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Advance Product Information
June 16, 2004
Wideband Low Noise Amplifier
* * * * * * * * * *
10 5
TGA4830-EPU
Key Features and Performance
DC - 45GHz Frequency Range 13dB Gain @ 20GHz 15dB Return Loss @ 20GHz 11.5dBm Typical P1dB 3.2dB Typical Noise Figure 40Gbps Data Rate > 20dB Gain Control 0.15m pHEMT 3MI Technology 5V, 50mA Bias Condition Chip Dimensions: 1.79 x 1.00 x 0.10 mm (0.070 x 0.039 x 0.004 inches)
Measured Performance
V+ = 5V, I+ = 50mA
16 14 12
Gain (dB)
10 8 6 4 2 0 0
S21 S11 S22
Return Loss (dB)
0 -5 -10 -15 -20 -25 -30
Primary Applications
* * * * Test Equipment Ultra Wideband EW Systems Fiberoptic Systems
Product Description
The TriQuint TGA4830-EPU is a medium power wideband low noise amplifier which operates from DC to 45 GHz. Typical small signal gain is 13dB with >20dB AGC range. Typical input and output return loss is 15dB. The TGA4830-EPU provides 11.5 dBm of typical output power at 1 dB gain compression and a 3.2dB noise figure. RF ports are DC coupled enabling the user to customize system corner frequencies. The TGA4830-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. It is also an excellent choice for 40Gb/s NRZ applications. The TGA4830 is capable of driving an Electro-Absorptive optical Modulator (EAM) with electrical Non-Return to Zero (NRZ) data. In addition, the TGA4830 may also be used as a predriver or a receive gain block.
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50
Frequency (GHz)
7 6
Noise Figure (dB)
5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
TGA4830-EPU
TABLE I MAXIMUM RATINGS Symbol V VD I ID PD+ PD VG |IG| VCTRL |ICTRL| PIN VIN TCH TM TSTG 1/ 2/ 3/ 4/ 5/ 6/
+ +
Parameter 1/ POSITIVE SUPPLY VOLTAGE Biased Thru On-Chip Termination Biased Thru RF Out POSITIVE SUPPLY CURRENT Biased Thru On-Chip Termination Biased Thru RF Out POWER DISSIPATION Biased Thru On-Chip Termination Biased Thru RF Out Gate Voltage Range Gate Current Control Voltage Range Control Current Input Continuous Wave Power 40Gbps PRBS Voltage Input Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 10 V 7V 72 mA 180m A 1.1 W 0.8 W -3V TO +1V 10 mA +5V TO (VD - VCTRL 8V) 10 mA TBD TBD 150 C 320 0C -65 to 150 0C
Notes 2/, 3/
3/
3/ 4/
5/
6/
These ratings represent the maximum operable values for this device. Assure VD - VCTRL 8V. Compute VD as follows: VD = V+ - I+ * 40 Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 0C, the median life is TBD hours. Assure VCTRL never exceeds VD during bias up and bias down sequences. Also, VCTRL must never exceed 5V during normal operation. Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
TGA4830-EPU
TABLE II THERMAL INFORMATION Parameter RJC Thermal Resistance (Channel to Backside of Carrier) Test Conditions V+ = 5V I+ = 50mA PDISS = 0.25W TBASE = 70C TCH (C) 82.3 RJC (C/W) 49.2 MTTF (hrs) 9.1E+8
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case conditions with no RF applied, 100% of DC power is dissipated.
TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (V+ = 5V, I+ = 50mA) Symbol Parameter Test Conditions Typ Units Notes
Gain
Small Signal Gain Small Signal 3dB Bandwidth Input Return Loss
F = 1 - 30 GHz
13
dB
BW
45
GHz
IRL
F = 1 - 30 GHz
12
dB
ORL
Output Return Loss Output Power @ 1dB Gain Compression Noise Figure
F = 1 - 30 GHz
15
dB
P1dB
F = 1 - 25 GHz
11.5
dBm
NF
F = 1 - 40 GHz
3.2
dB
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
Preliminary Data
V+ = 5V, I+ = 50mA
16 14 12
TGA4830-EPU
Gain (dB)
10 8 6 4 2 0 0 0 -5 S11 S22 5 10 15 20 25 30 35 40 45 50
Frequency (GHz)
Return Loss (dB)
-10 -15 -20 -25 -30 0 5 10 15 20 25 30 35 40 45 50
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
Preliminary Data
V+ = 5V, I+ = 50mA
16 14
TGA4830-EPU
Pout @ P1dB (dBm)
12 10 8 6 4 0 7 6 5 10 15 20 25 30 35 40
Frequency (GHz)
Noise Figure (dB)
5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
Preliminary Data
TGA4830-EPU
V+ = 5V, I+ = 60mA, VIN = 0.62VPP, VOUT = 2.25VPP
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
Mechanical Drawing
TGA4830-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
TGA4830-EPU Chip Assembly & Bonding Diagram
Bypassing Effective Lower Frequency 0 20 MHz 0.01uF 4 MHz 0.1uF 250kHz C
Additional Biasing Information: * Bias Conditions: V+ = 5.0 V, I+ = 50 mA * Adjust Vg1 for I+ = 50 mA * Adjust Vg2 for Gain and Eye crossing control. Vg2 bias is optional.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
TGA4830-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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