antenna switches for Bluetooth class 2 and 3 Switch the diversity antenna Switch the receive filter for mobile communication Switch the local signal
Features
* * * * * Fewer external parts: On-chip inverter circuit Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz = 0.55dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 24dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: TU6 package (mold size = 2.0 x 1.25 x 0.6 mm) Weight: 0.008 g (typ.)
Pin Connection and Marking (top view)
VCON 6 RFcom 5 VDD 4
Equivalent Circuit
VCON 6 RFcom 5 VDD 4
UM
1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2
Maximum Ratings (Ta = 25C)
Characteristics Supply voltage Control voltage Input power Operating temperature range Storage temperature range Symbol VDD VCON Pi Topr Tstg Rating 6 6 350 -40~85 -55~125 Unit V V mW C C
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Electrical Characteristics
Characteristics
(VDD = 2.7 V, VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25C, Zg = Zl = 50 W)
Symbol LOSS (1) Insertion loss LOSS (2) LOSS (3) between RFcom to RF1 between RFcom to RF2 Isolation between RF1 to RF2 ISL (1) ISL (2) ISL (3) ISL (4) ISL (5) ISL (6) Pi1dB (1) Input power at 1dB gain compression Pi1dB (2) Pi1dB (3) Supply current Control current Switching time IDD ICON tsw Test Circuit 1 1 1 1 1 1 1 1 1 1 1 1 3/4 3/4 1 Test Condition f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1 GHz f = 2 GHz f = 2.5 GHz When no signal When no signal f = 100 MHz, Pi = 0dBmW Min 3/4 3/4 3/4 20 20 20 20 17 14 17 17 16 3/4 3/4 3/4 Typ. 0.45 0.5 0.55 25 25 24 25 20 17 23 23 22 0.20 0.03 80 Max 0.75 0.8 0.85 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.35 0.05 200 mA mA ns dBmW Unit dB dB dB dB dB dB dB dB dB
Switch Condition (VDD = Hi)
Vcon potential Internal connection Rfcom - RF1 Rfcom - RF2
RF2 Hi RFcom RF1 ON OFF
RF2 Low RFcom RF1 OFF ON
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Pin Description
Pin No. 1 2 3 Pin Symbol RF1 GND RF2 Description RF pin. Connect to RFcom when Vcon goes High. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. GND pin. Ground in the vicinity of this pin. RF pin. Connect to RFcom when Vcon goes Low. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. Power supply pin and RF GND pin. When the device is operating, always apply the voltage of "High level " to this pin. This pin should be grounded by a capacitor (C3) as close as possible for RF performance. The value of this capacitor affects the isolation. To protect RF signal leakage, connect a 1-kW resistor (R). RF pin. Connection can be switched to RF1 or RF2 by varying the level of the voltage applied to the Vcon pin. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. Voltage control pin. The switch connections can be controlled by varying the level of the voltage to this pin. Connect a bypass capacitor (C2) to this pin.
4
VDD
5 6
RFcom VCON
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed.
Test Circuit 1 (RF Test Circuit)
RFcom C1 VCON C2 C3 R
VDD
Top view
C1 GND C1 C1: 56 pF C2: 10 pF C3: 4 pF R: 1 kW
RF1
RF2
Please fix the value of each capacity for using frequency and circuit.
Reference Value of External Parts
50~300 MHz 1 2 3 R 1000 pF 100 pF 100 pF 1 kW 300~500 MHz 100 pF 10 pF 100 pF 1 kW 0.5~2.5 GHz 56 pF 10 pF 4 pF 1 kW
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Evaluation Board
RFcom C1 C3 VCON RF1 C1 C2 VDD R C1 RF2
2211-1
Notice
The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
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LOSS - Pi (RFcom - RF1)
0.0 0.5 0.0 0.5
LOSS - Pi (RFcom - RF2)
(dB)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 VDD = 2.7 V VCON = 2.7 V RF2 = 50 W f = 2.5 GHz 10 20 30
(dB) LOSS Insertion loss
1.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 VDD = 2.7 V VCON = 0 V RF1 = 50 W f = 2.5 GHz 10 20 30
Insertion loss
LOSS
Input power Pin
(dBmW)
Input power Pin
(dBmW)
ISL - Pi (RFcom - RF1)
0 VDD = 2.7 V 5 VCON = 0 V RF2 = 50 W 5 0
ISL - Pi (RFcom - RF2)
VDD = 2.7 V VCON = 2.7 V RF1 = 50 W f = 2.5 GHz 10
ISL (dB)
10
15
ISL (dB) Isolation
30
f = 2.5 GHz
15
Isolation
20
20
25
25
30 0
10
20
30 0
10
20
30
Input power Pin
(dBmW)
Input power Pin
(dBmW)
LOSS - f (RFcom - RF1)
0 0
LOSS - f (RFcom - RF2)
(dB)
1.0
(dB) LOSS Insertion loss
VDD = 2.7 V VCON = 2.7 V RF2 = 50 W 1.0 2.0 3.0
1.0
LOSS
2.0
Insertion loss
2.0
3.0
3.0 VDD = 2.7 V VCON = 0 V RF1 = 50 W 1.0 2.0 3.0
4.0 0
4.0 0
Frequency f
(GHz)
Frequency f
(GHz)
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ISL - f (RFcom - RF1)
0 10 0 10
ISL - f (RFcom - RF2)
ISL (dB)
30 40 50 60 70 @VDD = 2.7 V VCON = 0 V RF2 = 50 W 0 1.0 2.0 3.0
ISL (dB) Isolation
20
20 30 40 50 60 70 @VDD = 2.7 V VCON = 2.7 V RF1 = 50 W 0 1.0 2.0 3.0
Isolation
Frequency f
(GHz)
Frequency f
(GHz)
ISL - f (RF1 - RF2)
0 10 0 10
ISL - f (RF1 - RF2)
ISL (dB)
30 40 50 60 70 @VDD = 2.7 V VCON = 2.7 V RFcom = 50 W 0 1 2 3
ISL (dB) Isolation
20
20 30 40 50 60 70 @VDD = 2.7 V VCON = 0 V RFcom = 50 W 0 1 2 3
Isolation
Frequency f
(GHz)
Frequency f
(GHz)
Switching Time (RF1: RAISE)
Switching Time (RF1: FALL)
VC 84 ns
VC
49 ns
RF1
RF1
Time (50 ns/div)
Time (50 ns/div)
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Switching Time (RF2: RAISE)
Switching Time (RF2: FALL)
VC
VC
63 ns 67 ns
RF2 RF2
Time (50 ns/div)
Time (50 ns/div)
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Package Dimensions
Weight: 0.008 g (typ.)
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RESTRICTIONS ON PRODUCT USE
020704EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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